Instytut Wysokich Cisnien Polskiej Akademii Nauk

Przemyslaw Wiśniewski

Tadeusz Suski

Sylwester Porowski

Izabella Grzegory

Piotr Perlin

Czeslaw Skierbiszewski

Michal Leszczyński

Anna Feduniewicz-Zmuda

Michal Boćkowski

Marcin Siekacz

The laser diode comprising crystalline substrate () where set of subsequent n-type layers, set of optically active layers () and set of p-type layers is deposited. The set of n-type layers comprise at least one buffer layer (), bottom n-type cladding layer () and n-type bottom waveguide layer. The set of p-type layers comprise at least p-type upper waveguide, which comprises electron blocking layer, upper p-type cladding layer () and p-type contact layer (). The electron blocking layer comprises In, AlGa, N alloy doped with magnesium where 1&#x2267;x&#x3e;0.001 a 1&#x2267;y 0. The way of making this invention is based on the epitaxial deposition of subsequent set of the n-type layers (), set of optically active layers () and set of p-type layers () where the p-type waveguide layer () and p-type contact layer () is deposited with presence of indium in plasma assisted molecular beam epitaxy method.

Nitride based laser diode and method of manufacturing nitride based laser diode

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Warsaw, Poland

Przemyslaw Wiśniewski