Sharp Laboratories of America, Inc

US Government As Represented by the Secretary of the Army

Sharp Laboratory of America, Inc.

Pooran Chandra Joshi

Apostolos T Voutsas

John Hartzell

Jiandong Huang

Paul John Schuele

Yoshi Ono

Hao Zhang

Masahiro Adachi

Tingkai Li

Melanie Will Cole

Sheng Teng Hsu

Louise C Sengupta

Vincenzo Casasanta, Iii

Bruce Dale Ulrich

Seshu B Desu

Somnath Sengupta

Wei Gao

Sasangan Ramanathan

Steven Stowell

Andrei L Gindilis

A solar call is provided along with a method for forming a semiconductor nanocrystalline silicon insulating thin-film with a tunable bandgap. The method provides a substrate and introduces a silicon (Si) source gas with at least one of the following source gases: germanium (Ge), oxygen, nitrogen, or carbon into a high density (HD) plasma-enhanced chemical vapor deposition (PECVD) process. A SiOxNyCz thin-film embedded with a nanocrystalline semiconductor material is deposited overlying the substrate, where x, y, z&#x2267;0, and the semiconductor material is Si, Ge, or a combination of Si and Ge. As a result, a bandgap is formed in the SiOxNyCz thin-film, in the range of about 1.9 to 3.0 electron volts (eV). Typically, the semiconductor nanoparticles have a size in a range of 1 to 20 nm.

Silicon oxide-nitride-carbide thin-film with embedded nanocrystalline semiconductor particles

A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for short wavelength luminescence applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including the element of N, O, or C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film has a peak photoluminescence (PL) at a wavelength in the range of 475 to 750 nanometers.

Fabrication of a semiconductor nanoparticle embedded insulating film luminescence device

A method of producing a precursor, active-matrix, fluid-assay micro-structure including the steps of (1) utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of non-functionalized pixels, and (2) preparing at least one of these pixels for individual, digitally-addressed (a) functionalization, and (b) reading out, ultimately, of completed assay results.

Method of making micro-pixelated fluid-assay precursor structure

A pixel-by-pixel, digitally-addressable, pixelated, precursor, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one non-functionalized, digitally-addressable assay sensor, and (b), disposed operatively adjacent this sensor, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the at least one assay sensor, an ambient electromagnetic field environment which is structured to assist in functionalizing, as a possession on said at least one assay sensor, at least one digitally-addressable assay site which will display an affinity for a selected fluid-assay material.

Micro-pixelated fluid-assay precursor structure

A digitally-addressable, pixelated, DNA fluid-assay, active-matrix micro-structure formed, utilizing low-temperature TFT and Si technology, on a substrate preferably made of glass or plastic, and including at least one pixel which is defined by (a) an addressable pixel site, (b) a sensor home structure disposed within that site for receiving and hosting a functionalized assay site possessing a DNA oligonucleotide probe, and (c) an addressable, pixel-site-specific, energy-field-producing functionalizer (preferably optical) operable to functionalize such a probe on the assay site. Each pixel may also include a pixel-integrated optical detector. Further disclosed are related methodology facets involving (1) the making of such a micro-structure (a) in a precursor form (without a functionalized probe), and thereafter (b) in a finalized/functionalized form (with such a probe), and (2) the ultimate use of a completed micro-structure in the performance of a DNA assay.

Micro-pixelated fluid-assay structure with on-board addressable, pixel-specific functionalization

A method for producing an active-matrix, fluid-assay micro-structure including, utilizing low-temperature TFT and Si technology, establishing preferably on a glass or plastic substrate a matrix array of digitally-addressable, assay-material-specific-functionalizable pixels, and employing pixel-specific digital addressing for selected, array-established pixels, individually functionalizing these pixels.

Method of making micro-pixelated fluid-assay structure

A method of performing a fluid-material assay employing a device including at least one active pixel having a sensor with an assay site functionalized for selected fluid-assay material. The method includes exposing the pixel's sensor assay site to such material, and in conjunction with such exposing, and employing the active nature of the pixel, remotely requesting from the pixel's sensor assay site an assay-result output report. The method further includes, in relation to the employing step, creating, relative to the sensor's assay site in the at least one pixel, a predetermined, pixel-specific electromagnetic field environment.

Micro-pixelated active-matrix fluid-assay performance

A pixel-by-pixel digitally-addressable, pixelated, fluid-assay, active-matrix micro-structure including plural pixels formed preferably on a glass or plastic substrate, wherein each pixel, formed utilizing low-temperature TFT and Si technology, includes (a) at least one functionalized, digitally-addressable assay sensor including at least one functionalized, digitally-addressable assay site which has been affinity-functionalized to respond to a selected, specific fluid-assay material, and (b) disposed operatively adjacent that sensor and its associated assay site, digitally-addressable and energizable electromagnetic field-creating structure which is selectively energizable to create, in the vicinity of the sensor and its associated assay site, a selected, ambient, electromagnetic field environment which is structured to assist, selectively and optionally only, in the reading-out of an assay-result response from the assay sensor and assay site.

