Taiwan Semiconductor Manufacturing Comp. Ltd.

Po-Zeng Kang

Yung-Chow Peng

Wen-Shen Chou

Chung-Hui Chen

Jaw-Juinn Horng

Chih-Hsien Chang

Chien-Hung Zordius Chen

Szu-Lin Liu

Yu-Tao Yang

Wan-Te Chen

Yung-Hsu Chuang

Young-Chow Peng

Ruey-Bin Sheen

Chung-Peng Hsieh

Ming-Cheng Syu

Shu-Chin Tai

A semiconductor device includes a hysteresis block configured to generate an output voltage at corresponding disabling enabling voltage levels and a core-voltage-gated (CVG) device configured to receive a core voltage, an input terminal of the hysteresis block is coupled to a control node. The CVG device is configured to alter a control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated in response to the core voltage either at the disabling voltage level or at the enabling voltage level.

Power on control circuits and methods of operating the same

A semiconductor device includes a plurality of active area structures extending in parallel, first and second dummy gate layers spanning the plurality of active area structures, a first active device including first portions of the plurality of active area structures between the first and second dummy gate layers, a metal layer spanning the plurality of active area structures between the first and second dummy gate layers, and a pair of vias positioned at opposite ends of the metal layer. A first via of the pair of vias is configured to be electrically connected to ground, and a second via of the pair of vias is configured to be electrically connected to a current source and a circuit configured to measure a voltage at the node.

Temperature monitoring device and method

A semiconductor device includes a plurality of transistors, a plurality of metal layers, and a resistor. The plurality of transistors are connected in series between a power terminal and a ground terminal, and gate terminals of the transistors being connected together. The plurality of metal layers are overlaid above the plurality of transistors. The resistor is implemented between two of the plurality of metal layers.

Semiconductor device with source resistor

A method of manufacturing a semiconductor device includes forming M_1st segments in a first metallization layer including: forming first and second M_1st segments for which corresponding long axes extend in a first direction and are substantially collinear, the first and second M_1st segments being free from another instance of M_1st segment being between the first and second M_1st segments; and (A) where the first and second M_1st segments are designated for corresponding voltage values having a difference equal to or less than a reference value, separating the first and second M_1st segments by a first gap; or (B) where the first and second M_1st segments are designated for corresponding voltage values having a difference greater than the reference value, separating the first and second M_1st segments by a second gap, a second size of the second gap being greater than a first size of the first gap.

High voltage guard ring semiconductor device and method of forming same

An IC device includes a transistor including a gate structure between first and second active areas, a first S/D metal portion overlying the first active area, and a second S/D metal portion overlying the second active area. A load resistor including a third S/D metal portion is positioned on a dielectric layer and in a same layer as the first and second S/D metal portions. A first via overlies the first S/D metal portion, second and third vias overlie the third S/D metal portion, and a first conductive structure is configured to electrically connect the first via to the second via.

Integrated circuit device, method, layout, and system

A semiconductor device includes a plurality of active area structures. One or more active devices include portions of the plurality of active area structures. A metal layer is formed on the plurality of active area structures and separated from the one or more active devices by one or more dummy gate layers. The metal layer is configured to measure, due to a change of resistance in the metal layer, a temperature of the plurality of active area structures.

Device for temperature monitoring of a semiconductor device

A semiconductor device includes a hysteresis block configured to generate an output voltage at corresponding disabling enabling voltage levels and a core-voltage-gated (CVG) device configured to receive a core voltage, an input terminal of the hysteresis block is coupled to a control node. The CVG device is configured to alter a control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the disabling voltage level in response to the core voltage being at or below a first trigger level. Additionally, the CVG device is configured to alter the control voltage at the control node so as to cause the output voltage of the hysteresis block to be generated at the enabling voltage level in response to the core voltage being at or above a second trigger level, the second trigger level being above the first trigger level.

A semiconductor device includes transistors and a resistor. The transistors are connected in series between a power terminal and a ground terminal, and gate terminals of the transistors being connected together. The resistor is overlaid above the transistors. The resistor is connected between a source terminal of the transistors and the ground terminal.

Semiconductor device with source resistor and manufacturing method thereof

Device and method for temperature monitoring of a semiconductor device

The present disclosure describes a method for replacing a device with a cell structure having a plurality of uni-gates. An exemplary method includes receiving a circuit diagram that includes the device, determining the cell structure wherein a cumulative effective gate length of the plurality of uni-gates is equal to a gate length of the device, generating, based on the cell structure and the device, a floor plan that includes an arrangement of a plurality of placeholders that match an arrangement of the cell structure and an arrangement of the device in the circuit diagram, and generating a circuit layout based on the floor plan, the cell structure, and the circuit diagram. The plurality of placeholders is replaced by the cell structure and the cell structure is connectable to other parts of the circuit diagram based on the circuit diagram.

Uni-gate cell design

An IC degradation sensor is disclosed. The IC degradation management sensor includes an odd number of first logic gates electrically connected in a ring oscillator configuration, each first logic gate having an input and an output. Each first logic gate further includes a first PMOS transistor, a first NMOS transistor and a second logic gate having an input and an output. The input of the second logic gate is the input of the first logic gate, and the drains of the first PMOS transistor and the first NMOS transistor are electrically connected to the output of the second logic gate, and the output of the second logic gate is the output of the first logic gate.

IC degradation management circuit, system and method

An integrated circuit (IC) includes a first transistor having a first dopant type and a second transistor having a second dopant type opposite to the first dopant type. The first transistor includes a first terminal configured to receive a current, a second terminal connected to a node, and a first gate, and the second transistor includes a first terminal connected to a device under test (DUT), a second terminal connected to the node, and a second gate. Each one of the first gate, the node, or the second gate is capable of receiving a first voltage from a first voltage source simultaneously with another one of the first gate, the node, or the second gate receiving a second voltage from a second voltage source, the first voltage being different from the second voltage.

Output resistance testing integrated circuit

A device comprising a device under test and a time to current converter configured to be coupled to the device under test. The device under test comprises: (i) at least one delay element for creating a delay; (ii) at least one capacitor for providing capacitance loading to the at least one delay element; and (iii) at least one switch to control the capacitance loading provided by the at least one capacitor. The time to current converter comprises (i) a first input for receiving a first clock signal; (ii) a second input for receiving an inverted and delayed version of the first clock signal from the device under test; and (iii) an impedance module for measuring an output current. During a testing mode, the at least one switch is in a closed position so the at least one capacitor can provide a capacitance loading to the at least one delay element to amplify the delay associated with the device under test.

Growing community of inventors

Hsin-Hua, Taiwan

Po-Zeng Kang