Intel Corporation

Prashant Wadhwa

Willy Rachmady

Jack T Kavalieros

Tahir Ghani

Gilbert W Dewey

Cheng-Ying Huang

Sudipto Naskar

Mohammad Hasan

Aravind S Killampalli

Jay P Gupta

Christopher Parker

Byungki Jung

Hsin-Fen Li

Jianqiang Lin

Caleb Barrett

Nishant Gupta

Kaiwen Hsu

Justin Railsback

Supanee Sukrittanon

A transistor includes a first channel layer over a second channel layer, an epitaxial source structure coupled to a first end of the first and second channel layers and an epitaxial drain structure coupled to a second end of the first and second channel layers. The transistor includes a gate between the epitaxial source structure and the epitaxial drain structure, where the gate is above the first channel layer and between the first channel layer and the second channel layer. The transistor includes a first spacer of a first material, between the first and second channel layers includes. The first spacer has at least one convex sidewall that is between the gate and the epitaxial source structure and between the gate and the epitaxial drain structure. The transistor also includes a second spacer of a second material having substantially vertical sidewalls above the first channel layer.

Localized spacer for nanowire transistors and methods of fabrication

Transistor structures including a non-planar body that has an active portion comprising a semiconductor material of a first height that is variable, and an inactive portion comprising an oxide of the semiconductor material of a second variable height, complementary to the first height. Gate electrodes and source/drain terminals may be coupled through a transistor channel having any width that varies according to the first height. Oxidation of a semiconductor material may be selectively catalyzed to convert a desired portion of a non-planar body into the oxide of the semiconductor material. Oxidation may be enhanced through the application of a catalyst, such as one comprising metal and oxygen, for example.

Transistor structures including a non-planar body having variable and complementary semiconductor and insulator portions

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Santa Clara, CA, United States of America

Prashant Wadhwa