International Business Machines Corporation

Pratik P Joshi

Maxime Darnon

Qinghuang Lin

Gerald Warren Gibson, Jr

Mahmoud M Khojasteh

Nicholas C M Fuller

Rajiv M Ranade

George Gabriel Totir

Ying Di Zhang

Deborah A Neumayer

Solomon Assefa

Ryan M Martin

The present disclosure relates to a structure comprising and to methods of making the structure and using the structure to measure the electrical characteristics of carbon nanotubes.

Methodology for evaluation of electrical characteristics of carbon nanotubes

The present disclosure relates to a structure comprising

The present disclosure relates to a method of patterning a photosensitive material on a polymeric fill matrix comprising at least one latent photoacid generator; and a structure prepared according to said method. The method comprises:

Method of patterning photosensitive material on a substrate containing a latent acid generator

A method for forming a photodetector device includes forming waveguide feature on a substrate, and forming a photodetector feature including a germanium (Ge) film, the Ge film deposited on the waveguide feature using a plasma enhanced chemical vapor deposition (PECVD) process, the PECVD process having a deposition temperature from about 500&#xb0; C. to about 550&#xb0; C., and a deposition pressure from about 666.612 Pa to about 1066.579 Pa.

Deposition of germanium film

An organic planarizing layer (OPL) is formed atop a semiconductor substrate which includes a plurality of gate lines thereon. Each gate line includes at least a high k gate dielectric and a metal gate. A patterned photoresist having at least one pattern formed therein is then positioned atop the OPL. The at least one pattern in the photoresist is perpendicular to each of the gate lines. The pattern is then transferred by etching into the OPL and portions of each of the underlying gate lines to provide a plurality of gate stacks each including at least a high k gate dielectric portion and a metal gate portion. The patterned photoresist and the remaining OPL layer are then removed utilizing a sequence of steps including first contacting with a first acid, second contacting with an aqueous cerium-containing solution, and third contacting with a second acid.

Use of an organic planarizing mask for cutting a plurality of gate lines

The present disclosure relates to a method for selectively etching-back a polymer matrix to expose tips of carbon nanotubes comprising:

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Cliffside Park, NJ, United States of America

Pratik P Joshi