Corning Incorporated

Institucio Catalana De Recerca I Estudis Avancats

Fundacio Institut De Ciencies Fotoniques

Icfo—the Institute of Photonic Sciences

Icfo

Other

Industrial Technology Research Institute

Institució Catalana De Recerca I Estudis Avanats (icrea)

Icrea

The Institute of Photonic Sciences

Catalan Institution for Research and Advanced Studies

Prantik Mazumder

Robert Alan Bellman

Robert George Manley

Kaveh Adib

Theresa Chang

Valerio Pruneri

Dana Craig Bookbinder

Natesan Venkataraman

Glen Bennett Cook

Scott Christopher Pollard

Rajesh Vaddi

Wageesha Senaratne

Mark Alejandro Quesada

Jiangwei Feng

Jeffrey John Domey

Alan Thomas Stephens, Ii

Shiwen Liu

Shandon Dee Hart

Chandan Kumar Saha

Adra Smith Baca

Todd Parrish St Clair

Keith Leonard House

Benedict Yorke Johnson

Christopher Scott Thomas

David Eugene Baker

Vitor Marino Schneider

Guangli Hu

John Christopher Thomas

Eric John Mozdy

Darwin Gene Enicks

Joohyun Koh

Po Ki Yuen

Norman Henry Fontaine

Xinyuan Liu

Roy Joseph Bourcier

Bruce Gardiner Aitken

Steven Bruce Dawes

Charles Andrew Paulson

Mallanagouda D Patil

Shenping Li

John Forrest Wight, Jr

Chad Byron Moore

Susan Lee Schiefelbein

Paul Arthur Sachenik

Cheng-Chung Li

Mandakini Kanungo

Balram Suman

Kamal Kishore Soni

Ah-Young Park

Lili Tian

Chukwudi Azubuike Okoro

Pei-Lien Tseng

Philip Simon Brown

Indrani Bhattacharyya

Albert Carrilero

David Francis Dawson-Elli

Frederic Christian Wagner

Georgiy M Guryanov

Vasudha Ravichandran

Frederick E Noll

Andrew R Nadjadi

Jean-Philippe J De Sandro

Jhih-Wei Liang

Jen-Chieh Lin

Therese Francoise Arliguie

Carme Gomez Carbonell

Jeffrey Stapleton King

Ying Wei

Irene Mona Peterson

Wanda Janina Walczak

Amber Leigh Tremper

Jian-Zhi Jay Zhang

Ekaterina Aleksandrovna Kuksenkova

James Robert Lim

Tian Huang

Navaneetha Krishnan Subbaiyan

Bokyung Kong

Joy Banerjee

Miriam Marchena Martín-Francés

Ya-Huei Chang

Sergey Y Potapenko

Jun Ro Yoon

Byung Yun Joo

Sushmit Sunil Kumar Goyal

Yiu-Hsiang Chang

Hong-goo Choi

Dae Youn Kim

Elaine Victoria Seraya

Tonglai Chen

Miriam Marchena

John Forrest Wright, Jr

Johann Osmond

Daniel Florian Acquard

Daniel Martínez Cercós

Bruno Paulillo

Rinu Abraham Maniyara

Juan Rombaut

Julia Anne Dorothee Brueckner

An article including a support unit, the support unit including a support substrate and a bonding layer such that the bonding layer is bonded to a surface of the support substrate. Furthermore, a total thickness variation TTV across a width of the support unit is about 2.0 microns or less.

Substrate thinning process using temporary bond with low thickness variation

A method of forming a graphene device includes: providing a glass substrate with a blocking layer disposed thereon to form a stack; providing a first electrode and a second electrode; increasing the temperature of the stack to at least 100° C.; applying an external electric field (V) to the first electrode such that at least one metal ion of the glass substrate migrates toward the first electrode to create a depletion region in the glass substrate adjacent the second electrode; decreasing the temperature of the stack to room temperature while applying the external electric field to the first electrode; and after reaching room temperature, setting the external electric field to zero to create a frozen voltage region adjacent the second electrode.

