Epistar Corporation

Po-Shun Chiu

De-Shan Kuo

Chun-Hsiang Tu

Ting-Chia Ko

Tsun-Kai Ko

Hsin-Ying Wang

Chien-Kai Chung

Hui-Chun Yeh

Yu-Ting Huang

Ying-Chieh Chen

Chun-Teng Ko

Jhih-Jheng Yang

Jiun-Ru Huang

Jian-Huei Li

Zi-Jin Lin

Chien-Fu Shen

Chia-Liang Hsu

Chen Ou

Tsung-Hsun Chiang

Min-Yen Tsai

Tzung-Shiun Yeh

Liang-Sheng Chi

Jing Jiang

Jie Chen

Min-Hsun Hsieh

Chi-Shiang Hsu

Juin-Yang Chen

A light-emitting device, includes a substrate, including an upper surface; a first light emitting unit and a second light emitting unit, formed on the upper surface, wherein each of the first light emitting unit and the second light emitting unit includes a lower semiconductor portion and an upper semiconductor portion; and a conductive structure electrically connecting the first light emitting unit and the second light emitting unit; wherein the lower semiconductor portion of the first light emitting unit includes a first sidewall and a first upper surface; and wherein the first side wall includes a first sub-side wall and a second sub-side wall, an obtuse angle is formed between the first sub-side wall and the first upper surface and another obtuse angle is formed between the second sub-side wall and the upper surface.

Light-emitting device and manufacturing method thereof

A light-emitting device, comprising: a substrate; a semiconductor stacking layer comprising a first type semiconductor layer on the substrate, an active layer on the first semiconductor layer, and a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises a bonding layer, a conductive layer, and a first barrier layer between the bonding layer and the conductive layer; wherein the conductive layer has higher standard oxidation potential than that of the bonding layer.

Electrode structure of light emitting device

A method of manufacturing a light-emitting device is disclosed. The method includes providing a light-emitting diode wafer, including a substrate and a semiconductor stack on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser on the light-emitting diode wafer and irradiating the light-emitting diode wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing an etching process; providing and focusing a second laser on an interior of the substrate to form one or a plurality of textured areas in the substrate; and providing force on the light-emitting diode wafer to separate the light-emitting diode wafer into a plurality of light-emitting diode chips along the plurality of scribing lines.

Manufacturing method of light-emitting device

Light emitting device

A light-emitting device includes: a rectangular shape with a first side, a second side opposite to the first side, and a third side connecting the first side and the second side; a light-emitting stack, comprising a lower semiconductor layer, an upper semiconductor layer, and an active layer between the lower semiconductor layer and the upper semiconductor layer; a first electrode formed on the lower semiconductor layer, comprising a first electrode pad and a first extension electrode; a second electrode formed on the upper semiconductor layer, comprising a second electrode pad and a second extension electrode; and a first current blocking layer formed between the lower semiconductor layer and the first electrode pad, wherein the first current blocking layer comprises a top surface and side surfaces; wherein the first electrode pad covers the top surface and the side surfaces of the first current blocking layer and contacts the lower semiconductor layer.

Light-emitting device

A manufacturing method of light-emitting device is disclosed. The method includes providing an LED wafer comprising a substrate and a semiconductor stack formed on the substrate, wherein the semiconductor stack has a lower surface facing the substrate and an upper surface opposite to the lower surface; providing a first laser to the LED wafer and irradiating the LED wafer from the upper surface to form a plurality of scribing lines on the upper surface; providing and focusing a second laser on an interior of the substrate to form a plurality of textured areas in the substrate; and providing force on the LED wafer to separate the LED wafer into a plurality of LED chips.

A light-emitting device includes: a rectangular shape with a 1side, a 2side opposite to the 1side, and a 3side connecting the 1and the 2sides; a first electrode pad formed adjacent to the 3side; a second electrode pad formed adjacent to the 2side; a first extension electrode, extending from the first electrode pad in a direction away from the 3side and bended toward the 2side; and a second extension electrode, including a first and a second branches respectively extending from the second electrode pad; wherein a distance between the first electrode pad and the 3side is smaller than a distance between the second electrode pad and the 3side; wherein an end portion of the first branch includes a first arc bending to the 3side and a minimum distance between the first branch and the 1side is smaller than a minimum distance between the second branch and the 1side.

A light-emitting device comprises a first semiconductor layer; an active layer on the first semiconductor layer; a second semiconductor layer on the active layer; and an electrode structure on the second semiconductor layer, wherein the electrode structure comprises an adhesion layer on the second semiconductor layer, a conductive layer on the adhesion layer, and a bonding layer on the conductive layer, and wherein the electrode structure comprises a center region and an edge region, a thickness of each layer of the edge region of the electrode structure is smaller than that of the center region.

A light-emitting device includes: a light-emitting stack including a first side, a second side opposite to the first side, a third side connecting the first side and the second side, and an upper surface between the first side and the second side; a first electrode pad formed on the upper surface; a second electrode pad formed on the upper surface, wherein the first electrode pad is closer to the first side than the second electrode pad; and a first extension electrode including a first section extended from the first electrode pad in a direction away from the third side, and a second section connecting to the first section and perpendicular to the first side; wherein a distance between the first electrode pad and the third side is smaller than a distance between the second electrode pad and the third side.

A light-emitting device is disclosed. The light-emitting diode device includes a substrate, comprising an upper surface, a lower surface and a plurality of side surfaces; and a semiconductor stack formed on the upper surface of the substrate; wherein the plurality of side surfaces comprises: a first region, adjacent to the upper surface and having a first surface roughness; a second region, comprising one or a plurality of textured areas substantially parallel to the upper surface and/or the lower surface in a side view, wherein the textured area is composed of a plurality of textured stripes and has a second surface roughness; and a third region, having a third surface roughness and being between the first region and the second region, and/or between the plurality of textured areas; wherein the first surface roughness is smaller than the second surface roughness, and the third surface roughness is smaller than the first surface roughness.

A light-emitting diode structure comprises a first semiconductor layer; a second semiconductor layer under the first semiconductor layer; a light-emitting layer between the first semiconductor layer and the second semiconductor layer for emitting a light; a first electrical pad on the first semiconductor layer for wire bonding; a first extension connecting to the first electrical pad; and a first reflective layer covering the first extension and exposing the first electrical pad, wherein the first electrical pad and the first extension have the same thickness, and the reflectivity of the first reflective layer is higher than that of the first extension.

Growing community of inventors

Hsinchu, Taiwan

Po-Shun Chiu