Samsung Electronics Co., Ltd.

Pyoungwan Kim

Sunchul Kim

Taehun Kim

Hyunki Kim

Junwoo Park

Su-Min Park

Kyungsuk Oh

Jinkyeong Seol

Byoung Wook Jang

Chanhee Jeong

Inku Kang

Heeyeol Kim

Seung Hwan Kim

Chajea Jo

Sangsoo Kim

Sung-Kyu Park

Minseung Yoon

Keumhee Ma

Insup Shin

Namseog Kim

Yun-Young Kim

Soohwan Lee

A semiconductor package including a substrate; a semiconductor stack on the substrate; an underfill between the substrate and the semiconductor stack; an insulating layer conformally covering surfaces of the semiconductor stack and the underfill; a chimney on the semiconductor stack; and a molding member surrounding side surfaces of the chimney, wherein the semiconductor stack has a first upper surface that is a first distance from the substrate and a second upper surface that is a second distance from the substrate, the first distance being greater than the second distance, wherein the chimney includes a thermally conductive filler on the first and second upper surfaces of the semiconductor stack, the thermally conductive filler having a flat upper surface; a thermally conductive spacer on the thermally conductive filler; and a protective layer on the thermally conductive spacer, and wherein an upper surface of the thermally conductive spacer is exposed.

Semiconductor package

A semiconductor package includes a package substrate, a first semiconductor chip disposed on the package substrate, at least one second semiconductor chip disposed on a region of an upper surface of the first semiconductor chip, a heat dissipation member disposed in another region of the upper surface of the first semiconductor chip and at least a region of an upper surface of the second semiconductor chip, and having an upper surface in which at least one trench is formed, and a molding member covering the first semiconductor chip, the second semiconductor chip, an upper surface of the package substrate, and side surfaces of the heat dissipation member, and filling the at least one trench while exposing the upper surface of the heat dissipation member.

Semiconductor package having molding member and heat dissipation member

A packaged semiconductor device includes a package substrate, a first semiconductor device on the package substrate, and at least one second semiconductor device that extends on and partially covers the first semiconductor device. A heat dissipating insulation layer is provided as a coating on the first and second semiconductor devices. A conductive heat dissipation member is provided, which extends upwardly from the heat dissipating insulation layer and on portions of the first and second semiconductor devices. A protective member is provided on the package substrate, to cover the first and second semiconductor devices and the conductive heat dissipation member. This protective member includes a first covering portion, which covers an upper surface of the conductive heat dissipation member.

Packaged semiconductor devices having enhanced thermal transport and methods of manufacturing the same

A semiconductor package including a package substrate; a first semiconductor chip on the package substrate; a second semiconductor chip on an upper surface of the first semiconductor chip; an insulating layer on surfaces of the first semiconductor chip and the second semiconductor chip; a heat dissipation member on the insulating layer such that the heat dissipation member includes a region on an upper surface of the first semiconductor chip on which the second semiconductor chip is not disposed, and a region on an upper surface of the second semiconductor chip; a molding member on the package substrate and encapsulating the first semiconductor chip, the second semiconductor chip, and the heat dissipation member such that the molding member exposes at least a portion of an upper surface of the heat dissipation member; and a reinforcing member on the heat dissipation member and the molding member.

Semiconductor package including molding member, heat dissipation member, and reinforcing member

A semiconductor package includes a semiconductor chip disposed on a first substrate, a mold layer covering a sidewall of the semiconductor chip and including a through-hole, a second substrate disposed on the semiconductor chip, a connection terminal disposed between the first substrate and the second substrate and provided in the through-hole, and an underfill resin layer extending from between the semiconductor chip and the second substrate into the through-hole.

Disclosed are a semiconductor package and a method of fabricating the same. The semiconductor package comprises a lower semiconductor chip on a lower substrate, a lower molding layer covering the lower semiconductor chip on the lower substrate and including a molding cavity that extends toward the lower semiconductor chip from a top surface of the lower molding layer, an interposer substrate on the top surface of the lower molding layer and including a substrate opening that penetrates the interposer substrate and overlaps the molding cavity, and an upper package on the interposer substrate. The molding cavity has a floor surface spaced apart from the upper package across a substantially hollow space.

Semiconductor package having a molding layer including a molding cavity and method of fabricating the same

Through-Silicon-Via (TSV) structures can include a conductive via through a substrate extending from an upper surface of the substrate to a backside surface of the substrate opposite the upper surface, a conductive protective layer including Ni and/or Co can be at a bottom of the conductive via, and a separate polymer insulating layer can be on the backside surface of the substrate in contact with the conductive protective layer.

Through-silicon via structures including conductive protective layers

Growing community of inventors

Suwon-si, South Korea

Pyoungwan Kim