Graphene doping by thermal poling

An article comprising: (i) a body, the body comprising a material and a transmittance greater than or equal to 90% throughout an electromagnetic radiation wavelength range of 250 nm to 800 nm; and (ii) cupric oxide (CuO) in direct contact with the material of the body, the cupric oxide (CuO) comprising a thickness that is less than or equal to 1.3 nm. Also disclosed is the article further comprising: an ultra-thin metal film disposed directly on the cupric oxide (CuO). The article demonstrates a transmittance greater than or equal to 65% throughout an electromagnetic radiation wavelength range of 300 nm to 1400 nm. The ultra-thin metal film can be silver (Ag), gold (Au), copper (Cu), or platinum (Pt). The ultra-thin metal film comprises a thickness within a range of 1 nm to 5 nm. The article at the ultra-thin metal film has a sheet resistance of less than or equal to 2100 Ω/□. Additionally, a method of forming the article.

Transparent article with a body and metal oxide disposed directly on the body, facilitating deposition of an electrically conductive and transparent ultra-thin metal film of a noble metal, and method of forming the same

Described herein are articles and methods of making articles, including a first sheet and a second sheet, wherein the thin sheet and carrier are bonded together using a coating layer, preferably a hydrocarbon polymer coating layer, and associated deposition methods and inert gas treatments that may be applied on either sheet, or both, to control van der Waals, hydrogen and covalent bonding between the sheets. The coating layer bonds the sheets together to prevent formation of a permanent bond at high temperature processing while at the same time maintaining a sufficient bond to prevent delamination during high temperature processing.

Methods for making controllably bonded sheets

A method for metallizing through-glass vias in a glass substrate includes functionalizing a surface of the glass substrate with a silane. The glass substrate has an average thickness t and comprises a plurality of vias extending through the thickness t. The method further includes applying an electroless plating solution comprising a copper ion to deposit a copper seed layer on the functionalized surface, disposing an electrolyte within the plurality of vias, wherein the electrolyte comprises copper ions to be deposited on the copper seed layer within the plurality of vias; positioning an electrode within the electrolyte; and applying a current between the electrode and the glass substrate, thereby reducing the copper ions into copper within the plurality of vias such that each of the plurality of vias is filled with copper and the copper has a void volume fraction of less than 5%.

Copper metallization for through-glass vias on thin glass

According to various embodiments described herein, an article comprises a glass or glass-ceramic substrate having a first major surface and a second major surface opposite the first major surface, and a via extending through the substrate from the first major surface to the second major surface over an axial length in an axial direction. The article further comprises a helium hermetic adhesion layer disposed on the interior surface; and a metal connector disposed within the via, wherein the metal connector is adhered to the helium hermetic adhesion layer. The metal connector coats the interior surface of the via along the axial length of the via to define a first cavity from the first major surface to a first cavity length, the metal connector comprising a coating thickness of less than 12 μm at the first major surface. Additionally, the metal connector coats the interior surface of the via along the axial length of the via to define a second cavity from the second major surface to a second cavity length, the metal connector comprising a coating thickness of less than 12 μm at the second major surface and fully fills the via between the first cavity and the second cavity.

Hermetic metallized via with improved reliability

Described herein are glass articles and methods of making glass articles, comprising a thin sheet and a carrier, wherein the thin sheet and carrier or bonded together using a coating layer, which is preferably an organosiloxane polymer coating layer, and associated deposition methods and inert gas treatments that may be applied on the thin sheet, the carrier, or both, to control van der Waals, hydrogen and covalent bonding between the thin sheet and the carrier. The coating layer bonds the thin sheet and carrier together to prevent a permanent bond at high temperature processing while at the same time maintaining a sufficient bond to prevent delamination during high temperature processing.

Siloxane plasma polymers for sheet bonding

A method of forming a functionalized device substrate is provided that includes the steps of: forming a conductive layer on a growth substrate; applying a polymeric layer to a device substrate, wherein a coupling agent couples the polymeric layer to the device substrate; coupling the polymeric layer to the conductive layer on the growth substrate; and peeling the growth substrate from the conductive layer.

