National Yang Ming Chiao Tung University

United Microelectronics Corp.

Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Au Optronics Corporation

Chunghwa Picture Tubes, Ltd.

Giantplus Technology Co., Ltd

Other

National Sun Yat-sen University of Kaohsiung

Quanta Display Inc.

Microcosm Technology Co., Ltd

Po-Tsun Liu

Ting-Chang Chang

Yi-Shien Mor

Li-Feng Teng

Yang-Shun Fan

Guang-Ting Zheng

Li-Wei Chu

Han-Ping D Shieh

Yu-Cheng Chen

Chi-Wen Chen

Chi-Lin Chen

Wen-Chuan Wang

Wei-Lien Sung

Yi-Teh Chou

Ku-Huang Lai

Han-Lung Liu

Hsing-Hua Wu

Yi-Chun Kuo

Zhen-Hao Li

Chun-Ching Chen

Chen-Shuo Huang

Chun-Yen Chen

Tsung-Che Chiang

Yu-Ming Lin

Chi-Wen Liu

Meng-Han Lin

Water Lur

Ming-Dou Ker

Bo-Feng Young

Ying-Lang Wang

Wei-Ting Lin

Yuan-Hao Chang

Kuo-Yu Huang

Po-Lun Chen

Ya-Hsiang Tai

Jiun-Jye Chang

Shih-Chieh Lin

Tsung-Ming Tsai

Sai-hooi Yeong

Hung-Wei Li

Che-Yao Wu

Jeng-Tzong Sheu

Chih-Chieh Hsu

Kai-Ju Chou

Bo-Hung Lai

Wen-Che Wang

Chi-Chao Wan

Simon M Sze

Shao-Lun Chang

Chi-Liang Kuo

Jen-Chien Peng

Po-Chun Huang

Yun-chu Tsai

Ming-Chin Hung

Po-Yi Kuo

Chur-Shyang Fu

Min-Sheng Chu

Yung-Yun Wang

Shuo-Ting Yan

Shrane-Ning Jenq

Simon-M Sze

Yu-Fan Tu

Kai-Jhih Gan

Sung-Wei Hung

Hsin-Yi Huang

Shao-Huan Hung

Yuan-Jou Lo

Yao-Jen Lee

Wei-Ya Wang

Min-Yen Tsai

Ching-Hui Hsu

Fu-Hai Li

Chun-Ching Hsiao

Yi-Ling Huang

Szu-Lin Cheng

Yoshio Nishi

A thin-film transistor includes a substrate, a first thin-film structure, a gate structure, and a second thin-film structure that are sequentially disposed on one another. The first thin-film structure includes a channel layer, and first source and drain layers disposed at opposite sides of the channel layer. The gate structure includes a common gate electrode disposed on the channel layer, and a gate insulating layer wrapping the common gate electrode and covering the first thin-film structure. The second thin-film structure includes an active layer disposed on the gate insulating layer and including an indium oxide-based material, and second source and drain layers disposed at opposite sides of the active layer.

Thin-film transistor device

A transistor includes a first semiconductor layer, a second semiconductor layer, a semiconductor nanosheet, a gate electrode and source and drain electrodes. The semiconductor nanosheet is physically connected to the first semiconductor layer and the second semiconductor layer. The gate electrode wraps around the semiconductor nanosheet. The source and drain electrodes are disposed at opposite sides of the gate electrode. The first semiconductor layer surrounds the source electrode, the second semiconductor layer surrounds the drain electrode, and the semiconductor nanosheet is disposed between the source and drain electrodes.

Transistor, memory device and manufacturing method of memory device

A method for manufacturing a conductive bridging memory device includes the following steps. First, a bottom electrode is formed on a substrate. Next, a switching layer is formed on the bottom electrode. The switching layer is made of a semiconducting metal oxide and free of gallium. Then, a surface of the switching layer is subjected to an oxygen plasma surface treatment. Afterwards, a blocking layer including a conductive material is formed on the treated surface of the switching layer, and an upper electrode is formed on the blocking layer.

Method for manufacturing a conductive bridging memory device

The present invention provides a temperature sensing circuit, which comprises a switching circuit, a charging circuit, and a judging circuit. The switching circuit receives a supply voltage for generating a switching signal. The charging circuit is coupled to the switching circuit and receives the supply voltage. The switching signal controls the charging circuit for generating a voltage signal according to the supply voltage. The judging circuit is coupled to the charging circuit for generating a judging signal according to the level of the voltage signal. The levels of the switching signal and the voltage signal are related to a temperature state; and the judging signal represents the temperature state. The temperature sensing circuit can be applied to the driving circuit of a display panel for detecting the temperature state. Hence, the level of the driving signal of the driving circuit can be adjusted for improving the image quality.

Temperature sensing circuit and driving circuit

A gate driving circuit is provided. The gate driving circuit includes multistage driving modules, where an Nstage driving module includes a setting circuit, a first driving circuit, an isolating switch circuit, a second driving circuit and an anti-noise circuit. The setting circuit generates a first precharge signal according to a gate driving signal of an (N&#x2212;2)scan line or a start signal. The isolating switch circuit coupled between the first driving circuit and the second driving circuit provides a second precharge signal, so as to effectively avoid a flickering problem of a display image caused by a surge of the gate driving signal due to a coupling effect of a parasitic capacitance of the transistor and a bootstrap capacitor, and meanwhile the bootstrap capacitor is not used, so as to effectively reduce a bezel area.

