Fujitsu Corporation

Prafulla Masalkar

Hiroji Ebe

A first multi-quantum well structure is formed on a GaAs substrate . The first multi-quantum well structure is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. A second multi-quantum well structure is formed on the first multi-quantum well structure . The second multi-quantum well structure is formed of an AlGaAs barrier layer and a GaAs well layer alternately laid one on the other to form a multi-quantum well. The GaAs barrier layer is not doped with an impurity. Whereby a required electrode area can be smaller to thereby obtain higher detection sensitivity.

Photodetecting device

An infrared photodetector comprising of a photoabsorption layer formed on a substrate comprising of a multiquantum well structure, and a diffraction pattern formed over the photoabsorption layer. The diffraction pattern has recesses whose planar shape contains curves. Accordingly, the infrared photodetector can be formed by the fewer patterning steps and can detect the infrared radiation efficiently.

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Kawasaki, Japan

Prafulla Masalkar