Taiwan Semiconductor Manufacturing Comp. Ltd.

Pohan Kung

Ching-Hwanq Su

Ru-Shang Hsiao

I-Shan Huang

Ying Hsin Lu

Shiu-Ko JangJian

Chi-Cheng Hung

Hsien-Ming Lee

Yu-Sheng Wang

Hsiao-Kuan Wei

Jui-Fen Chien

Chih-Hsiang Fan

Ying-Jing Lu

A semiconductor device includes a channel component of a transistor and a gate component disposed over the channel component. The gate component includes: a dielectric layer, a first work function metal layer disposed over the dielectric layer, a fill-metal layer disposed over the first work function metal layer, and a second work function metal layer disposed over the fill-metal layer.

Structure for metal gate electrode and method of fabrication

A method of manufacturing a semiconductor device includes: providing a substrate; forming a gate structure on the substrate; depositing a first dielectric layer over the gate structure; depositing a conductive interconnect in a trench of the first dielectric layer thereby exposing a surface of the conductive interconnect through the first dielectric layer; depositing a conductive layer over the exposed surface of the conductive interconnect; depositing a silicon-containing layer over the conductive layer and the conductive interconnect; and forming a metal silicide layer to be a silicide form of the conductive layer by reacting the conductive layer with silicon in the silicon-containing layer.

Semiconductor device and manufacturing process thereof

Methods of fabricating semiconductor devices are provided. The method includes forming a gate dielectric layer over a substrate. The method also includes depositing a first p-type work function tuning layer over the gate dielectric layer using a first atomic layer deposition (ALD) process with an inorganic precursor. The method further includes forming a second p-type work function tuning layer on the first p-type work function tuning layer using a second atomic layer deposition (ALD) process with an organic precursor. In addition, the method includes forming an n-type work function metal layer over the second p-type work function tuning layer.

Methods of fabricating semiconductor devices with metal-gate work-function tuning layers

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Tainan, Taiwan

Pohan Kung