Skhynix Inc.

Pyong-Su Kwag

Young-Jun Kwon

Ho-Ryeong Lee

Sung-Kun Park

Yun-Hui Yang

Cha-Young Lee

Min-Ki Na

Dong-Hyun Woo

Donghyun Woo

Hye-Won Mun

Sun-Ha Hwang

Kwang-Deok Kim

Ju-Tae Ryu

Sang-Uk Park

An image sensor may include a pixel array including a plurality of pixel blocks operable to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels that share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels that share a second floating diffusion; a first driving circuit positioned between the first light receiving circuit and the second light receiving circuit; a second driving circuit positioned adjacent to the other side facing away from one side of the first light receiving circuit or the second light receiving circuit, which is adjacent to the first driving circuit; and a third driving circuit positioned adjacent to the first driving circuit or the second driving circuit.

Image sensor including a pixel array having pixel blocks arranged in a zigzag form

An image sensor may include a pixel array including a plurality of pixel blocks structured to convert light into electrical signals. Each of the plurality of pixel blocks may include a first light receiving circuit including a plurality of unit pixels which share a first floating diffusion; a second light receiving circuit arranged adjacent to the first light receiving circuit in a second direction, and including a plurality of unit pixels which share a second floating diffusion; a first driving circuit and a second driving circuit positioned between the first light receiving circuit and the second light receiving circuit, and aligned in a first direction crossing the second direction; and an intercoupling circuit configured to electrically couple the first floating diffusion, the second floating diffusion, the first driving circuit and the second driving circuit.

An image sensing device includes a floating diffusion node, a reset circuit coupled between a supply terminal of a high voltage and the floating diffusion node, and suitable for resetting the floating diffusion node with the high voltage during a reference period based on a reset control signal, a photodiode coupled between a supply terminal of a low voltage and a coupling node, and suitable for generating a photocharge based on incident light during an exposure period, a transmission block coupled between the coupling node and the floating diffusion node, and suitable for transmitting the photocharge to the floating diffusion node during a transmission period based on a transmission control signal, and a selection circuit coupled between an input terminal of a boost control signal and an output terminal of a pixel signal, and suitable for generating the pixel signal with a boost voltage greater than the high voltage during the transmission period based on a selection control signal and a voltage applied to the floating diffusion node.

Image sensing device generating pixel signal with boost voltage and operating method thereof

An image sensor includes a first pixel group and a second pixel group positioned adjacent to the first pixel group. The first pixel group includes a first light receiving circuit and first and second driving circuits formed adjacent to one end of the first light receiving circuit. The first light receiving circuit includes a plurality of unit pixels sharing a first floating diffusion. The second pixel group includes a second light receiving circuit and third and fourth driving circuits formed adjacent to one end of the second light receiving circuit. The second light receiving circuit includes a plurality of unit pixels sharing a second floating diffusion. The first driving circuit is coupled in parallel to the third driving circuit, and the second driving circuit is coupled in parallel to the fourth driving circuit.

Image sensor including a pixel block having 8-shared pixel structure

An image sensor may include unit pixel blocks with each having pixels for sensing incident light. Each unit pixel block may include a first sub pixel block including a first floating diffusion, a second sub pixel block including a second floating diffusion, and a common transistor block including a first drive transistor adjacent to the first floating diffusion and a second drive transistor adjacent to the second floating diffusion. The first and second floating diffusions may be electrically coupled in common to the first and second drive transistors.

Image sensor including unit pixel block having common selection transistor

An image sensor, comprising: a photoelectric conversion element; a transfer transistor formed over the photoelectric conversion element; and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are trench-type transistors and are symmetrical structure to each other with respect to the gap, wherein the photoelectric conversion element is a continuous layer under both the transfer transistor and the reset transistor, and is completely below the transfer transistor and the reset transistor.

Image sensor

An image sensor may include a photoelectric conversion element, a transfer transistor formed over the photoelectric conversion element, and a reset transistor formed over the photoelectric conversion element, formed substantially at the same level as the transfer transistor, and spaced apart from the transfer transistor by a gap, wherein the transfer transistor and the reset transistor are configured symmetrical to each other with respect to the gap.

A MOS capacitor may include: an isolation layer formed in a substrate and defining an active region; a first electrode formed in the active region, and including an impurity region spaced from the isolation layer; and a second electrode formed over the substrate overlapping the impurity region, and including a gate having a plurality of gate patterns adjacent to each other with a gap therebetween.

MOS capacitor and image sensor having the same

An image sensor includes a pixel array including a plurality of pixel blocks, each including a light receiving section including unit pixels which share a floating diffusion; a first driving section disposed at one side of the light receiving section and including a reset transistor; and a second driving section disposed adjacent to the first driving section and including a driver transistor, wherein the pixel blocks include a first pixel block and a second pixel block which is adjacent to the first pixel block, and, with respect to a boundary where the first pixel block and the second pixel adjoin each other, the first driving section of the first pixel block has a shape symmetrical to the first driving section of the second pixel block and the second driving section of the first pixel block has a shape asymmetrical to the second driving section of the second pixel block.

Image sensor having shared pixel structure with symmetrical shape reset transistors and asymmetrical shape driver transistors

An image sensor includes: a light receiving section suitable for generating photocharges in response to incident light; and a driving section including a source follower transistor suitable for generating an output voltage corresponding to a reference voltage in response to the photocharges. The source follower transistor includes: a stack structure formed by sequentially stacking a first conductive layer, an insulating layer and a second conductive layer; an open portion formed through the second conductive layer and the insulating layer so as to expose the first conductive layer; a channel layer formed along the surface of the open portion so as to be connected to the first conductive layer and the second conductive layer; and a gate is connected to the light receiving section and which is formed over the channel layer so as to overlap the second conductive layer.

Transistor and image sensor having the same

This technology relates to an image sensor. The image sensor may include a substrate including a photoelectric conversion element; a pillar formed over the photoelectric conversion element and having a concave-convex sidewall; a channel film formed along a surface of the pillar and for having at least one end coupled to the photoelectric conversion element; and a transfer gate formed over the channel film.

Image sensor and method for fabricating the same

An image sensor may include: a photoelectric conversion element including a second conductive layer formed over a first conductive layer; an insulating layer and a third conductive layer which are sequentially formed over the second conductive layer; an opening exposing the second conductive layer through the third conductive layer and the insulating layer; a channel layer formed along the surface of the opening, and including first and second channel layers which are coupled to each other while having different conductivity types; and a transfer gate formed over the channel layer to fill the opening, and partially formed over the third conductive layer.

An image sensor may include: a photoelectric conversion element suitable for generating a photo charge in response to incident light; and a transfer transistor suitable for transferring the photo charge generated by the photoelectric conversion element to a floating diffusion in response to a transfer signal, the transfer transistor comprising a first transfer gate formed over the photoelectric conversion element; an opening formed in the first transfer gate and exposing the photoelectric conversion element; a second transfer gate formed in the opening; and a channel layer interposed between the first and second transfer gates and between the photoelectric conversion element and the second transfer gate.

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Gyeonggi-do, South Korea

Pyong-Su Kwag