Micro-pixelated fluid-assay structure

A method is provided for forming a silicon (Si) nanocrystal embedded Si oxide electroluminescence (EL) device with a mid-bandgap transition layer. The method provides a highly doped Si bottom electrode, and forms a mid-bandgap electrically insulating dielectric film overlying the electrode. A Si nanocrystal embedded SiOx film layer is formed overlying the mid-bandgap electrically insulating dielectric film, where X is less than 2, and a transparent top electrode overlies the Si nanocrystal embedded SiOx film layer. The bandgap of the mid-bandgap dielectric film is about half that of the bandgap of the Si nanocrystal embedded SiOx film. In one aspect, the Si nanocrystal embedded SiOx film has a bandgap (Eg) of about 10 electronvolts (eV) and mid-bandgap electrically insulating dielectric film has a bandgap of about 5 eV. By dividing the high-energy tunneling processes into two lower energy tunneling steps, potential damage due to high power hot electrons is reduced.

Method of forming silicon nanocrystal embedded silicon oxide electroluminescence device with a mid-bandgap transition layer

A method is provided for optical amplification using a silicon (Si) nanocrystal embedded silicon oxide (SiOx) waveguide. The method provides a Si nanocrystal embedded SiOx waveguide, where x is less than 2, having a quantum efficiency of greater than 10%. An optical input signal is supplied to the Si nanocrystal embedded SiOx waveguide, having a first power at a first wavelength in the range of 700 to 950 nm. The Si nanocrystal embedded SiOx waveguide is pumped with an optical source having a second power at a second wavelength in a range of 250 to 550 nm. As a result, an optical output signal having a third power is generated, greater than the first power, at the first wavelength. In one aspect, the third power increases in response to the length of the waveguide strip.

Optical waveguide amplifier using high quantum efficiency silicon nanocrystal embedded silicon oxide

A method is provided for fabricating a semiconductor nanoparticle embedded Si insulating film for electroluminescence (EL) applications. The method provides a bottom electrode, and deposits a semiconductor nanoparticle embedded Si insulating film, including an element selected from a group consisting of N and C, overlying the bottom electrode. After annealing, a semiconductor nanoparticle embedded Si insulating film is formed having an extinction coefficient (k) in a range of 0.01-1.0, as measured at about 632 nanometers (nm), and a current density (J) of greater than 1 Ampere per square centimeter (A/cm) at an applied electric field lower than 3 MV/cm. In another aspect, the annealed semiconductor nanoparticle embedded Si insulating film has an index of refraction (n) in a range of 1.8-3.0, as measured at 632 nm, with a current density of greater than 1 A/cmat an applied electric field lower than 3 MV/cm.

Fabrication of a semiconductor nanoparticle embedded insulating film electroluminescence device

Light emitting and waveguide devices with single-sided photonic bandgaps are provided. The light emitting device is formed from a heavily doped silicon (Si) bottom electrode, and a Si-containing dielectric layer embedded Si nanoparticles overlying the bottom electrode. A transparent indium tin oxide (ITO) top electrode overlies the Si-containing dielectric layer, and a photonic bandgap (PBG) Bragg reflector underlies the Si bottom electrode. The PBG Bragg reflector includes at least one periodic bi-layer of films with different refractive indexes. The single-sided photonic bandgap planar waveguide interface is formed from a planar waveguide and a PBG Bragg reflector underlying the planar waveguide.

Light emitting device and planar waveguide with single-sided periodically stacked interface

A light emitting device using a silicon (Si) nanocrystalline Si insulating film is presented with an associated fabrication method. The method provides a doped semiconductor or metal bottom electrode. Using a high density plasma-enhanced chemical vapor deposition (HDPECVD) process, a Si insulator film is deposited overlying the semiconductor electrode, having a thickness in a range of 30 to 200 nanometers (nm). For example, the film may be SiOx, where X is less than 2, SiNx, where X is less than 4, or SiCx, where X is less than 1. The Si insulating film is annealed, and as a result, Si nanocrystals are formed in the film. Then, a transparent metal electrode is formed overlying the Si insulator film. An annealed Si nanocrystalline SiOx film has a turn-on voltage of less than 20 volts, as defined with respect to a surface emission power of greater than 0.03 watt per square meter.

Method of forming a light emitting device with a nanocrystalline silicon embedded insulator film

An erbium (Er)-doped silicon (Si) nanocrystalline embedded silicon oxide (SiOx) waveguide and associated fabrication method are presented. The method provides a bottom layer, and forms an Er-doped Si nanocrystalline embedded SiOx film waveguide overlying the bottom layer, having a minimum optical attenuation at about 1540 nanometers (nm). Then, a top layer is formed overlying the Er-doped SiOx film. The Er-doped SiOx film is formed by depositing a silicon rich silicon oxide (SRSO) film using a high density plasma chemical vapor deposition (HDPCVD) process and annealing the SRSO film. After implanting Erions, the Er-doped SiOx film is annealed again. The Er-doped Si nanocrystalline SiOx film includes has a first refractive index (n) in the range of 1.46 to 2.30. The top and bottom layers have a second refractive index, less than the first refractive index.

Erbium-doped silicon nanocrystalline embedded silicon oxide waveguide

A method is provided for fabricating a high quantum efficiency silicon (Si) nanoparticle embedded SiONfilm for luminescence (electroluminescence&#x2014;EL and photoluminescence&#x2014;PL) applications. The method provides a bottom electrode, and deposits a Si nanoparticle embedded non-stoichiometric SiONfilm, where (X+Y&#x3c;2 and Y&#x3e;0), overlying the bottom electrode. The Si nanoparticle embedded SiONfilm is annealed. The annealed Si nanoparticle embedded SiONfilm has an extinction coefficient (k) of less than about 0.001 as measured at 632 nanometers (nm), and a PL quantum efficiency (PLQE) of greater than 20%.

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Vancouver, WA, United States of America

Pooran Chandra Joshi