Globalfoundries Inc.

Qanit Takmeel

Somnath Ghosh

Sunil Kumar Singh

Ming He

Craig Child

Keith Donegan

Prakash Periasamy

Eswar Ramanathan

Anbu Selvam Km Mahalingam

Ashwini Chandrashekar

Colin Bombardier

Anbu Selvam K M Mahalingam

Jeric Sarad

The present disclosure relates to semiconductor structures and, more particularly, to via structures and via patterning using oblique angle deposition processes. The method includes: depositing a material on a lower wiring layer; forming one or more openings in the material; filling the one or more openings with a conductive material; growing via structures on the conductive material; forming interlevel dielectric material on the via structures; and forming an upper wiring layer on the interlevel dielectric material and in contact with the via structures.

Via structures and via patterning using oblique angle deposition processes

Embodiments of the disclosure provide a substrate structure for an integrated circuit (IC) structure, including: a first dielectric layer positioned above a semiconductor substrate; a first plurality of trenches extending at least partially into the first dielectric layer from an upper surface of the first dielectric layer; and a first metal formed within the first plurality of trenches, wherein a spatial arrangement of the first plurality of trenches causes coupling of surface plasmons in the first metal to at least one wavelength of an incident light.

Substrate structure with spatial arrangement configured for coupling of surface plasmons to incident light

Growing community of inventors

Latham, NY, United States of America

Qanit Takmeel