Lumileds Lighting U.s., LLC

Hewlett-packard Company

Philips Lumileds Lighting Company LLC

Pradeep Rajkomar

Michael Ragan Krames

Fred A Kish, Jr

Daniel Alexander Steigerwald

Jonathan J Wierer, Jr

Tun Sein Tan

William J Beecher

Fred A Kish

Tun S Tan

The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n&#x3e;1.8) superstrate.

III-nitride light-emitting device with increased light generating capability

The present invention is an inverted III-nitride light-emitting device (LED) with enhanced total light generating capability. A large area device has an n-electrode that interposes the p-electrode metallization to provide low series resistance. The p-electrode metallization is opaque, highly reflective, and provides excellent current spreading. The p-electrode at the peak emission wavelength of the LED active region absorbs less than 25% of incident light per pass. A submount may be used to provide electrical and thermal connection between the LED die and the package. The submount material may be Si to provide electronic functionality such as voltage-compliance limiting operation. The entire device, including the LED-submount interface, is designed for low thermal resistance to allow for high current density operation. Finally, the device may include a high-refractive-index (n>1.8) superstrate.

III-Nitride Light-emitting device with increased light generating capability

Method of making a III-nitride light-emitting device with increased light generating capability

A x-y array of light emitting diodes has insert molded leadframes to minimize manufacturing costs during assembly.

Bi-level injection molded leadframe

Growing community of inventors

San Jose, CA, United States of America

Pradeep Rajkomar