Arm Limited

Artisan Components, Inc.

Arm Physical Ip, Inc.

Puneet Sawhney

Scott T Becker

Brian Reed

Jayanth Thyamagundlam

Bingda Brandon Wang

George Shing

Jamil Kawa

Shrisagar Dwivedi

Rahul Nimaiyar

Anwar Awad

A method of generating a mask for fabrication of a physical layer of an integrated circuit is provided. Multiple design layers are provided which comprise a programmable subcomponent configuration layer defining logical configurations of programmable subcomponents. A mask generation procedure transforms a selected design layer into a mask for fabrication of a physical layer. A mask modification procedure amends the mask to ensure that the physical layer will be reliably fabricated when using the mask. A non-functional design layer which does not represent one of said multiple physical layers represents further possible positions for said set of physical structures in said selected physical layer, which are not represented in said programmable subcomponent configuration layer. The mask modification procedure treats the non-functional design layer as a programmable subcomponent configuration layer. This enables the programmable subcomponent configuration layer to be modified without affecting the masks previously generated for other physical layers.

Method of mask generation for integrated circuit fabrication

An integrated circuit is provided with a power domain which can be selectively powered-up or powered-down. An output circuitry serving to buffer a signal generated by the core circuitry within such a power domain has its own output power supply voltage. An adaptive voltage sensing circuit senses when the core power supply voltage to the core circuitry falls below a threshold level and generates a voltage-low signal. If output signal retention has been preselected to be active for the output signal concerned, then the output circuitry responds to the voltage-low signal by maintaining the output signal state (output signal driven low, output signal driven high or output signal in a high impedance drive state). The retention mode is preselected by a pulse with its value stored within a mode latch indicating whether or not retention is required. Thus, when the adapted voltage sensing circuitry itself senses the voltage level for the core circuitry falling below the threshold, it activates the retention operation.

Maintaining output I/O signals within an integrated circuit with multiple power domains

An invention is provided for a feed forward circuit that reduces delay through an inverting circuit. The feed forward circuit includes an inverter having an input and an output, and an inverting circuit having an input and an output. The input of the inverting circuit is coupled to the output of the inverter. A feed forward transistor having a gate coupled to the input of the inverter and a terminal coupled to the output of the inverting circuit also is included. In operation the feed forward transistor decreases the amount of time required for the output of the inverting circuit to change state. In sum, the invention reduces the delay when the inverting circuit transitions to a high state, without affecting the timing of the transition to a low state.

Feed-forward circuit for reducing delay through an input buffer

An invention is disclosed for protecting an input buffer. A current from a p-supply to an input buffer is lowered when an input voltage to the input buffer is tolerant HIGH. The p-supply being a Vvoltage supplied to a p-channel transistor in the input buffer. In addition, the p-supply is set to a particular voltage when the input voltage to the input buffer is LOW, the particular voltage being at a specific value such that input transistors within the input buffer do not experience overstress voltages. Optionally, p-supply can be prevented from supplying current to the input buffer when an input voltage to the input buffer is tolerant HIGH.

Voltage tolerant circuit for protecting an input buffer

The present invention provides a voltage tolerant input/output circuit configured to ensure proper interface tolerance between various close voltages in deep sub-micron circuits without any DC leakage. The voltage tolerant input/output circuit includes (1) an arbiter circuit logically configured to ensure that a gate of a P-driver of the voltage tolerant input/output circuit is biased at the higher of an input/output voltage and an input/output supply voltage when the P-driver is tri-stated, (2) a bias circuit logically configured to biased a floating N-well of the P-driver to ensure that no parasitic diodes formed between any source or drain of a p-device of the voltage tolerant input/output circuit and the N-well of the P-driver is forward biased, and (3) a driver circuit comprising the P-driver.

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San Jose, CA, United States of America

Puneet Sawhney