Applied Materials, Inc.

Novellus Systems Incorporated

Prashanth Kothnur

Alexander N Lerner

Roey Shaviv

Satish Radhakrishnan

Anantha K Subramani

Keith A Miller

Martin Lee Riker

Umesh M Kelkar

William R Johanson

Hanbing Wu

Joseph Michael Ranish

Ganesh Balasubramanian

Kartik Bhupendra Shah

Fuhong Zhang

Jianxin Lei

Bhaskar Kumar

Ala Moradian

Chi Hong Ching

Sidharth Bhatia

Jothilingam Ramalingam

Ashish Goel

Karthik Ramanathan

Vivek Bharat Shah

David Gunther

Mark Robert Denome

Anup Kumar Singh

Alexander Jansen

Wenting Hou

Deepak Jadhav

Elizabeth Neville

Graeme Jamieson Scott

Changgong Wang

Phillip Stout

Orlando Trejo

Xiaozhou Che

Sergey Meirovich

Emily Schooley

Ludovic Godet

Wei W Wang

Philip Allan Kraus

John C Forster

David Wingto Cheung

Thomas B Brezoczky

Tza-Jing Gung

Adolph Miller Allen

Joung Joo Lee

Steven Victor Sansoni

Bencherki Mebarki

Jun Xue

Matthew D Scotney-Castle

Ilya Lavitsky

Goichi Yoshidome

Thanh X Nguyen

John Joseph Mazzocco

Yu Liu

Wei Lei

Shirish A Pethe

Kishor Kumar Kalathiparambil

Farzad Houshmand

Yang Guo

Guojun Liu

Randy D Schmieding

Huatan Qiu

Suhas Bangalore Umesh

Praburam Gopal Raja

Brij Datta

Preetham Prahallada Rao

Andrew Tomko

Sushil Arun Samant

Sergei Klimovich

One or more embodiments described herein generally relate to methods and systems for forming films on substrates in semiconductor processes. In embodiments described herein, a process system includes different materials each contained in separate ampoules. Each material is flowed into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Methods for forming films on substrates

A first selection of a first fabrication process and/or first manufacturing equipment to perform manufacturing operations of the first fabrication process is received. The first selection is input into a digital replica of the first manufacturing equipment, where the digital replica outputs physical conditions of the first fabrication process. Environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process is determined. A modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment is determined. Applying the modification to the first fabrication and/or providing the modification for display by a graphical user interface (GUI) is performed.

Eco-efficiency (sustainability) dashboard for semiconductor manufacturing

Methods and apparatus for controlling a flow of process material to a deposition chamber. In embodiments, the apparatus includes a deposition chamber in fluid communication with one or more sublimators through one or more delivery lines, wherein the one or more sublimators each include an ampoule in fluid communication with the one or more delivery lines through an opening, and at least a first heat source and a second heat source, wherein the first heat source is a radiant heat source adjacent the ampoule and the second heat source is adjacent the opening, wherein the one or more delivery lines include one or more conduits between the deposition chamber and the one or more sublimators, and wherein the one or more conduits include one or more valves to open or close the one or more conduits, wherein the one or more valves in an open position prevents the flow of process material into the deposition chamber, and wherein the one or more valves in a closed position directs the flow of process material into the deposition chamber.

Apparatus and method for controlling a flow process material to a deposition chamber

Apparatus and methods for controlling plasma profiles during PVD deposition processes are disclosed. Some embodiments utilize EM coils placed above the target to control the plasma profile during deposition.

EM source for enhanced plasma control

Methods of processing a substrate in a PVD chamber are provided herein. In some embodiments, a method of processing a substrate in a PVD chamber, includes: sputtering material from a target disposed in the PVD chamber and onto a substrate, wherein at least some of the material sputtered from the target is guided to the substrate through a magnetic field provided by one or more upper magnets disposed about a processing volume of the PVD chamber above a support pedestal for the substrate in the PVD chamber, one or more first magnets disposed about the support pedestal and providing an increased magnetic field strength at an edge region of the substrate, and one or more second magnets disposed below the support pedestal that increase a magnetic field strength at a central region of the substrate.

