Sarnoff Corporation

Sri International

Heraeus Noblelight America LLC

Consiglio Nazionale Delle Ricerche

Heraeus Noblelight Fusion Uv Inc.

Fusion Uv Systems, Inc.

Pradyumna Kumar Swain

Mahalingam Bhaskaran

Peter Alan Levine

Darrin Leonhardt

Charles H Wood

Mahmood Gharagozloo

Norman Goldsmith

Iginio Longo

Carlo Ferrari

Andrew David Paul Harbourne

Ta Hai Yeh

Arye Rosen

Taner Dosluoglu

Yongchi Tian

Nathaniel Joseph McCaffrey

Zilan Shen

John Robertson Tower

Aly Eid Fathy

Stewart Mark Perlow

David A Sprankle

Rui Zhu

Vipulkumar K Patel

William E Johnson, Iii

Gordon C Taylor

Yixin Yang

John W Clark

Michael Kenneth West

Travis Peter Steinmetz

David Xu

Levine Peter Alan

David Arthur Furst

David Jay Cheskis

Jia Ming Chen

William E Iii Johnson

Charles Hudson Wood

A system for powering a dual magnetron with a dual power supply is disclosed. A first power supply supplies a first voltage to a first magnetron. A second power supply supplies a second voltage to a second magnetron. A balancer circuit controls a drive current for altering a magnetic field of the first magnetron and a magnetic field of the second magnetron to maintain the first voltage and the second voltage at a substantially equal voltage.

System for powering dual magnetrons using a dual power supply

A metal container conveyor system is provided. The metal container conveyor system includes (i) a conveyor body for moving metal containers, and (ii) at least one diverter mechanism configured to change a width of a portion of the conveyor body.

Metal container conveyor systems including diverter mechanisms, and metal container processing systems including the same

A light-emitting source for curing applications is disclosed. The light-emitting source comprises a first housing having a top wall and one or more side walls. The top wall and the one or more side walls define a first enclosure having a first open end. The light-emitting source further comprises a plurality of light-emitting devices arranged within the first enclosure of the first housing. One side of each of the plurality of light-emitting devices faces outward from the first open end of the first enclosure. The plurality of light-emitting devices is configured to emit light from the first open end to produce a substantially uniform area of illumination on a facing portion of a surface of a target.

Large area high-uniformity UV source with many small emitters

An elongated light source envelope is disclosed. The elongated light source comprises an inner wall and an outer wall formed around a longitudinal axis. The inner wall and the outer wall may be connected at a first axial end by a first side wall and a second axial end by a second side wall. The inner wall, outer wall, the first side wall, and the second side wall define an enclosed space internal to the envelope. The light source envelope further comprises one or more walls formed between the inner wall and the outer wall to further form at least a first enclosed region and a second enclosed region within the enclosed space. The first enclosed region may be configured to emit a different spectrum of ultraviolet radiation from the second enclosed region in response to excitation of the first enclosed region and the second enclosed region by microwave radiation.

Multi-spectral electrodeless ultraviolet light source, lamp module, and lamp system

A method for fabricating a back-illuminated imager which has a pinned back surface is disclosed. A first insulator layer is formed overlying a mechanical substrate. A conductive layer is deposited overlying the first insulator layer. A second insulator layer is formed overlying the conductive layer to form a first structure, an interface being formed between the conductive layer and the second insulator layer, the conductive layer causing band bending proximal to the interface such that the interface is electrically pinned. Hydrogen is implanted in a separate device wafer to form a bubble layer. A final insulator layer is formed overlying the device wafer to form a second structure. The first structure and the second structure are bonded to form a combined wafer. A portion of the combined wafer is removed underlying the bubble layer to expose a seed layer comprising the semiconductor material substantially overlying the second insulator layer.

Method for electronically pinning a back surface of a back-illuminated imager fabricated on a UTSOI wafer

A system and method for powering a dual magnetron with a dual power supply is disclosed. A first power supply supplies a first voltage to a first magnetron. A second power supply supplies a second voltage to a second magnetron. A balancer circuit controls a drive current for altering a magnetic field of the first magnetron and a magnetic field of the second magnetron to maintain the first voltage and the second voltage at a substantially equal voltage.

System and method for powering dual magnetrons using a dual power supply

A UV lamp includes a UV lamp unit including a tubular bulb and an antenna inserted in the tubular bulb, and an antenna lead for supplying microwave energy from a microwave energy source to the UV lamp unit. The antenna lead includes a bent portion, one end of which is connected to the antenna and the other end is connectable to the microwave energy source.

UV lamp and a cavity-less UV lamp system

A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The device includes an insulator layer; a semiconductor substrate, having an interface with the insulator layer; an epitaxial layer grown on the semiconductor substrate by epitaxial growth; and one or more imaging components in the epitaxial layer in proximity to a face of the epitaxial layer, the face being opposite the interface of the semiconductor substrate and the insulator layer, the imaging components comprising junctions within the epitaxial layer; wherein the semiconductor substrate and the epitaxial layer exhibit a net doping concentration having a maximum value at a predetermined distance from the interface of the insulating layer and the semiconductor substrate and which decreases monotonically on both sides of the profile from the maximum value within a portion of the semiconductor substrate and the epitaxial layer. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a 'dead band' to prevent dark current carriers from penetrating to the front side of the device.

