Applied Materials, Inc.

Preetham Rao

Kartik Bhupendra Shah

Abhilash J Mayur

Mehran Behdjat

Subramani Iyer

Zhiyuan Ye

Schubert S Chu

Errol Antonio C Sanchez

Nyi O Myo

Norman L Tam

Martin A Hilkene

Richard Omar Collins

Dongming Iu

Kevin Joseph Bautista

Douglas Earl Holmgren

Matthew Spuller

Elizabeth Neville

Kong Lung Samuel Chan

Palamurali Gajendra

Gia Pham

Jau-Jiun Chen

Douglas E Holmgren

Embodiments of the disclosure generally relate to a semiconductor processing chamber. In one embodiment, semiconductor processing chamber is disclosed and includes a chamber body having a bottom and a sidewall defining an interior volume, the sidewall having a substrate transfer port formed therein, and one or more absorber bodies positioned in the interior volume in a position opposite of the substrate transfer port.

Thermal chamber with improved thermal uniformity

Embodiments of the present disclosure generally relate to apparatus and methods for semiconductor processing, more particularly, to a thermal process chamber. The thermal process chamber may include a substrate support, a first plurality of heating elements disposed over the substrate support, and one or more high-energy radiant source assemblies disposed over the first plurality of heating elements. The one or more high-energy radiant source assemblies are utilized to provide local heating of cold regions on a substrate disposed on the substrate support during processing. Localized heating of the substrate improves temperature profile, which in turn improves deposition uniformity.

Diode laser for wafer heating for EPI processes

Embodiments described herein include a susceptor for semiconductor processing including an oriented graphite plate that may have a thickness of at least 1 mm. The susceptor may have a support member, and the oriented graphite plate may be disposed on the support member. The support member may have a center thermal conduit and an edge thermal conduit, and may be substantially solid between the center thermal conduit and the edge thermal conduit.

Graphite susceptor

A lamphead for thermal processing of a substrate is provided. The lamphead includes a housing having a first edge surrounding a first plane. The lamphead further includes a plurality of segmented lamps disposed within the housing, each segmented lamp aligned substantially parallel to the first plane. Each segmented lamp includes a first end connected to a location on the housing; a first wire segment connected to the first end; a first filament connected to the first wire segment; an intermediate wire segment connected to the first filament; a second filament connected to intermediate wire segment; a second wire segment connected to the second filament; and a second end connected to the second wire segment; where the second end is connected to an opposing location on the housing.

Rapid thermal processing chamber with linear control lamps

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Bengaluru, India

Preetham Rao