Samsung Electronics Co., Ltd.

Samsung Led Co., Ltd.

Samsung Electro-mechanics Co., Ltd.

Other

Pun Jae Choi

Myong Soo Cho

Ki Yeol Park

Jin Hyun Lee

Sang Yeob Song

Yu Seung Kim

Jin Bock Lee

Sang Bum Lee

Si Hyuk Lee

Grigory Onushkin

Seon Young Myoung

Jung Jae Lee

Masayoshi Koike

Sangseok Lee

Yong Min Kwon

Junghee Kwak

Jae-Yoon Kim

Jin Wook Chung

Sungwon Ko

Geun Woo Ko

Suyeol Lee

Seungwan Chae

Hae Youn Hwang

Suk Youn Hong

Jeonghwan Jang

Jong Ho Lee

Dong Ho Kim

Jun Ho Lee

Hyun Soo Kim

Han Kyu Seong

Seok Min Hwang

Yung Ho Ryu

Jae In Sim

Young Soo Park

Joong Kon Son

Tae Young Park

Jong Hoon Lim

Kyoung Jun Kim

Jin Gi Hong

Yoon Joon Choi

Oleg Ledyaev

Jacob Chang-Lin Tarn

Seung Yu Kim

Jin Hyuk Song

Kwang Ki Choi

Ah Young Woo

Lee Jong Ho

A light emitting device is provided. The light emitting device includes a first semiconductor layer; a second semiconductor layer provided on a bottom surface of the first semiconductor layer; an active layer interposed between the first semiconductor layer and the second semiconductor layer; a dielectric layer provided on a bottom surface of the second semiconductor layer; a plurality of first n-contacts provided on a first etched surface of the first semiconductor layer; and a plurality of first p-contacts and a plurality of second p-contacts provided on the bottom surface of the second semiconductor layer. One first n-contact is disposed along a first edge region of the first semiconductor layer, one first p-contact is closer to the one first n-contact than one second p-contact, and an area of the one first p-contact is greater than an area of each of the second p-contacts.

Light emitting device

A light emitting diode (LED) module array including: a plurality of LED groups connected to each other in series, each LED group including a single rod-shaped LED module or a plurality of LED modules connected to each other in parallel, wherein a number of LED modules included in a first LED group is different from a number of LED modules included in a second LED group.

Light emitting diode (LED) module array and an LED lamp using the same

A semiconductor light emitting device includes a plurality of light emitting cells having first and second surface opposing each other, the plurality of light emitting cells including a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer therebetween, an insulating layer on the second surface of the plurality of light emitting cells and having first and second openings defining a first contact region of the first conductivity-type semiconductor layer and a second contact region of the second conductivity-type semiconductor layer, respectively, a connection electrode on the insulating layer and connecting a first contact region and a second contact region of adjacent light emitting cells, a transparent support substrate on the first surface of the plurality of light emitting cells, and a transparent bonding layer between the plurality of light emitting cells and the transparent support substrate.

Semiconductor light emitting device and LED module using the same

There is provided a semiconductor light emitting device including a conductive substrate, a first electrode layer, an insulating layer, a second electrode layer, a second semiconductor layer, an active layer, and a first semiconductor layer that are sequentially stacked. The contact area between the first electrode layer and the first semiconductor layer is 3% to 13% of the total area of the semiconductor light emitting device, and thus high luminous efficiency is achieved.

Method of manufacturing semiconductor light emitting device

There is provided a semiconductor light emitting device, a method of manufacturing the same, and a semiconductor light emitting device package using the same. A semiconductor light emitting device having a first conductivity type semiconductor layer, an active layer, a second conductivity type semiconductor layer, a second electrode layer, and insulating layer, a first electrode layer, and a conductive substrate sequentially laminated, wherein the second electrode layer has an exposed area at the interface between the second electrode layer and the second conductivity type semiconductor layer, and the first electrode layer comprises at least one contact hole electrically connected to the first conductivity type semiconductor layer, electrically insulated from the second conductivity type semiconductor layer and the active layer, and extending from one surface of the first electrode layer to at least part of the first conductivity type semiconductor layer.