Direct graphene transfer and graphene-based devices

Described herein are articles and methods of making articles, for example glass articles, comprising a thin sheet and a carrier, wherein the thin sheet and carrier are bonded together using a modification (coating) layer, for example a cationic polymer coating layer, and associated deposition methods, the carrier, or both, to control van der Waals, hydrogen and covalent bonding between the thin sheet and the carrier. The modification layer bonds the thin sheet and carrier together with sufficient bond strength to prevent delamination of the thin sheet and the carrier during high temperature (≤600° C.) processing while also preventing formation of a permanent bond between the sheets during such processing.

Temporary bonding using polycationic polymers

A method for fabricating a structured surface, includes: providing a transparent substrate; disposing a dewettable film over the substrate; annealing the dewettable film to form a plurality of islands; forming a coating over the plurality of islands; and etching the plurality of islands to form a structured array of surface features in the coating. A structured polymer and/or structured glass, includes: a structured array of surface features, such that the structured array of surface features has at least one dimension in a range of 0.5 nm to 5000 nm.

Anti-reflective transparent oleophobic surfaces and methods of manufacturing thereof

An article includes a carrier including a carrier bonding surface, a sheet including a sheet bonding surface, and a surface modification layer disposed on at least one of the carrier bonding surface and the sheet bonding surface. The surface modification layer includes a plasma polymerized material. The plasma polymerized material planarizes the at least one of the carrier bonding surface and the sheet bonding surface. The carrier bonding surface and the sheet bonding surface are bonded with the surface modification layer so that the carrier is temporarily bonded with the sheet. A method of making an article includes depositing a surface modification layer on at least one of a carrier bonding surface and a sheet bonding surface. The method further includes bonding the carrier bonding surface and the sheet bonding surface with the surface modification layer to temporarily bond the carrier with the sheet.

Methods and articles including a sheet and a carrier

A method is provided for manufacturing an article comprising a transparent conductive material, wherein a transparent conductive material (e.g., indium tin oxide) is deposited onto a substrate (e.g., fused silica) by physical vapor deposition, then annealed at high temperature (i.e., at least 450° C.) in a nitrogen atmosphere. The resulting article comprises a transparent conductive material that reduces the trade-off between low resistivity (or sheet resistance) and high near infrared transmission. For example, the transparent conductive material thus obtained may possess a transmission of at least 80% at 1550 nm while having a resistivity of less than or equal to about 5×10Ohm-cm and a Haacke figure of merit of at least about 40×10Ω. Also provided is a method for modulating the resistivity and/or the near infrared transmission of a transparent conductive material by annealing the transparent conductive material at a high temperature under nitrogen atmosphere.

Transparent conductor materials with enhanced near infrared properties and methods of forming thereof

A display backlight unit is disclosed including a glass substrate with a first major surface and a second major surface opposite the first major surface, the first major surface coated with at least one of 3-mercaptopropyl trimethoxysilane, aminopropyl triethoxysilane, or silanated PMMA, and a plurality of PMMA-containing light extraction dots deposited on the coated first major surface.

Method of treating a glass surface and treated glass articles

A method of modifying a deformable substrate that includes depositing a sessile liquid droplet on a first surface of a deformable substrate, the sessile liquid droplet forming a deformed region in the first surface of the deformable substrate, the deformed region having a recess and a perimeter rim, the recess extending toward a second surface of the deformable substrate, and the perimeter rim extending away from the second surface of the deformable substrate and curing the deformable substrate, thereby increasing an elastic modulus of the deformable substrate such that upon removal of the sessile liquid droplet, the deformed region remains in the first surface of the deformable substrate.

Methods of modifying a substrate by elastocapillary deformation

Provided herein are methods for forming one or more silicon nanostructures, such as silicon nanotubes, and a silica-containing glass substrate. As a result of the process used to prepare the silicon nanostructures, the silica-containing glass substrate comprises one or more nanopillars and the one or more silicon nanostructures extend from the nanopillars of the silica-containing glass substrate. The silicon nanostructures include nanotubes and optionally nanowires. A further aspect is a method for preparing silicon nanostructures on a silica-containing glass substrate. The method includes providing one or more metal nanoparticles on a silica-containing glass substrate and then performing reactive ion etching of the silica-containing glass substrate under conditions that are suitable for the formation of one or more silicon nanostructures.

Silicon and silica nanostructures and method of making silicon and silica nanostructures

Growing community of inventors

Ithaca, NY, United States of America

Prantik Mazumder