Nexperia B.v.

Nxp B.v.

Pompeo V Umali

Chi Ho Leung

Shun Tik Yeung

Kan Wae Lam

Chi Ling Shum

Tim Boettcher

Hans-Juergen Funke

Wai Wong Chow

Haibo Fan

Soenke Habenicht

Wolfgang Schnitt

Zhihao Pan

Sven Walczyk

Wai Hung William Hor

Harrie Martinus Maria Horstink

Wai (Kan Wae) Lam

WaiKeung Ho

Yee Wai Fung

Martin Ka Shing Li

Max Leung

Leung Chi Ho

Thierry Jans

Shu-Ming Yip

A semiconductor device structure and method of manufacturing a semiconductor device. The semiconductor device may comprise a semiconductor die having a top major surface that has one or more electrical contacts formed thereon, an opposing bottom major surface, and side surfaces; a molding material encapsulating the top major surface, the bottom major surface and the side surfaces of the semiconductor die, wherein the molding material defines a package body that has a top surface and a side surface; wherein the plurality of electrical contacts are exposed on the top surface of the package body and a metal layer is arranged over and electrically connected to the electrical contacts and wherein the metal layer extends to and at least partially covers a side surface of the package body.

Semiconductor device and method of manufacture

Various example embodiments concern an integrated circuit (IC) package having a clip with a protruding tough-shaped finger portion. The clip can be used in various IC packages including, for example, soft-soldered compact power packages such as rectifiers with specified surge current capability. Such embodiments can be implemented to allow for a visual inspection capability of the soldering area for connecting a lead frame, via the clip, to a surface of the IC package die, while still providing sufficient thermal mass to limit the temperature increase during forward surge current loads. This results in a simple to manufacture design without compromising too much on performance.

Semiconductor device and method with clip arrangement in IC package

An electronic device including a die and at least one lead. The electronic device further includes a corresponding at least one connector, each connector for connecting the die to a corresponding lead or leads, and each connector having a first end disposed in bondable proximity to a complementary surface of the corresponding lead and a second end disposed in bondable proximity to a complementary surface of the die. An end portion of at least one of the first end and second end has a formation, the formation in combination with the complementary surface of one, or both, of the respective lead or the die defining therebetween a first region and at least a second region configured to attract by capillary action an electrically conductive bonding material to consolidate therein.

Electronic device

A semiconductor device and a method of making the same. The device includes an electrically conductive heat sink having a first surface. The device also includes a semiconductor substrate. The device further includes a first contact located on a first surface of the substrate. The device also includes a second contact located on a second surface of the substrate. The first surface of the substrate is mounted on the first surface of the heat sink for electrical and thermal conduction between the heat sink and the substrate via the first contact. The second surface of the substrate is mountable on a surface of a carrier.

Semiconductor device

A semiconductor device includes a semiconductor die having a top surface that has one or more electrical contacts formed thereon, and an opposite bottom surface. A molding material encapsulates the top surface and at least a part of a side surface of the semiconductor die. The molding material defines a package body that has a top surface and a side surface. Openings are formed on the top surface of the package body, and the electrical contacts are partially exposed from the molding material through the openings. A metal layer is formed over and electrically connected to the electrical contacts through the openings. The metal layer extends to and at least partially covers the side surface of the package body.

Wafer level semiconductor device with wettable flanks

An electronic device has a first surface, a second surface opposite to the first surface, and sidewalls located between and adjoining the first and second surfaces. The electronic device includes contact pads on the first surface. The contact pads extend from the first surface to adjoining sidewalls, and abut the sidewalls.

Electronic device and method of making same

A semiconductor die has internal circuitry formed on two more internal layers, and die bonding pads arranged on a top surface of the die. The bonding pads are connected to the internal circuitry for providing input and output signals to the internal circuitry. One or more connecting lines electrically connect one or more pairs of the die bonding pads, thereby defining a bonding pad layout. The die bonding pads are arranged and connected with the connecting lines such that the bonding pad layout is reversible, which allows the die to be used in different package types (e.g., TSSOP or DFN) yet maintain a standardized pin arrangement without the necessity for long or crossed bond wires.

