Samsung Electronics Co., Ltd.

Pun-jae Choi

Geun-woo Ko

Yong-Min Kwon

Jun-ho Lee

Jong-Hyun Lee

Jong-hyun Lee

Seung-woo Lee

Jung-jin Kim

Si-han Kim

Jin-wook Chung

Sung-don Gang

Ah-young Woo

A semiconductor light-emitting device includes a plurality of light-emitting device structures separated from each other and arranged in a matrix form. A pad region at least partially surrounds the plurality of light-emitting device structures. The pad region is disposed outside of the plurality of light-emitting device structures. A partition structure is disposed on a first surface of the plurality of light-emitting device structures and is further disposed between adjacent light-emitting device structures of the plurality of light-emitting device structures. The partition structure defines a plurality of pixel spaces within the plurality of light-emitting device structures. A fluorescent layer is disposed on the first surface of the plurality of light-emitting device structures and fills each of the plurality of pixel spaces.

Pixel-type semiconductor light-emitting device and method of manufacturing the same

A light-emitting device includes an emission array including a plurality of light-emitting elements and a partition wall. The emission array includes a first region and a second region adjacent to each other. The partition wall is configured to isolate the first region and the second region from each other, such that the partition wall at least partially defines the first region in the emission array. The first region is associated with a first emission factor and the second region is associated with a second emission factor, the second emission factor different from the first emission factor.

Light-emitting devices, headlamps for vehicles, and vehicles including the same

A light source module including: a printed circuit board; a light emitting device mounted on the printed circuit board and including a plurality of subarrays each of the plurality of subarrays including a plurality of light emitting cells; and a plurality of driving chips mounted on the printed circuit board, wherein each of the plurality of driving chips respectively drives a corresponding one of the plurality of subarrays, wherein the plurality of subarrays are electrically isolated from each other.

Light emitting device and a light source module including the same

A semiconductor light emitting device may include a light emitting package. A light emitting package may include a light emitting stack including a sequential stack of a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer. An encapsulation layer may at least partially surround the second conductivity type semiconductor layer, and a wavelength conversion layer may cover the first conductivity type semiconductor layer. One or more of the encapsulation layer and the wavelength conversion layer may have a greater coefficient of thermal expansion (CTE) than a GaN-based compound semiconductor. The semiconductor light emitting device may include a stress applying structure that may apply a tensile stress to the light emitting stack. The light emitting stack may have reduced thermal droop at an operation temperature and improved luminous efficiency.

Light emitting packages

Growing community of inventors

Yongin-si, South Korea

Pun-jae Choi