Other

Pui Sze Lau

Xianda Zhou

Kin On Johnny Sin

The present invention relates to a power semiconductor device structure and a fabrication process, and provides a high-performance RC-IGBT structure that can be fabricated without a thin wafer process. To achieve this objective, the present invention provides an RC-IGBT structure, including: an emitter electrode at the front surface; a plurality of cells under the emitter electrode; an ndrift region under the cells; a collector electrode located at the back surface; a plurality of trenches located at the back surface and being filled by the collector electrode; a mechanical support semiconductor region located between the trenches; a pcollector region located at the top of each trench and connected to the collector electrode; an n buffer region located on top of each pcollector region and below the ndrift region; and an ncathode region at the sidewall of each trench and connected to the collector electrode.

Growing community of inventors

Hong Kong, China

Pui Sze Lau