Stmicroelectronics Pvt. Ltd.

Stmicroelectronics International N.v.

Synopsys, Inc.

Xilinx, Inc.

Stmicroelectronics Gmbh

Prashant Dubey

Akhil Garg

Jamil Kawa

Kaushik Saha

Navneet Gupta

Amit Khanuja

Sundeep Ram Gopal Agarwal

Sanjay Kumar Yadav

Kritika Aditya

Sravan Kumar Bhaskarani

Amit Kashyap

Shivangi Mittal

Ashish Kumar

Balwant Singh

Ishita Satishchandra Desai

Ruchir Saraswat

Vaibhav Verma

ShaileshKumar Pathak

R Sai Krishna

AtulKumar Kashyap

Shailesh Kumar Pathak

Raushan Kumar Jha

Gagandeep Singh Sachdev

Gaurav Ahuja

Surya Prakash Gupta

Guarav Ahuja

Examples of the present disclosure provide power gating for stacked die structures. In some examples, a stacked die structure comprises a first die and a second die bonded to the first die. In some examples, a power gated power path is from a bonding interface between the dies through TSVs in the second die, a power gating device in the second die, and routing of metallization layers in the second die to the circuit region in the second die. In some examples, a power gated power path comprises a power gating device in a power gating region of the first die and is configured to interrupt a flow of current through the power gated power path to a circuit region in the second die.

Power gating in stacked die structures

An SRAM architecture to optimize the performance of the SRAM. The local bit-lines are activated one at a time with control signals from a decoder. The global bit-lines are broken with repeaters to optimize performance. This guarantees optimal performance for the SRAM array across a wide range of supply voltages spanning from the nominal voltage of a process to a sub-threshold range.

Bit-line repeater insertion architecture

An SRAM bit-cell with independent write and read ports and an architecture utilizing a feedback loop from the read port to the write port of half-selected bit-cells. This guarantees absolute data retention of all SRAM bit-cells not fully selected for write operation across a wide range of supply voltage spanning from the nominal voltage of a process to a sub-threshold range.

Reset before write architecture and method

An SRAM cell in a bit interleaved memory architecture with two phase sequential write scheme to achieve 100% write ability and the SNM target with bit interleaved architecture in SRAM.

Read-write architecture for low voltage SRAMs

A data storage element comprises a master stage (MS) with a first and a second latch (LI, L), an error stage (ES) and a slave stage (SLS). The first latch (LI) generates in a clocked fashion based on a clock signal (CLK, CLKT, CLKB) a first logical signal (DOUT) based on an input signal (DATA) in relation to a first threshold level (TP). The second latch generates (L) in a clocked fashion based on the clock signal (CLK, CLKT, CLKB) a second logical signal (DOUT) based on the input signal (DATA) in relation to a second threshold level (TP). The second threshold level (TP) is distinct from the first threshold level (TP). The error stage provides an error signal (ER) with a first logical state if the first and the second logical signal (DOUT, DOUT) have the same logical state, and with a second logical state they have different logical states. The slave stage (SLS) sets an output value (Q) of the data storage element to a common logical state of the first and the second logical signal (DOUT, DOUT) when the error signal (ER) has the first logical state, and keeps the output value (Q) unchanged otherwise.

Data storage element and signal processing method

Embodiments relate to preventing or mitigating excessive drop in the negative voltage level of a bitline of memory bitcells by controlling the delay of a trigger signal for initiating injection of negative charge into the bitline. A write assist circuit causes negative charge to drop gradually in response to receiving a data input indicating a negative value of the bitline. When supply voltage is high, the timed delay of trigger signal is reduced, thereby causing negative charge to be injected into the bitline while bitline voltage remains at a higher voltage level and before the bitline voltage drops close to ground voltage. Since the negative charge is injected while the bitline voltage level is relatively high, the bitline is prevented from being pulled down to an excessively negative voltage level even when the supply voltage is relatively high.

