Globalfoundries Inc.

Marvell Asia Pte., Ltd.

Premachandran Chirayarikathuveedu

Anil Kumar

Luigi Pantisano

Rakesh Ranjan

Aarthi Sridharan

Carole Graas

Fahad Mirza

Sricharan Tubati

Gong Cheng

Nurul Islam Mohd

A method for forming a sensor with increased overhang to prevent passivation stress fractures is provided. Embodiments include forming a first passivation layer over a dielectric layer patterned over a first top metal layer of a logic region of a sensor and a second top metal layer of an array region of the sensor; planarizing the first passivation layer and the dielectric layer to form a level surface above the first top metal layer and the second top metal layer; etching the dielectric layer to form a pad opening in the array region of the sensor based on a predetermined overhang value, the pad opening exposing a portion of the surface of the second top metal layer; and forming a second passivation layer over the level surface and the pad opening in the array region.

Overhang model for reducing passivation stress and method for producing the same

A device and method to control the heating of an IC chip in a wafer form for measuring various parameters associated therewith are provided. Embodiments include a device having a silicon layer with an upper surface, and on a plastic carrier; a plurality of devices in the silicon layer and electrically coupled through the upper surface to a test control system; a through silicon via (TSV) extending into the silicon layer; and a parallel heating structure adjacent to the plurality of devices electrically coupled to the test control system.

Method and apparatus for quantifying defects due to through silicon VIAs in integrated circuits

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Premachandran Chirayarikathuveedu