Dark current reduction in back-illuminated imaging sensors

An 'intelligent' UV curing assembly is disclosed. The 'intelligent' assembly permits automated monitoring of performance parameters, part lifetime, and inventory control of internal parts. The &#x201c;intelligent&#x201d; assembly includes an on lamp microprocessor. The on lamp microprocessor may be configured to recognize the internal parts, record accumulated working time of each part, and sample and process data from the plurality of &#x201c;intelligent&#x201d; sensors.

Intelligent UV radiation system

A back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The device includes an insulator layer, a semiconductor substrate having an interface with the insulator layer, an epitaxial layer grown on the semiconductor substrate; and one or more imaging components in the epitaxial layer. The semiconductor substrate and the epitaxial layer exhibit a net doping concentration profile having a maximum value at a predetermined distance from the interface which decreases monotonically on both sides of the profile. The doping profile between the interface with the insulation layer and the peak of the doping profile functions as a 'dead band' to prevent dark current carriers from penetrating to the front side of the device.

Methods of fabricating back-illuminated imaging sensors

A light source having a substantially elliptical cross-section for UV curing lamp assemblies is disclosed. The light source has a pair of end sections and a central section of smaller diameter than the end sections. The end sections are each connected to the central section by a tapered section the diameter of each of which decreases from an end that mates with an end section toward an end that mates with the central section. Each of the end sections has a substantially elliptical cross-section. The central section and the tapered sections may have a substantially elliptical cross-section. The aspect ratio of the elliptical cross-section of the end sections and the central section of the light source is preferably about 2:1.

Elliptical light source for ultraviolet (UV) curing lamp assemblies

An ultraviolet (UV) LED-based lamp for UV curing lamp assemblies is disclosed. An array of UV emitting LEDs are packaged together and arranged along the length of a cylindrical lens to form a UV LED-based optical component assembly. The UV LED-based optical component assembly may be made to be modular. A UV LED lamp assembly may comprise a plurality of UV LED-based optical component assemblies arranged around a workpiece tube. The workpiece tube may be filled with an inert gas and may be made of quartz or glass. One or more curved back reflectors may be placed opposite the LED UV LED-based optical component assemblies to collect UV light escaping the workpiece tube and refocus the light to the other side of the workpiece. The UV LEDs may be arranged on a single surface or a multi-level tiered platform.

UV LED based lamp for compact UV curing lamp assemblies

A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate is disclosed. The substrate includes an insulator layer and an epitaxial layer overlying the insulator layer. A bond pad region is formed extending into the epitaxial layer to a surface of the insulator layer. A bond pad is fabricated partially overlying the bond pad region. At least one imaging component is fabricated partially overlying and extending into the epitaxial layer. A passivation layer is fabricated overlying the epitaxial layer, the bond pad, and the at least one imaging component. A handle wafer is bonded to the passivation layer. A portion of the insulator layer and a portion of the bond pad region is etched to expose a portion of the bond pad.

Method of fabricating back-illuminated imaging sensors

A method and resulting device for reducing crosstalk in a back-illuminated imager is disclosed, comprising providing a substrate comprising an insulator layer and a seed layer substantially overlying the insulator layer, an interface being formed where the seed layer comes in contact with the insulator layer; forming an epitaxial layer substantially overlying the seed layer, the epitaxial layer defining plurality of pixel regions, each pixel region outlining a collection well for collecting charge carriers; and forming one of an electrical, optical, and electrical and optical barrier about the outlined collection well extending into the epitaxial layer to the interface between the seed layer and the insulator layer. The seed layer and the epitaxial layer of the device have a net dopant concentration profile which has an initial maximum value at the interface of the seed layer and the insulator layer and which decreases monotonically with increasing distance from an interface within an initial portion of the semiconductor substrate and the epitaxial layer.

Method and device for reducing crosstalk in back illuminated imagers

A method for fabricating a back-illuminated semiconductor imaging device on a semiconductor-on-insulator substrate, and resulting imaging device is disclosed. The method for manufacturing the imaging device includes the steps of providing a substrate comprising an insulator layer, and an epitaxial layer substantially overlying the insulator layer; fabricating at least one imaging component at least partially overlying and extending into the epitaxial layer; forming a plurality of bond pads substantially overlying the epitaxial layer; fabricating a dielectric layer substantially overlying the epitaxial layer and the at least one imaging component; providing a handle wafer; forming a plurality of conductive trenches in the handle wafer; forming a plurality of conductive bumps on a first surface of the handle wafer substantially underlying the conductive trenches; and bonding the plurality of conductive bumps to the plurality of bond pads.

Growing community of inventors

Princeton, NJ, United States of America

Pradyumna Kumar Swain