Gate driving circuit with isolating switch for display device using the same

A laminate structure of a thin film transistor includes a thin film transistor array and a passivation layer. The thin film transistor array includes a gate, a channel layer formed on the gate, a gate insulating layer formed between the gate and the channel layer, and a source and a drain formed on both sides of the channel layer. The passivation layer is formed on the thin film transistor array, and the passivation layer has at least one contact hole exposing the source or the drain, wherein the passivation layer is an oxazole-containing photosensitive polyimide (PSPI) resin.

Laminate structure of thin film transistor

A display panel includes a substrate, and a pixel array and a gate driving circuit. The gate driving circuit provides gate driving signals to the pixel array, and includes shift registers, wherein each shift register includes a voltage providing unit, a first driving transistor, a voltage transmitting unit and a second driving transistor. The voltage providing unit receives a setting signal and a system high voltage to provide a first terminal voltage. The first driving transistor receives a first clock signal and the first terminal voltage to provide a first gate driving signal. The voltage transmitting unit receives the first gate driving signal to provide a second terminal voltage. The second driving transistor receives a second clock signal and the second terminal voltage to provide a second gate driving signal. Therefore, the influence caused by large difference of driving capabilities of the first and the second driving transistor is avoided.

Display panel

A memory structure includes a control unit and a memory unit electrically connected to the control unit. The control unit includes a source and a drain; an active layer in contact with a portion of the source and a portion of the drain; a gate layer; and a gate insulation layer disposed between the active layer and the gate layer. The memory unit includes a bottom electrode layer; a top electrode layer; and a resistive switching layer interposed between the bottom electrode layer and the top electrode layer, which the resistive switching layer and the active layer are formed of aluminum zinc tin oxide (AZTO).

Memory structure and preparation method thereof

The present invention provides an analog memory cell circuit for the LTPS TFT-LCD. The circuit comprises the first transistor, second transistor, the third transistor, the fourth transistor, the fifth transistor, the sixth transistor, the seventh transistor, and the capacitor. It comprises a plurality of operation period, wherein the transistors are controlled in accordance with the first scan signal, the second scan signal, and the third scan signal, the output signal is output in the opposite to the output jack.

Analog memory cell circuit for the LTPS TFT-LCD

A method for fabricating a semiconductor device is disclosed in the present invention. The abovementioned method comprises the following steps. Firstly, a gate is formed on a substrate. A gate insulating layer is then formed on the gate, and further an active layer is disposed on the gate insulating layer, wherein the active layer is composed of a microwave absorbing material. Source/drain is defined on the active layer to form the semiconductor device, and a microwave annealing process is finally performed thereon.

Method for fabricating semiconductor device

The present invention provides a method of manufacturing a semiconductor device. The method at least comprises the following steps. First, the semiconductor device, which comprises a gate, a gate dielectric layer, an active layer, a source and a drain, is manufactured. However, the semiconductor device has a plurality of defects, and the active layer is a metal oxide thin film. After annealing the semiconductor device, it will be transferred into a chamber. A final step of injecting a supercritical fluid carried with a co-solvent into the chamber is then performed to modify the abovementioned defects.

Method of manufacturing semiconductor device

A thin film transistor comprises a transparent substrate, a gate is disposed on the transparent substrate, a gate insulator is disposed on the gate and the transparent substrate, an active layer is disposed on the gate insulator, an electrode layer is electrically connected the active layer and the portion of the active layer is exposed, and an ultraviolet light absorbing layer is disposed on the electrode layer. By using the advantage of the ultraviolet light absorbing layer with the range of visible light transmittance and with the component protection, preventing the optical characteristics of the thin film transistor from the outside moisture is achieved, and by adjusting the parameters in the thin film deposition process to change its conductivity.

Thin film transistor with UV light absorber layer

The invention provides a bidirectional scanning driving circuit, which comprises N stages of driving modules. Driving module comprises an output unit, a forward input unit, and a reverse input unit. For the n-th stage driving module, the forward input unit receives a first input voltage and a front forward scan signal of any of the driving modules lower than or equal to (n&#x2212;2)th stage for charging or discharging a control node of the output unit. The reverse input unit receives a second input voltage and a back reverse scan signal of any of the driving modules higher than or equal to (n+2)th stage for charging or discharging the control node of the output unit. When the forward input unit is charging the output unit, the output unit outputs a forward scan signal; when the reverse input unit is charging the output unit, the output unit outputs a reverse scan signal.

Bidirectional scanning driving circuit

A resistive random access memory (RRAM) device and operating method are disclosed herein. The RRAM device includes at least one RRAM cell and a control circuit. The RRAM cell includes a bottom electrode, an amorphous Indium-Gallium-Zinc-Oxide (a-IGZO) layer, a Ti layer and a top electrode. The a-IGZO layer is disposed on the bottom layer. The Ti layer is disposed on the a-IGZO layer. The top electrode is disposed on the Ti layer. The control circuit is configured to provide at least one electrical signal to the RRAM cell, so as to change the resistance value of the RRAM cell.

Resistive random access memory device and operating method thereof

Growing community of inventors

Hsinchu, Taiwan

Po-Tsun Liu