Taiwan Semiconductor Manufacturing Comp. Ltd.

Po Shao Lin

Wei-Yang Lee

Chia-Pin Lin

Wei-Han Fan

Tzu-Hua Chiu

Kuan-Hao Cheng

A semiconductor device and a method of forming the same are provided. In an embodiment, an exemplary semiconductor device includes a vertical stack of channel members disposed over a substrate, a gate structure wrapping around each channel member of the vertical stack of channel members, and a source/drain feature disposed over the substrate and coupled to the vertical stack of channel members. The source/drain feature is spaced apart from a sidewall of the gate structure by an air gap and a dielectric layer, and the air gap extends into the source/drain feature.

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Taipei, Taiwan

Po Shao Lin