Samsung Electronics Co., Ltd.

Korea University Research and Business Foundation

Korea University Industrial Academic Collaboration Foundation

Korea Institute of Science and Technology

Q-Han Park

Unjeong Kim

Suyeon Lee

Hyunjun Ma

Sung Yoon Ryu

Sanghun Lee

Sujin Lee

Hojung Kim

Chang-won Lee

Chulki Kim

Yusin Yang

Younghoon Sohn

Hyun Dae Lee

Sangkil Lee

Minah Seo

Jinsoo Kim

Young-geun Roh

Yeon-sang Park

Hwan-soo Suh

Jin-eun Kim

Won-Jun Choi

Jongho Choe

Jong-ho Choe

Heon-Su Jeon

Su-Hyun Gong

DongGun Lee

Chan Gi Jeon

Seunghyeok Son

Provided are a spectral camera and an electronic apparatus including the same. The spectral camera includes an image sensor including a plurality of channels configured to detect a plurality of central wavelengths; an optical module configured to be movable with respect to the image sensor to provide an image of an object on the image sensor; a memory configured to store first information about a change in an optical characteristic of each of the plurality of channels in the image sensor, the change in the optical characteristic of each of the plurality of channels corresponding to a movement of the optical module; and a processor configured to: obtain the first information from the memory, obtain second information corresponding to the plurality of central wavelengths detected by the image sensor, and obtain third information by correcting the second information based on the first information.

Spectral camera and electronic device including the same

A semiconductor wafer inspection method is provided. The semiconductor wafer inspection method includes: providing a wafer with target and reference dies; obtaining a candidate image of a first region of the target die and a reference image of a second region of the reference die; performing an imaging process on the candidate image to obtain a high resolution candidate image including sub-pixels for each pixel of the candidate image; performing the imaging process on the reference image to obtain a high resolution reference image including sub-pixels for each pixel of the candidate image; shifting the high resolution reference image in units of the sub-pixels; obtaining a difference image based on a difference between the high resolution candidate image and the high resolution reference image; and detecting whether a defect signal generated based on the difference image exceeds a threshold value.

Method and system for inspecting semiconductor wafer and method of fabricating semiconductor device using the same

Provided are a method and a device, for processing spectrum data of an image sensor. The method includes obtaining spectrum response signals corresponding to channels of spectrum data of light, the spectrum data being obtained from an object by an image sensor; determining a set of bases corresponding to the obtained spectrum response signals; performing, based on the determined set of bases, a change of basis on at least one basis included in the determined set of bases; and generating, by using a pseudo inverse, reconstructed spectrum data from the spectrum response signals on which the change of basis has been performed.

Device and method for processing spectrum data of image sensor

Disclosed are mass flow controllers, apparatuses for manufacturing semiconductor devices, and methods of maintenance thereof. The mass flow controller may control an amount of a gas provided into a chamber. The mass flow controller may be configured to obtain an absolute volume of the gas provided into the chamber at a standard flow rate when the mass flow controller is initially used. The mass flow controller may be configured to obtain a detected flow rate of the gas provided at a measured flow rate after the mass flow controller has been used for a predetermined time. The mass flow controller may be configured to compare the detected flow rate and the standard flow rate to verify a full-scale error in the measured flow rate.

Mass flow controller, apparatus for manufacturing semiconductor device, and method for maintenance thereof

Disclosed herein is a system for non-contact measurement of an optoelectronic property. The system includes a sensing element configured to amplify an electromagnetic wave having a specific frequency, a thin film disposed on the sensing element such that an optoelectronic property of the thin film is measured, and an optoelectronic property measuring server configured to extract a physical property of the thin film based on the optoelectronic property of the thin film obtained when the electromagnetic wave amplified by the sensing element passes through the thin film.

System and method for non-contact measurement of optoelectronic properties of thin film

An optical device may include a substrate, a metal layer on the substrate, at least one first nano-structure in the layer, and at least one second nano-structure in the layer. The at least one first nano-structure may include a light source. The at least one first and second nano-structures may be spaced apart. A method of controlling a propagation direction of light output from an optical device that includes a metal layer on a substrate may include disposing first and second nano-structures in the layer; disposing at least one light source in the first nano-structure; and controlling the propagation direction of the light output from the at least one light source by changing at least one of a shape of the first nano-structure, a shape of the second nano-structure, a size of the first nano-structure, a size of the second nano-structure, and an interval between the first and second nano-structures.

Optical devices and methods of controlling propagation directions of light from the optical devices

Disclosed is a polarized light emitting diode (LED) capable of emitting polarized light in the front direction thereof by forming a first grating layer on a quantum well layer and forming a second grating layer on a substrate. The polarized LED includes a nitride thin film formed on a substrate, a quantum well layer formed on the nitride thin film, a first grating layer formed on the quantum well layer to allow a part of light generated from the quantum well layer to pass through the first grating layer and to reflect remaining light, and a second grating layer formed on the substrate to rotate the light reflected from the first grating layer such that the reflected light passes through the first grating layer.

Polarized light emitting diode

Growing community of inventors

Seoul, South Korea

Q-Han Park