International Business Machines Corporation

Prabudhya Roy Chowdhury

Ruilong Xie

Sagarika Mukesh

Kisik Choi

Devika Sarkar Grant

Nikhil Jain

Liqiao Qin

A semiconductor structure is provided that includes a first FET device region including a plurality of first FETs, each first FET of the plurality of first FETs includes a first source/drain region located on each side of a functional gate structure. A second FET device region is stacked above the first FET device region and includes a plurality of second FETs, each second FET of the plurality of second FETs includes a second source/drain region located on each side of a functional gate structure. The structure further includes at least one first front side contact placeholder structure located adjacent to one of the first source/drain regions of at least one the first FETs, and at least one second front side contact placeholder structure located adjacent to at least one of the second source/drain regions of at one of the second FETs.

Stacked FETS with contact placeholder structures

According to the embodiment of the present invention, a semiconductor device includes a first source/drain and a second source/drain. A first source/drain contact includes a first portion and a second portion. The first portion of the first source/drain contact is located directly atop the first source/drain. The second portion of the first source/drain contact extends vertically past the first source/drain. The first source/drain is in direct contact with three different sides of a first section of the second portion of the first source/drain contact.

Via to backside power rail through active region

Provided is a semiconductor device. The semiconductor device comprises a transistor comprising a plurality of source/drain epitaxies. The semiconductor device further comprises at least one backside power rail under the transistor. The semiconductor device further comprises a backside inter-layer dielectric (ILD) located between the plurality of source/drain epitaxies and the at least one power rail. The semiconductor device further comprises a first backside contact connecting a first source/drain epitaxy to the at least one backside power rail. The semiconductor device further comprises one or more contact placeholders formed under the other source/drain epitaxies.

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Albany, NY, United States of America

Prabudhya Roy Chowdhury