Hefei Core Storage Electronic Limited

Hefei Core Storage Electronics Limited

Qi-Ao Zhu

Jing Zhang

Wan-Jun Hong

Xin Wang

Chih-Ling Wang

Chong Peng

Xu Hui Cheng

Kuai Cao

Hao-Zhi Lee

Yang Zhang

Hui Xie

Dong Sheng Rao

Jian Hu

Tong-Jin Liu

Zhi Wang

Kai-Di Zhu

Tsung-Lin Wu

Meng Xiao

Yin Ping Gao

Ya-Lin Zhu

Long Fei Zhang

Ti De Zhang

A variable temperature test system and an operation method thereof are provided. The variable temperature test system includes a main control device, multiple test devices, and a variable temperature test platform. The variable temperature test platform is coupled to the main control device and the test devices. The main control device provides an adjustment parameter according to at least one pending test. The variable temperature test platform includes multiple test areas, multiple temperature sensors, and a temperature control module. The test areas are respectively coupled to the test devices. The temperature sensors are respectively disposed in the test areas. The temperature control module is coupled to the test areas. The temperature control module adjusts a temperature of at least one test area according to the adjustment parameter.

Variable temperature test system for providing different test environments and operation method thereof

A data storing method, a memory storage device, and a memory controller are provided. The method includes: obtaining a plurality of program/erase counts and a plurality of program/erase period values of a plurality of physical erasing units in a storage area; calculating a plurality of data cold and hot degrees according to the plurality of program/erase counts and the plurality of program/erase period values; selecting a first physical erasing unit according to the plurality of data cold and hot degrees, and selecting a second physical erasing unit according to the plurality of data cold and hot degrees; and writing data stored in the first physical erasing unit to the second physical erasing unit.

Data storing method, memory storage device and memory controller

A memory operation control method, a memory storage device, and a memory control circuit unit are disclosed. The method includes the following. Management data is established, which includes status recording data. First status information corresponding to a first physical unit is stored in the status recording data. An operation command is received from a host system. The management data is queried according to the operation command. Whether to allow an execution of the operation command on the first physical unit is determined according to a query result.

Memory operation control method, memory storage device and memory control circuit unit

A data arrangement method based on file system, a memory storage device and a memory control circuit unit are disclosed. The method includes: analyzing a file system stored in a system region to obtain a plurality of first logical units to which a first file belongs and first distribution information of a plurality of first physical units in a storage region, wherein the first physical units are mapped by the first logical units; determining whether to activate a data arrangement operation on the first file according to the first distribution information; after the data arrangement operation on the first file is activated, reading first data belonging to the first file from the first physical units; and writing, sequentially, the read first data to at least one second physical unit in the storage region.

Data arrangement method based on file system, memory storage device and memory control circuit unit

A power-supply control device and a power test system are disclosed. The power test system includes a memory and a processor. The processor is configured to: obtain at least one power-supply path manner of at least one power-down test device; determine at least one power-supply path interface according to the at least one power-supply path manner; determine at least one electronic switch according to the at least one power-supply path interface; determine at least one target device to be tested; obtain at least one power-down test instruction according to the at least one target device; establish a target power-supply path corresponding to the target device between the at least one power-supply path interface and the at least one electronic switch according to the power-supply path establishment parameter; and at the target power-supply path, perform a power-down operation according to the power-down execution parameter.

Power control device and power test system

A memory polling method, a memory storage device and a memory control circuit unit are provided. The memory polling method includes: detecting a plurality of busy times corresponding to a plurality of physical units when executing a plurality of first commands; counting the busy times corresponding to the physical units to generate a count statistic value, and determine a delay time based on the count statistic value; and transmitting a plurality of status requests to a rewritable non-volatile memory module after the delay time.

Memory polling method, memory storage device and memory control circuit unit

A memory management method for a memory storage device is provided. The memory management method includes: detecting effective information of at least one operation event performed by the memory storage device in a first mode; and adjusting a threshold value according to the effective information. The threshold value is configured to determine whether to instruct the memory storage device to enter the first mode.