Controlling timing of negative charge injection to generate reliable negative bitline voltage

An integrated circuit for generating a negative bitline voltage comprises a bitline connectable to a memory cell and a multitude of capacitors arranged in groups thereof connected to the bitline. A step signal generator can generate a consecutive sequence of step signals to be applied to a group of capacitors. The circuit may be part of an integrated memory circuit device to drive the bitline to a negative voltage to implement a write assist scheme.

Circuit for generating negative bitline voltage

An oscillator having a plurality of operatively coupled ring oscillators arranged in hyper-matrix architecture. The operatively coupled ring oscillators are either identical or non-identical and are coupled through a common inverter or tail current transistors. Due to the arrangement of the ring oscillators in a hyper-matrix structure, the ring oscillators are synchronized and resist any variation in frequency or phase thereby maintaining a consistent phase noise performance.

Matrix structure oscillator

An embodiment of a sense amplifier includes a sense circuit and a monitor circuit. The sense circuit is configured to convert a first signal that corresponds to data stored in a memory cell into a second signal that corresponds to the data, and the monitor circuit is configured to indicate a reliability of the second signal. The monitor circuit allows, for example, adjusting a parameter of a memory in which the memory cell is disposed to increase the read accuracy, and may also allow recognizing and correcting an error due to an invalid second signal.

Memory architecture and design methodology with adaptive read

A circuit including a first oscillator configured to oscillate at a first frequency; a second oscillator configured to oscillate at a second frequency, the second frequency being different from and one of a harmonic or sub-harmonic of the first frequency; and a coupling between the first oscillator and the second oscillator configured to injection lock at least one of the first oscillator and second oscillator to the other of the first oscillator and second oscillator.

Coupled ring oscillator

According to an embodiment, an apparatus includes: a first node configured to receive a data input signal of a data latch; a second node configured to receive a data output signal of the data latch; process and hold circuitry configured to process a difference between a value of the data input signal received at the first node and a value of the data output signal received at the second node and hold respective values at the first and second nodes responsive to the difference; and comparison circuitry configured to compare the value held at the first node and a value of the data output signal of the data latch; wherein the process and hold circuitry is configured to be biased toward the signal received at one of the first node and the second node.

Apparatus having error detection in sequential logic

A first sensing circuit has input terminals coupled to a true differential signal line and a complementary differential signal line. A second sensing circuit also has input terminals coupled to said true signal and said complementary signal. Each sensing circuit has a true signal sensing path and a complementary signal sensing path. The first sensing circuit has an imbalance that is biased towards the complementary signal sensing path, while the second sensing circuit has an imbalance that is biased towards the true signal sensing path. Outputs from the first and second sensing circuits are processed by a logic circuit producing an output signal that is indicative of whether there a sufficient differential signal for sensing has been developed between the true differential signal line and the complementary differential signal line.

Differential data sensing

A system and method of sharing testing components for multiple embedded memories and the memory system incorporating the same are disclosed. The memory system includes multiple test controllers, multiple interface devices, a main controller, and a serial interface. The main controller is used for initializing testing of each of the dissimilar memory groups using a serial interface and local test controllers. The memory system results in reduced routing congestion and faster testing of plurality of dissimilar memories. The present disclosure further provides a programmable shared built in self-testing (BIST) architecture utilizing globally asynchronous and locally synchronous (GALS) methodology for testing multiple memories. The built in self-test (BIST) architecture includes a programmable master controller, multiple memory wrappers, and an interface. The interface can be a globally asynchronous and locally synchronous (GALS) interface.

Locally synchronous shared BIST architecture for testing embedded memories with asynchronous interfaces

The system and method are for efficient detection and restoration of data storage array defects. The system may include a data storage subsystem, wherein the data storage subsystem includes a data storage array, read-write logic coupled to the data storage array, a parity generator for producing and storing check data during write operations to the data storage array and generating check data during read operations on the data storage array, and a parity checker for verifying the stored check data with generated check data and identifying defective data read-write elements during read operations on the data storage array. The subsystem may further include a Built-in Self Test (BIST) generator operating only on the identified defective data read-write elements for determining defective data storage elements in the defective data read-write elements, and a restoration mechanism for restoring the valid operation of data access elements containing the defective data storage elements in the data storage array.

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Greater Noida, India

Prashant Dubey