International Business Machines Corporation

Premlatha J Jagannathan

Leo L Linehan

Randolph J Smith

Wayne Martin Moreau

Harbans S Sachdev

Ratnam Sooriyakumaran

Krishna Gandhi Sachdev

Hiroshi Ito

Gregory Breyta

Phillip Joe Brock

Ranee W Kwong

Ahmad D Katnani

James Allan Bruce

William R Brunsvold

Daniel Joseph Dawson

Willard E Conley

Robert Neal Lang

Ronald Anthony DellaGuardia

Andrew Robert Eckert

Melvin W Montgomery

Joel R Whitaker

Mary Conroy Bushey

Dianne L Sundling

Steve S Miura

Kathleen H Martinek

Walter E Mlyriko

Charlotte R DeWan

Steve S Muira

A photoresist composition for use in lithographic processes in the fabrication of semiconductor devices such as integrated circuit structures is disclosed. The photoresist composition includes a monomeric sensitizer bounding to a base-soluble long chain polymer.

Polymer-bound sensitizer

Method to reduce plasma etch fluting

Several mid UV photo acid generators (PAGs), a chemically amplified photo resist (CAMP), and method for improving nested to isolated line bias are provided. Similarly, photo speed may also be improved. Unlike conventional mid UV PAGs, the present invention's PAG compounds, resist composition, and method do not require a mid UV sensitizer. Specifically, PAGs are provided that bear a chromophore capable of receiving mid UV radiation, particularly I-line, and that are suitable for use in a chemically amplified photo resist having a photo speed of 500 mJ/cm.sup.2 or less, but preferrably 200 mJ/cm.sup.2 or less. For example, the PAGs can be a sulfonium or iodonium salt, such as anthryl, butyl, methyl sulfonium triflate and bis(4-t-butylphenyl)iodonium 9,10-dimethoxyanthracene sulfonate. The chromophore forming a part of the PAGs can be selected from polyaromatic hydrocarbons, for example, chrysenes, pyrenes, fluoranthenes, anthrones, benzophenones, thioxanthones, anthracenes, and phenanthrenes, but preferably anthracenes.

Photo acid generator compounds, photo resists, and method for improving

A method is provided for forming a microlithographic relief image having a width of less than one half micron in a bilayer resist composition. The resist composition comprises a single component, silicon-containing photoimageable layer and a polymeric underlayer having a high optical density and a refractive index similar to the refractive index of the overlaying resist. The method provides for the formation of a relief image in the top layer using an i-line (365 nm) or deep ultra violet (170 to 300 nm) light source, followed by O.sub.2 RIE transfer of the relief image into the polymeric underlayer.

Method of forming sub-half micron patterns with optical lithography

A method of synthesizing a silicon-containing positive resist for use as a imaging layer in DUV, x-ray, or e-beam lithography is disclosed. The resist contains arylsilsesquioxane polymers with acid sensitive pendant groups as dissolution inhibitors and a photoacid generator.

Silicon containing positive resist for DUV lithography

High sensitivity, high contrast, heat-stable resist compositions for use in deep UV, i-line e-beam and x-ray lithography. These compositions comprise a film-forming polymer having aromatic rings activated for electrophilic substitution, an acid catalyzable crosslinking agent which forms a hydroxy-stabilized carbonium ion, and a photoacid generator. The compositions are aqueous base developable.

Crosslinkable aqueous developable photoresist compositions and method

Growing community of inventors

Essex Junction, VT, United States of America

Premlatha J Jagannathan