Texas Instruments Corporation

Pushkar Prabhakar Apte

Ajit P Paranjpe

Mehrdad M Moslehi

Richard Gene Burch

Sharad Saxena

Purnendu K Mozumder

Joseph C Davis

Karthik Vasanth

Suraj Rao

Chenjing L Fernando

A silicide process using a pre-anneal amorphization implant prior to silicide anneal. A layer of titanium is deposited and reacted to form titanium silicide ( ) and titanium nitride. The titanium nitride is removed and a pre-anneal amorphization implant is performed to enable increased transformation of the silicide ( ) from a higher resistivity phase to a lower resistivity phase. A heavy dopant species ( ) is used for the pre-anneal amorphization implant such as arsenic, antimony, or germanium. After the implant, the silicide anneal is performed to accomplish the transformation. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.

Approaches for mitigating the narrow poly-line effect in silicide formation

Method for adequately modeling process induced variabilities is disclosed that comprises the steps of acquiring experimental data and defining a particular design space. Values for the mean and standard deviation of the experimental data at each of the points defining the design space are calculated. The experimental values of the output parameters at each of the design points is normalized to extract the shape of the distribution of each of the design points. The normalized values are then merged to form a cumulative distribution function associated with the data. The cumulative distribution function is applied to a new design point in a predicted fashion by first calculating a mean and standard deviation value for the new point by interpolating from the mean and standard deviation values from the experimental data. The cumulative distribution function is then scaled and centered using the interpolated mean and standard deviation values to provide a predicted data distribution for the new design point.

System and method for non-parametric modeling of processed induced variability

A titanium-silicide process using a capping layer to reduce the silicide sheet resistance. A layer of titanium (20) is deposited. A react capping layer (22) may then be deposited to prevent contaminants from entering the titanium layer (20)during the subsequent react step. The layer of titanium (20) is then reacted to form titanium-silicide (32). The react capping layer (22) is then removed and an anneal capping layer (36) is deposited to prevent contaminants from entering the silicide layer (32) during the subsequent anneal step. Then, the silicide anneal is performed to accomplish to transformation to a lower resistivity phase of silicide. An advantage of the invention is providing a silicide process having reduced silicide sheet resistance for narrow polysilicon lines.

Use of a capping layer to attain low titanium-silicide sheet resistance

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Dallas, TX, United States of America

Pushkar Prabhakar Apte