University of Minnesota

Protyush Sahu

Jian-Ping Wang

Delin Zhang

A magnetic device includes a layer stack comprising a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; a dielectric barrier layer on the second ferromagnetic layer; an insertion layer positioned between the second ferromagnetic layer and the dielectric barrier layer; and a fixed layer or an electrode on the dielectric barrier layer. In some examples, a magnetic orientation of the second ferromagnetic layer is switched by a bias voltage across the layer stack without application of an external magnetic field; an antiferromagnetic coupling of the first and second ferromagnetic layers is increased by the bias voltage applying a negative charge to the fixed layer or the electrode, and the antiferromagnetic coupling of the first and second ferromagnetic layers is decreased by the bias voltage applying a positive charge to the fixed layer or the electrode.

Electric field switchable magnetic devices

In some examples, a device includes a dielectric material, a ferromagnetic material, and a topological material positioned between the dielectric material and the ferromagnetic material. The device is configured to trap electric charge inside the dielectric material or at an interface of the dielectric material and the topological material. The device is configured to switch a magnetization state of the ferromagnetic material based on a current through the topological material or based on a voltage in the topological material.

Topological material for trapping charge and switching a ferromagnet

A magnetic device may include a layer stack. The layer stack may include a first ferromagnetic layer; a spacer layer on the first ferromagnetic layer; a second ferromagnetic layer on the spacer layer; and a dielectric barrier layer on the second ferromagnetic layer. In some examples, the layer stack may also include an additional ferromagnetic layer and an additional spacer layer. The magnetic device also may include a voltage source configured to apply a bias voltage across the layer stack to cause switching of a magnetic orientation of the second ferromagnetic layer without application of an external magnetic field.

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Minneapolis, MN, United States of America

Protyush Sahu