Reversible semiconductor die

A semiconductor device includes a semiconductor die having a first side having a first terminal and an opposite second side having at least two second terminals. A lead frame has a first part and a second part. The second part of the lead frame is both electrically and mechanically spaced from the first part. The second side of the die is attached to the lead frame such that the first and second lead frame parts are respectively connected to the at least two second terminals. The first and second lead frame parts include respective first and second extensions that project past a side of the die and provide first and second terminal surfaces that are co-planar with the first terminal on the first side of the die. The device makes use of the terminals on the both sides of the die. The device second side is exposed for thermal performance.

Semiconductor device and lead frame therefor

A semiconductor device and a method of making the same. The device includes a semiconductor substrate having a major surface, one or more contacts located on the major surface and an encapsulant covering at least the major surface. A peripheral edge of each contact defines a contact area on the major surface. The device also includes one or more bond pads located outside the encapsulant. Each bond pad is electrically connected to a respective contact located on the major surface of the substrate by a respective metal filled via that passes through the encapsulant. A sidewall of each respective metal filled via, at the point at which it meets the respective contact, falls inside the contact area defined by the respective contact when viewed from above the major surface of the substrate, whereby none of the metal filling each respective via extends outside the contact area of each respective contact.

Semiconductor device and method of making a semiconductor device

Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry. The semiconductor device includes a built-up substrate lead frame having, a sub-structure of I/O terminals and a die attach area, the I/O terminals and die attach area enveloped in a molding compound, the die attach area having exposed areas to facilitate device die attachment thereon and the terminal I/O terminals providing connection to the device die bond pads; connection traces electrically couple the I/O terminals with one another, said connection traces having facilitated electroplating of exposed vertical surfaces of the I/O terminals during assembly, said connection traces being severed after assembly. An envelope of molding compound encapsulates the device die onto the built-up substrate lead frame.

Built-up lead frame package and method of making thereof

Consistent with an example embodiment, there is leadless packaged semiconductor device having top and bottom opposing major surfaces and sidewalls extending there between. The leadless packaged semiconductor device comprises a lead frame sub-assembly having an array of two or more lead frame portions each having a semiconductor die arranged thereon. There are at least five I/O terminals wherein each of said terminals comprise a respective metal side pad wherein the respective metal side pad is disposed in a recess. A feature of this embodiment is that the each of the side pads is electroplated. The electroplated side pads accept solder and the solder menisci are contained by the recesses.

Package with multiple I/O side-solderable terminals

Consistent with an example embodiment, a semiconductor device comprises a device die having bond pads providing connection to device die circuitry. The semiconductor device includes a QFN package (quad-flat-pack no-leads) built-up substrate lead frame having, a sub-structure of I/O terminals and a die attach area, the I/O terminals and die attach area enveloped in a molding compound; the die attach area has exposed areas to facilitate device die attachment thereon and the terminal I/O terminals provide connection to the device die bond pads. I/O terminals are electrically coupled with one another and to the die attach area with connection traces. The coupled I/O terminals and connection traces facilitate electroplating of exposed vertical surfaces of the I/O terminals during assembly, said connection traces being severed after assembly. Molding compound encapsulates the device die on the built-up substrate lead frame. The exposed vertical surfaces of the I/O terminals enhance the solderability of the assembled QFN device during placement onto a printed circuit board.

Built-up lead frame QFN and DFN packages and method of making thereof

A method of dividing a two dimensional array of encapsulated integrated circuits into individual integrated circuit packages uses a first series of parallel cuts () extending fully through the leadframe () and encapsulation layer (), and defining rows of the array. The cuts terminate before the beginning and end of the rows such that the integrity of the array is maintained by edge portions () at the ends of the rows. After plating contact pads (), a second series of parallel cuts () is made extending fully through the leadframe () and encapsulation layer (). This separates the array into columns thereby providing singulation of packages between the edge portions ().

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Hong Kong, China

Pompeo V Umali