Texas Instruments Corporation

Pushpa Mahalingam

Umamaheswari Aghoram

Alexei Sadovnikov

Bhaskar Srinivasan

Mona M Eissa

Brian Goodlin

Eugene C Davis

Yanbiao Pan

Erich Wesley Kinder

Binghua Hu

Mahalingam Nandakumar

Philipp Steinmann

Eric W Beach

Weidong Tian

Siang Ping Kwok

Sopa Chevacharoenkul

Xinfen Chen

Christopher Scott Whitesell

Robert M Higgins

Corinne Ann Gagnet

Gang Xue

Robert Hung Nguyen

Marshall O Cathey, Jr

David C Guiling

A system and method for growing fine grain polysilicon. In one example, the method of forming an integrated circuit includes forming a dielectric layer over a semiconductor substrate, and forming a polysilicon layer over the dielectric layer. The polysilicon layer is formed by a chemical vapor deposition process that includes providing a gas flow including disilane and hydrogen gas over the semiconductor substrate.

Small grain size polysilicon engineering for threshold voltage mismatch improvement

An integrated circuit includes a dielectric isolation structure formed at a surface of a semiconductor substrate and a polysilicon resistor body formed on the dielectric isolation structure. The polysilicon resistor body includes an N-type dopant having an N-type dopant concentration, nitrogen having a nitrogen concentration, and carbon having a carbon concentration. The sheet resistance of the resistor body is greater than 5 kΩ/square.

Polysilicon resistors with high sheet resistance

Described examples include an integrated circuit having a transistor with a first gate on a first gate insulating layer. The transistor also has second gate separated from the first gate by a gate gap. The integrated circuit also includes a channel well at the gate gap extending under the first gate and the second gate. The transistor has a first source in the channel adjacent to an edge of the first gate. The transistor having a second source formed in the channel adjacent to an edge of the second gate separated from the first source by a channel gap. The transistor has at least one back-gate contact, the at least one back-gate contact separated from the first gate by a first back-gate contact gap and separated from the second gate by a second back-gate contact gap.

Laterally diffused metal-oxide semiconductor (LDMOS) transistor with integrated back-gate

A microelectronic device including an analog MOS transistor. The analog transistor has a body well having a first conductivity type in a semiconductor material of a substrate of the microelectronic device. The body well extends deeper in the substrate than a field relief dielectric layer at the top surface of the semiconductor material. The analog transistor has a drain well and a source well having a second, opposite, conductivity type in the semiconductor material, both contacting the body well. The drain well and the source well extend deeper in the substrate than the field relief dielectric layer. The analog transistor has a gate on a gate dielectric layer over the body well. The drain well and the source well extend partway under the gate at the top surface of the semiconductor material.

Low cost, high performance analog metal oxide semiconductor transistor

Apparatus, and their methods of manufacture, that include an insulating feature above a substrate and a resistor formed on the insulating feature. Forming the resistor includes depositing polysilicon and doping the polysilicon (e.g., in-situ) with a carbon dopant and/or an oxygen dopant.

Carbon and/or oxygen doped polysilicon resistor

A method of forming an integrated circuit, including first, positioning a semiconductor wafer in a processing chamber; second, exposing portions of the semiconductor wafer, including introducing a first amount of hydrogen into the processing chamber and introducing a first amount of oxygen into the processing chamber; and, third, introducing at least one of a second amount of hydrogen or a second amount of oxygen into the processing chamber, the second amount of hydrogen greater than zero and less than the first amount of hydrogen and the second amount of oxygen greater than zero and less than the first amount of oxygen.

Gate oxide fabrication and system

An integrated circuit (IC) includes a semiconductor surface layer of a substrate including circuitry formed in the semiconductor surface layer configured together with a Metal-Insulator-Metal (MIM) capacitor. A multi-layer metal stack on the semiconductor surface layer includes a bottom plate contact metal layer including a bottom capacitor plate contact. A first interlevel dielectric (ILD) layer is over the bottom plate contact metal layer. The MIM capacitor includes a trench in the first ILD layer over the bottom capacitor plate contact, wherein the trench is lined by a bottom capacitor plate with a capacitor dielectric layer thereon, and a top capacitor plate on the capacitor dielectric layer. A fill material fills the trench to form a filled trench. A second ILD layer is over the filled trench. A filled via through the second ILD layer provides a connection to the top capacitor plate.

IC having trench-based metal-insulator-metal capacitor

A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure located between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon oxide.

LDMOS with high-k drain STI dielectric

An integrated circuit (IC) includes a semiconductor surface layer of a substrate including circuitry formed in the semiconductor surface layer configured together with a Metal-Insulator-Metal (MIM) capacitor. A multi-layer metal stack on the semiconductor surface layer includes a bottom plate contact metal layer including a bottom capacitor plate contact. A first interlevel dielectric (ILD) layer is over the bottom plate contact metal layer. The MIM capacitor includes a trench in the first ILD layer over the bottom capacitor plate contact, wherein the trench is lined by a bottom capacitor plate with a capacitor dielectric layer thereon, and a top capacitor plate on the capacitor dielectric layer. A fill material fills the trench to form a filled trench. A second ILD layer is over including the filled trench. A filled via through the second ILD layer provides a contact to a top plate contact on the top capacitor plate.

A method of forming a semiconductor device includes forming source regions and drain regions in a semiconductor substrate, and a gate electrode over said semiconductor substrate and between said source and drain regions. The gate electrode is formed from a first semiconductor gate electrode layer deposited on said gate dielectric layer at a first substrate temperature. A second semiconductor gate electrode layer is deposited on the first semiconductor gate electrode layer at a second substrate temperature greater than said first temperature. The two gate electrode layers may be annealed to form a homogenous polycrystalline layer with improved grain size distribution, thereby improving transistor matching in a semiconductor device.

Polysilicon gate formation in CMOS transistors

A laterally diffused metal oxide silicon (LDMOS) transistor and a method of making the LDMOS transistor are disclosed. The LDMOS transistor includes a drain drift region formed in a substrate and containing a drain contact region. A gate structure overlies a channel region in the substrate and a first shallow-trench isolation (STI) structure is formed between the drain contact region and the channel region. The first STI structure contains a high-k dielectric and a second STI structure contains silicon dioxide.

A method of forming integrated circuits (IC) having at least one metal insulator metal (MIM) capacitor. A bottom electrode is formed on a predetermined region of a semiconductor surface of a substrate. At least one dielectric layer including silicon is formed on the bottom electrode, wherein a thickness of the dielectric layer is &#x3c;1,000 A. A top electrode layer is formed on the dielectric layer. A patterned masking layer is formed on the top electrode layer. Etching using dry-etching at least in part is used to etch the top electrode layer outside the patterned masking layer to reach the dielectric layer, which removes &#x2266;100 A of the thickness of the dielectric layer. The dry etch process includes using a first halogen comprising gas, a second halogen comprising gas that comprises fluorine, and a carrier gas.

Forming integrated circuit devices with metal-insulator-metal capacitors using selective etch of top electrodes

A thin film resistor structure () is formed on a dielectric layer (). A capping layer () is formed above said thin film resistor structure () and vias () are formed in the capping layer () using a two step etching process comprising of a dry etch process and a wet etch process. Conductive layers () are formed in the vias and form electrical contacts to the thin film resistor structure ().

Growing community of inventors

Richardson, TX, United States of America

Pushpa Mahalingam