Leonardo Electronics US Inc.

Lasertel Inc.

Prabhu Thiagarajan

Mark McElhinney

Devin Earl Crawford

Jason Helmrich

John J Cahill

Steven Smith

Jean Michel Maillard

Eric Paul Ruben

Feliks Lapinski

A laser diode apparatus has a first waveguide layer including a gain region connected in series with a second waveguide layer with a second gain region. A tunnel junction is positioned between the first and second guide layers. A single collimator is positioned in an output path of laser beams emitted from the first and second waveguide layers. The optical beam from the single collimator may be coupled into an optical fiber.

Dual junction fiber-coupled laser diode and related methods

A metal-core printed circuit board (MCPCB) and method of generating an ultra-narrow, high-current pulse driver with a MCPCB is provided. The MCPCB includes a rigid, metal heat sink layer and at least one electrically conductive top layer. At least one electrically insulating dielectric layer is positioned between the conductive top layer and rigid, metal heat sink layer, wherein the dielectric layer has a thickness of less than 0.007 inches.

Use of metal-core printed circuit board (PCB) for generation of ultra-narrow, high-current pulse driver

An epoxy-free laser assembly includes at least one laser array and at least one optics assembly positioned within an optical path of at least one laser array. The laser array and the optics assembly are epoxy-free. In one example, the optics assembly has a beam shaping optic and a wavelength stabilization optic, wherein the wavelength stabilization optic is connected to beam shaping optic with at least one tab and solder. In another example, a plurality of optics assemblies is included within the laser assembly, whereby the laser array and all of the plurality of optics assemblies fit within a footprint of the heatsink. Methods of manufacturing the same are also provided.

Laser assembly and related methods

A semiconductor apparatus with improved heat removal and improved heat flow to a heat sink is provided. The semiconductor apparatus includes a p-type semiconductor. An n-p tunnel junction is positioned within an epitaxial structure of the p-type semiconductor. A metal contact layer is connected to the n-p tunnel junction through an alloyed n-type contact interface. The n-p tunnel junction improves heat flow from the semiconductor through an alloyed contact interface formed between the tunnel junction and the metal contact layer which has lower thermal and electrical resistance in comparison to a conventional metallurgically abrupt interface of a p-type contact.

Thermal contact for semiconductors and related methods

A laser diode array having a plurality of diode bars bonded by a hard solder to expansion matched spacers and mounted on a gas or liquid cooled heatsink. The spacers are formed of a material such as copper/diamond composite material having a thermal expansion that closely matches that of the laser bars.

Liquid cooled laser bar arrays incorporating diamond/copper expansion matched materials

A laser diode array is formed on a heat sink having an insulating layer in which a plurality of grooves is formed through the ceramic layer and to or into the heat sink. A laser diode stack is soldered to the ceramic layer.

Growing community of inventors

Tucson, AZ, United States of America

Prabhu Thiagarajan