International Business Machines Corporation

Solar-tectic LLC

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Dartmouth College

Praveen Chaudhari

James Andrew Lacey

Shui-Chih Alan Lien

James Patrick Doyle

Eileen Ann Galligan

Minhua Lu

Richard Joseph Gambino

Robert J Von Gutfeld

Alessandro Cesare Callegari

Paul Stephen Andry

Jerome J Cuomo

James L Speidell

Sampath Purushothaman

Hiroki Nakano

Ali Afzali-Ardakani

Hendrik F Hamann

Robert B Laibowitz

Kei-Hsiung Yang

Ashok Chaudhari

Richard Allen John

Shui-Chin Alan Lien

Paul Andrew Moskowitz

Gareth Geoffrey Hougham

Harley K Heinrich

Alan Edward Rosenbluth

Fuad Elias Doany

Michael John Brady

Mahesh Govind Samant

John J Ritsko

Roger Hilsen Koch

James Henry Glownia

Duane B Dimos

Jochen D Mannhart

Chang Chyi Tsuei

Cheng-Chung J Chi

Joseph Michael Viggiano

Joachim Stohr

Kevin K Chan

Christopher Vincent Jahnes

Alejandro Gabriel Schrott

David Robert Medeiros

Matthew R Wordeman

Lia Krusin-Elbaum

James M Harper

Jifeng Liu

David J Perlman

George A Sai-Halasz

Yuan-Chen Sun

Alan B Fowler

Francois M d'Heurle

Thomas R McGuire

Rene Muller

Yoshimine Kato

Amitava Gangulee

Gregory John Clark

Ralph Feder

Eugene E Tynan

G V Chandrashekhar

Eti Ganin

Chen Cai

Shuichi Odahara

Ned J Chou

John Wauchope Matthews

James A VanVechten

John B Kiessling

Margaret A Frisch

Yuhichi Momoi

Hiro Nakano

Curtis E Farrell

Roger Hilson Koch

Geoffrey Richard Woolhouse

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on flexible substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films are nearly to entirely free of metal impurities and have widespread application in the manufacture and benefit of photovoltaic and display technologies.

Methods of growing heteroepitaxial single crystal or large grained semiconductor films and devices thereon

A method is provided for making smooth crystalline semiconductor thin-films and hole and electron transport films for solar cells and other electronic devices. Such semiconductor films have an average roughness of 3.4 nm thus allowing for effective deposition of additional semiconductor film layers such as perovskites for tandem solar cell structures which require extremely smooth surfaces for high quality device fabrication.

A method is provided for depositing textured wide bandgap materials, such as polymers or perovskites, on a textured transparent conducting oxide on inorganic thin-film, which serves as a recombination layer, or interfacial conducting layer (ICL), for tandem or multi junction solar cells.

A method is disclosed for making semiconductor films from a eutectic alloy comprising a metal and a semiconductor. Through heterogeneous nucleation said film is deposited at a deposition temperature on relatively inexpensive buffered substrates, such as glass. Specifically said film is vapor deposited at a fixed temperature in said deposition temperature where said deposition temperature is above a eutectic temperature of said eutectic alloy and below a temperature at which the substrate softens. Such films could have widespread application in photovoltaic and display technologies.

The present invention concerns the enhancement of critical current densities in cuprate superconductors. Such enhancement of critical current densities include using wave function symmetry and restricting movement of Abrikosov (A) vortices, Josephson (J) vortices, or Abrikosov-Josephson (A-J) vortices by using the half integer vortices associated with d-wave symmetry present in the grain boundary.

Enhancing critical current density of cuprate superconductors

Inexpensive semiconductors are produced by depositing a single crystal or large grained silicon on an inexpensive substrate. These semiconductors are produced at low enough temperatures such as temperatures below the melting point of glass. Semiconductors produced are suitable for semiconductor devices such as photovoltaics or displays.

Method of growing heteroepitaxial single crystal or large grained semiconductor films on glass substrates and devices thereon

A method of assembling a circuit includes providing a template, enabling a semiconductor material to self assemble on the template, and enabling self-assembly of a connection between the semiconductor material and the template to form the circuit and a circuit created by self-assembly.

Method of self-assembling electronic circuitry and circuits formed thereby

The present invention provides a substrate having thereon a patterned small molecule organic semiconductor layer. The present invention also provides a method and a system for producing a substrate having thereon a patterned small molecule organic semiconductor layer. The substrate having thereon a patterned small molecule organic semiconductor layer is produced by exposing a donor substrate having thereon a small molecule organic semiconductor layer to energy to cause the thermal transfer of a small organic molecule onto an acceptor substrate.

System and method of transfer printing an organic semiconductor

A liquid crystal display device includes an alignment layer with constituent materials. The constituent materials have a stoichiometric relationship configured to provide a given pretilt angle. Liquid crystal material is provided in contact with the alignment layer. A method for forming an alignment layer for liquid crystal displays includes forming the alignment layer on a substrate by introducing an amount of material to adjust a stoichiometric ratio of constituent materials wherein the amount is determined to provide a given pretilt angle to the alignment layer. Ions are directed at the alignment layer to provide uniformity of the pretilt angle.

Tilted vertical alignment of liquid crystals employing inorganic thin film composition and ion beam treatment

The present invention provides a substrate having thereon a patterned small molecule organic semiconductor layer. The present invention also provides a method and a system for the production of the substrate having thereon a patterned small molecule organic semiconductor layer. The substrate with the patterned small molecule organic semiconductor layer is prepared by exposing a region of a substrate having thereon a film of a precursor of a small organic molecule to energy from an energy source to convert the film of a precursor of a small organic molecule to a patterned small molecule organic semiconductor layer.

Use of an energy source to convert precursors into patterned semiconductors

A method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions, and reactive gas is introduced to the ion beam to saturate dangling bonds on the surface. Another method for preparing an alignment layer surface provides a surface on the alignment layer. The surface is bombarded with ions and quenched with a reactive component to saturate dangling bonds on the surface.

Stability of ion beam generated alignment layers by surface modification

Multi-domain liquid crystal cells having twist angles less than 90 degrees, and LCDs containing such liquid crystal cells, are provided. Such liquid crystal cells are stable, particularly at zero and high fields, and provide wide viewing angles. Also provided are methods of using an adjustable particle beam in combination with a mask to generate multi-domains alignments. Such methods are useful for producing liquid crystal cells in general, and for producing the novel multi-domain low twist angle liquid crystal cells of the present invention in particular.

Multi-domain low twist angle liquid crystal cells and methods of production thereof

Growing community of inventors

Briarcliff Manor, NY, United States of America

Praveen Chaudhari