Advanced Technology Materials, Inc.

Entegris, Inc.

Prerna Sonthalia

Emanuel Israel Cooper

Peng Zhang

Karl E Boggs

Jeffrey A Barnes

David Angst

Michael B Korzenski

William R Bowers

Kevin Paul Yanders

Nicole E Thomas

Eileen Sparks

Mark A Biscotto

Jeffrey Barnes

An cleaning composition and process for cleaning post-chemical mechanical polishing (CMP) residue and contaminants from a microelectronic device having said residue and contaminants thereon. The cleaning compositions include novel corrosion inhibitors. The composition achieves highly efficacious cleaning of the post-CMP residue and contaminant material from the surface of the microelectronic device without compromising the low-k dielectric material or the copper interconnect material.

Antioxidants for post-CMP cleaning formulations

Compositions useful for the selective removal of silicon nitride materials relative to poly-silicon, silicon oxide materials and/or silicide materials from a microelectronic device having same thereon. The removal compositions include fluorosilicic acid, silicic acid, and at least one organic solvent. Typical process temperatures are less than about 100&#xb0; C. and typical selectivity for nitride versus oxide etch is about 200:1 to about 2000:1. Under typical process conditions, nickel-based silicides as well as titanium and tantalum nitrides are largely unaffected, and polysilicon etch rates are less than about 1 &#x212b; min.

Compositions and methods for the selective removal of silicon nitride

Growing community of inventors

Mumbai, India

Prerna Sonthalia