Semiconductor light emitting device, method of manufacturing the same, and semiconductor light emitting device package using the same

A light emitting device package includes: a plurality of light emitting chips configured to emit respective wavelength lights, each chip comprising electrodes at a bottom of the chip to form a flip-chip structure; a plurality of wirings directly connected to the electrodes of the chips, respectively; a plurality of electrode pads disposed below the chips and directly connected to the wirings, respectively; and a molding member integrally formed in a single layer structure to cover upper surfaces and side surfaces of the chips, and including a translucent material having a predetermined transmittance, wherein the wirings are disposed below a lower surface of the molding member.

Light emitting device package

Semiconductor light emitting device

A semiconductor light-emitting device package includes: a light-emitting structure having a first surface, a second surface opposite to the first surface and side surfaces disposed between the first and the second surfaces, the light-emitting structure comprising a first light-emitting laminate and a second light-emitting laminate, each of the first and the second light emitting laminates including: a first conductivity-type semiconductor layer; an active layer, and a second conductivity-type semiconductor layer, an interconnector provided on the second surface of the light-emitting structure and configured to electrically connect the first and the second light-emitting laminates; a metal guide surrounding the side surfaces of the light-emitting structure; and an encapsulant surrounding the metal guide and the second and the side surfaces of the light-emitting structure and exposing the first surface of the light-emitting structure.

Semiconductor light-emitting device package

A semiconductor light-emitting device includes a laminated semiconductor structure having a first surface and a second surface opposing each other, a first conductivity-type semiconductor layer and a second conductivity-type semiconductor layer respectively forming the first surface and the second surface, and an active layer. First and second electrodes are disposed on the first surface of the laminated semiconductor structure and the second surface of the laminated semiconductor structure, respectively. A connecting electrode extends to the first surface to be connected to the second electrode. A support substrate is disposed on the second electrode, and an insulating layer insulates the connecting electrode from the active layer and the first conductivity-type semiconductor layer.

Semiconductor light-emitting device

There is provided a semiconductor light emitting device comprising a semiconductor stack having first and second main surfaces opposing each other, and comprising first and second conductivity-type semiconductor layers respectively defining the first and second main surfaces, and an active layer interposed between the first and second conductivity-type semiconductor layers; a plurality of contact holes penetrating the second conductivity-type semiconductor layer and the active layer, and one region of the first conductivity-type semiconductor layer; a first electrode layer disposed on the second main surface of the semiconductor stack, the first electrode layer extending and being connected to the one region of the first conductivity-type semiconductor layer through the contact holes; a second electrode layer disposed between the semiconductor stack and the first electrode layer and connected to the second conductivity-type semiconductor layer; and first and second interconnected bumps.

Semiconductor light emitting device, manufacturing method thereof, and semiconductor light emitting device package using the same

A semiconductor light emitting device includes a substrate, a semiconductor laminate disposed on the substrate and divided to a plurality of light emitting cells with an isolation region, and a wiring unit electrically connecting the plurality of light emitting cells. A region of lateral surfaces of each of the light emitting cells in which the wiring unit is disposed has a slope gentler than slopes of other regions of the lateral surfaces of each of the light emitting cells.

Manufacturing method of semiconductor light emitting device having sloped wiring unit

In a semiconductor light emitting device, a light emitting structure includes a first-conductivity type semiconductor layer, an active layer, and a second-conductivity type semiconductor layer, which are sequentially formed on a conductive substrate. A second-conductivity type electrode includes a conductive via and an electrical connection part. The conductive via passes through the first-conductivity type semiconductor layer and the active layer, and is connected to the inside of the second-conductivity type semiconductor layer. The electrical connection part extends from the conductive via and is exposed to the outside of the light emitting structure. An insulator electrically separates the second-conductivity type electrode from the conductive substrate, the first-conductivity type semiconductor layer, and the active layer. A passivation layer is formed to cover at least a side surface of the active layer in the light emitting structure. An uneven structure is formed on a path of light emitted from the active layer.

Growing community of inventors

Gyunggi-do, South Korea

Pun Jae Choi