Methods for shaping magnetic fields during semiconductor processing

A method includes measuring a subset of property values within a manufacturing chamber during a process performed on a substrate within the manufacturing chamber. The method further includes determining property values in the manufacturing chamber at locations removed from the locations the measurements are taken. The method further includes performing a corrective action based on the determined properties.

Virtual measurement of conditions proximate to a substrate with physics-informed compressed sensing

Methods of introducing precursors through a segmented showerhead are provided herein. In some embodiments, a method of introducing precursors through a segmented showerhead having a plurality of gas delivery portions that are fluidly isolated includes heating a first gas delivery portion to a first temperature; and simultaneously heating a second gas delivery portion to a second temperature different than the first temperature, wherein each of the first and second gas delivery portions (i) have a wedge shaped body that defines a plenum, (ii) are coplanar, and (iii) together form a showerhead having a circular shape.

Methods of using a segmented showerhead for uniform delivery of multiple pre-cursors

A method including receiving, by a processing device, a first selection of at least one of a first fabrication process or first manufacturing equipment to perform manufacturing operations of the first fabrication process. The method can further include inputting the first selection into a digital replica of the first manufacturing equipment wherein the digital replica outputs physical conditions of the first fabrication process. The method may further include determining environmental resource usage data indicative of a first environmental resource consumption of the first fabrication process run on the first manufacturing equipment based on the physical conditions of the first fabrication process. The processing device may further determine a modification to the first fabrication process that reduces the environmental resource consumption of the first fabrication process run on the first manufacturing equipment. The method can further include performing at least one of applying the modification to the first fabrication.

Embodiments of a showerhead are described herein. In some embodiments, a showerhead assembly includes: a first gas delivery portion having a first body, a first inlet, and a plurality of first tubes extending from the first body and defining a first plenum, wherein each tube of the plurality of first tubes includes a plurality of first holes; and a second gas delivery portion having a second body, a second inlet, and a plurality of second tubes extending from the second body and defining a second plenum fluidly independent from the first plenum, wherein each tube of the plurality of second tubes includes a plurality of second holes, and wherein the plurality of first tubes are disposed in an alternating pattern with the plurality of second tubes across a width of the showerhead assembly and a heat sink disposed between the plurality of first tubes and the plurality of second tubes.

Showerhead for providing multiple materials to a process chamber

Apparatus for supplying vaporized reactants to a reaction chamber are described herein. In some embodiments, a showerhead assembly for depositing multiple materials on a substrate includes a plurality of gas delivery portions, each gas delivery portion having an inlet, a wedge shaped body that defines a plenum, and a plurality of openings disposed on a bottom surface of the gas delivery portion, wherein each of the plenums are fluidly isolated from each other.

Segmented showerhead for uniform delivery of multiple precursors

Apparatus that forms low resistivity tungsten film on substrates. In some embodiments, the apparatus may provide reduced resistivity of tungsten by being configured to generate a plasma in a processing volume of a physical vapor deposition (PVD) chamber with a process gas of krypton and using an RF power with a frequency of approximately 60 MHz, apply bias power at frequency of approximately 13.56 MHz to a substrate, and sputter a tungsten target to deposit a tungsten thin film on the substrate. At least approximately 90% of the deposited tungsten thin film has a &#x3c;110&#x3e; crystalline orientation plane approximately parallel to a top surface of the substrate.

Apparatus for reducing tungsten resistivity

A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Deposition system with multi-cathode and method of manufacture thereof

Methods and systems for forming films on substrates in semiconductor processes are disclosed. The method includes providing different materials each contained in separate ampoules. Material is flowed from each ampoule into a separate portion of a showerhead contained within a process chamber via a heated gas line. From the showerhead, each material is flowed on to a substrate that sits on the surface of a rotating pedestal. Controlling the mass flow rate out of the showerhead and the rotation rate of the pedestal helps result in films with desirable material domain sizes to be deposited on the substrate.

Deposition chamber showerhead

Growing community of inventors

San Jose, CA, United States of America

Prashanth Kothnur