Huazhong University of Science and Technology

Qi Lin

Xiangshui Miao

Hao Tong

A selector device including a first metal electrode layer, a second metal electrode layer and a switching layer disposed between the first metal electrode layer and the second metal electrode layer. The switching layer is a stacked assembly of ABA, BAB, AB or BA, where A is an ion supply layer, and B is a conversion layer. The ion supply layer includes a chalcogenide metal material having a metal atomic content of more than 0% and not more than 50% with respect to the chalcogenide metal material. The conversion layer includes a chalcogenide material.

Selector device and method of making the same

An operating method for improving the performance of a selector device is provided, including: determining and applying a direct current (DC) or alternating current (AC) operating voltage and a limit current of the selector device, so that the selector device circulates until a off-state resistance is reduced; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is reduced to a minimum value; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased; continuously applying the operating voltage and the limit current to the selector device, so that the selector device circulates until the off-state resistance is increased to a maximum value; and adjusting the operating voltage and the limit current, and performing DC or AC operation pulsed operation on a selector.

Growing community of inventors

Hubei, China

Qi Lin