Memory management method, memory storage device and memory control circuit unit

A memory adaptive temperature controlling method, a storage device, and a control circuit unit are provided. In this exemplary embodiment, the temperature value is obtained according to the temperature measured by the thermal sensor, and the access speed to be reached is calculated according to the temperature change rate within the specific time range and the adjustment percentage when it is determined that the speed-down or speed-up operation is required to be performed. By adjusting the access speed of the memory storage device in a stepwise manner, the temperature of the memory storage device may be stabilized, thereby striking the balance between the temperature stability and the system performance of the memory storage device.

Memory adaptive temperature controlling method, storage device and control circuit unit

A data storing allocation method, a memory storage apparatus, and a memory control circuit unit are provided. The method includes the following. A plurality of data writing speeds of a plurality of memory units are detected. An initial write volume of each memory unit is determined according to a number of dies in each memory unit. At least one compensation data volume is calculated according to the data writing speeds and the initial write volume of each memory unit. A write data corresponding to a write command is written to the memory units according to the initial write volume of each memory unit and the at least one compensation data volume.

Data storing allocation method, memory storage apparatus and memory control circuit unit

A table management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: storing multiple table groups, wherein each of the table groups includes multiple voltage management tables; detecting a status of the memory storage device; determining one of the table groups as a target table group according to the status of the memory storage device, wherein the target table group includes multiple target voltage management tables; reading data from a rewritable non-volatile memory module by using at least one read voltage level according to at least one of the target voltage management tables.

Table management method, memory storage device and memory control circuit unit

A mapping information recording method for a rewritable non-volatile memory module is provided. The rewritable non-volatile memory module includes multiple physical erasing units, and each of the physical erasing unit includes multiple physical programming units. The mapping information recording method includes: receiving first continuous data from a host system, wherein the host system instructs to store the first continuous data to a first continuous logical address; establishing a continuous mapping table to record a start logical address of the first continuous logical address, a length of the first continuous logical address, and a bitmap; writing the first continuous data into first physical programming units; and marking bits of virtual blocks corresponding to the first continuous logical address in the bitmap as a valid state, numbering the virtual blocks, and recording the numbers into the continuous mapping table.

Mapping information recording method, memory control circuit unit, and memory storage device

A memory performance optimization method, a memory control circuit unit, and a memory storage device are provided. The method includes the following. An idle time of the memory storage device is counted in an active mode. The memory storage device is instructed to enter a first low electricity consumption mode from the active mode in response to the idle time being greater than an idle threshold. A first waiting time of the memory storage device is counted in the first low electricity consumption mode. The memory storage device is instructed to enter a second low electricity consumption mode from the first low electricity consumption mode in response to the first waiting time being greater than a first waiting threshold. Electricity consumption of the second low electricity consumption mode is lower than electricity consumption of the first low electricity consumption mode.

Memory performance optimization method, memory control circuit unit and memory storage device

A multi-channel memory storage device, a memory control circuit unit, and a data reading method are provided. The method includes: determining whether a storage space of a buffer memory is insufficient when a multi-channel access is performed; issuing a data read command corresponding to each of a plurality of multi-channels to a rewritable non-volatile memory module according to a logical address in a host read command in response to insufficient storage space of the buffer memory to read data corresponding to each of the plurality of multi-channels from a data storage area to a data cache area via the plurality of multi-channels; and allocating the storage space of the buffer memory to the rewritable non-volatile memory module after the storage space of the buffer memory is released and issuing a cache read command to move first data in data temporarily stored in the data cache area to the buffer memory.

Multi-channel memory storage device, memory control circuit unit and data reading method

A memory management method. The memory management method includes: receiving a command from a host system; sending a command sequence corresponding to the command to a rewritable non-volatile memory module; determining a delay time; and sending a plurality of polling commands to the rewritable non-volatile memory module after the delay time.

A memory management method, a memory storage device and a memory control circuit unit are disclosed. The method includes: receiving a first write command from a host system; instructing a rewritable non-volatile memory module to perform a first write operation according to the first write command; obtaining first performance information corresponding to the first write operation; and updating threshold information according to the first performance information, wherein the threshold information is configured to determine a type of target data.

Growing community of inventors

Province, China

Qi-Ao Zhu