Samsung Electronics Co., Ltd.

Poren Tang

Seung Hun Lee

Hyun Jung Lee

Sunjung Kim

Moon Seung Yang

Bonyoung Koo

Gi Gwan Park

Dong Chan Suh

Jongryeol Yoo

Yong Suk Tak

Geun Hee Jeong

Mi Seon Park

A semiconductor device includes at least a first wire pattern, a gate electrode, a semiconductor pattern, a gate insulating layer, and a first spacer. The first wire pattern is on a substrate and isolated from the substrate. The gate electrode surrounds and intersects the first wire pattern. The semiconductor pattern is on both sides of the first wire pattern, and the semiconductor pattern includes a portion which overlaps the first wire pattern. The gate insulating layer is disposed between the gate electrode and the first wire pattern, and the gate insulating layer surrounds the first wire pattern. The first spacer is between the first wire pattern and the substrate, and the first spacer is between the gate insulating layer and the semiconductor pattern.

Semiconductor device and method of fabricating the same

Methods of fabricating semiconductor device are provided including forming first and second material layers for a first transistor using epitaxial growth processes. A recess region is formed by partially etching the first and second material layers. Third and fourth material layers for a second transistor are formed using epitaxial growth processes.

Methods of fabricating semiconductor devices including complementary metal oxide semiconductor transistors

A method of fabricating a semiconductor device includes forming a channel layer on a substrate, forming a sacrificial layer on the channel layer, forming a hardmask pattern on the sacrificial layer, and performing a patterning process using the hardmask pattern as an etch mask to form a channel portion with an exposed top surface. The channel and sacrificial layers may be formed of silicon germanium, and the sacrificial layer may have a germanium content higher than that of the channel layer.

Method of fabricating a semiconductor device

Growing community of inventors

Hwaseong-si, South Korea

Poren Tang