Samsung Electronics Co., Ltd.

Pu-ra Kim

Young-Hoon Park

Sang-il Jung

Chan Jae Park

Jae-Ho Song

Dae-cheol Seong

Won-Je Park

Jong-wook Hong

Jin-Hyeong Park

Keo-sung Park

Eun-soo Kim

Won-jeong Lee

Example embodiments disclose an image sensor capable of preventing or reducing image lag and a method of manufacturing the same. Example methods may include forming a gate insulating film and a gate conductive film doped with a first-conductive-type dopant on a semiconductor substrate; forming a transfer gate pattern by patterning the gate insulating film and the gate conductive film; and fabricating a transfer gate electrode by forming a first-conductive-type photodiode in the semiconductor substrate adjacent to one region of the transfer gate pattern, by forming a second-conductive-type photodiode on the first-conductive-type photodiode, and by forming a first-conductive-type floating diffusion region in the semiconductor substrate adjacent to the other region of the transfer gate pattern.

Image sensor and method of manufacturing the same

Growing community of inventors

Gwangju Metropolitan, South Korea

Pu-ra Kim