The Uab Research Foundation (the University of Alabama at Birmingham)

Preeti Kumari

Biswajit Ray

Md Raquibuzzaman

Umeshwarnath Surendranathan

A system for testing memory includes logic that is configured to perform various normal memory operations (e.g., erase, read and write operations) on a memory device and to determine operational parameters associated with the memory operations. As an example, the amount of time to perform one or more memory operations may be measured, a number of errors resulting from the memory operations may be determined, or a number of memory cells storing noisy bits may be identified. One or more of the operational parameters may then be analyzed to determine whether they are in a range expected for counterfeit or defective memory. If so, the logic determines that the memory under test is counterfeit or defective and provides a notification about such determination.

Systems and methods for detecting counterfeit or defective memory

A method for radiation hardening flash memory performs accelerated aging on the flash memory by program-erase (PE) cycling the flash memory. Such accelerated aging induces trap states in the tunnel oxide layer of the flash memory, which results in improved ionizing radiation tolerance. The number of cycles used to harden a given memory cell is optimally determined in order to limit effects of the radiation hardening on the reliability of the cell.

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Huntsville, AL, United States of America

Preeti Kumari