Infineon Technologies Americas Corp.

Infnieon Technologies Americas Corp.

Praveen Shenoy

A power device includes a gate, and a segmented source adjacent to the gate, wherein the segmented source includes segments having a first threshold voltage and includes segments having a second threshold voltage different from the first threshold voltage.

Device having increased forward biased safe operating area using source segments with different threshold voltages and method of operating thereof

A method for increasing a forward biased safe operating area of a device includes forming a gate; and forming a segmented source close to the gate, wherein the segmented source includes first segments associated with a first threshold voltage and second segments associated with a second threshold voltage different from the first threshold voltage, wherein at least one device characteristic associated with the first segments is different from the same device characteristic associated with the second segments.

Method of increasing forward biased safe operating area using different threshold voltage segments

Device with increased forward biased safe operating area (FBSOA) through using source segments having different threshold voltages

A power device includes two gate stripes formed on an upper surface of the device, a source stripe perimeter comprising the total available shared perimeter between the two gate stripes and a corresponding source stripe, and a segmented source formed between the two gate stripes, wherein an edge length of the segmented source covers between 5% to 95% of the source stripe perimeter.

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Chandler, AZ, United States of America

Praveen Shenoy