Applied Materials, Inc.

Qi Li

Keiji Horioka

Chun Yan

Bryan Y Pu

Roger Alan Lindley

Evans Yip Lee

Douglas H Burns

Taeho Shin

Panyin Hughes

Mahmoud Dahimene

A method and apparatus for controlling a magnetic field gradient within a magnetically enhanced plasma reactor. The apparatus comprises a cathode pedestal supporting a wafer within an enclosure, a plurality of electromagnets positioned proximate the enclosure for producing a magnetic field in the enclosure and a magnetic field control element, positioned proximate the electromagnets, for controlling the magnetic field proximate a specific region of the wafer.

Method and apparatus for providing uniform plasma in a magnetic field enhanced plasma reactor

A magnetic field generator for producing a magnetic field that accelerates plasma formation is placed proximate a reaction chamber of semiconductor substrate processing system. The magnetic field generator has four main magnetic coil sections for producing a magnetic field nearly parallel to the top surface of a support pedestal in the reaction chamber and four sub-magnetic coil sections placed generally coaxially with the main magnetic coil sections to produce a magnetic field of the direction opposite of that of the magnetic field produced with the main magnetic coil sections. In the magnetic field generator, magnetic fields of opposite polarities are superimposed on each other when electric currents of opposite directions are applied to the main and sub-magnetic coil sections.

Method and apparatus for controlling the magnetic field intensity in a plasma enhanced semiconductor wafer processing chamber

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San Jose, CA, United States of America

Qi Li