Himax Technologies, Inc.

Po-Nan Chen

Yu-Jui Hsieh

Ya-Jing Yang

A sensor device provided in the disclosure includes a sensor substrate, a first transparent layer, a collimator layer, and a lens. The first transparent layer is disposed on the sensor substrate, wherein the first transparent layer defines an alignment structure. The collimator layer is disposed on the first transparent layer. The lens is disposed on the collimator layer.

Method of fabricating a sensor device

Sensor device and method of fabricating a sensor device

A liquid crystal display includes a first substrate, a pixel array, a first pad, a dielectric layer, a filling pattern, a first conductor, a second substrate and a liquid crystal layer. The first substrate has a display area and a pad area located outside the display area. The pixel array is disposed on the display area. The first pad is disposed on the pad area. The dielectric layer has a first opening overlapped with the first pad. The filling pattern is disposed within the first opening of the dielectric layer. The filling pattern has through holes, and the through holes of the filling pattern are overlapped with the first pads. The first conductor is disposed in the first opening of the dielectric layer, and is electrically connected to the first pad via the through holes of the filling pattern.

Liquid crystal display

A method of fabricating a sensor device including at least the following steps is provided. An optical film stack is formed on a sensor substrate, wherein the sensor substrate includes a sensor region and a pad region beside the sensor region, and the optical film stack covers the sensor region while exposes the pad region. A releasing pattern is formed on the pad region. A lens material layer is formed on the sensor substrate to cover the releasing pattern and the optical film stack. The releasing pattern is removed from the sensor substrate to expose the pad region by patterning the lens material layer to form a lens on the optical film stack.

A patterned light guide structure includes a transparent substrate with a first side and with a second side, an anti-reflective layer directly attached to the first side, a first light-shielding layer directly disposed on the anti-reflective layer, a second light-shielding layer directly disposed on the second side, and a protecting layer directly disposed on the first light-shielding layer to keep the first light-shielding layer from any deteriorating damage.

Patterned light guide structure and method to form the same

An image sensor structure includes a substrate, a first infrared filter, a second infrared filter, a planarization layer, a color filter and a third infrared filter. The substrate has a first sensing region for detecting visible light and a second sensing region neighboring the first sensing region for detecting infrared light. The first infrared filter is disposed on the first sensing region. The second infrared filter is disposed on the second sensing region and neighbors the first infrared filter. The second infrared filter defines one or more openings for penetrating incident light. The planarization layer is over the first infrared filter and the second infrared filter, and fills the one or more openings. The color filter is on the planarization layer and vertically above the first sensing region. The third infrared filter is on the planarization layer and is vertically above the second sensing region.

Image sensor structure

An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion includes an infrared cutoff filter ball layer configured to collect the visible light. In some embodiments of the present invention, the infrared receiving portion includes a micro-lens layer configured to collect the infrared. In some other embodiments of the present invention, the infrared receiving portion includes an infrared pass filter ball layer configured to collect the infrared.

Image sensor

An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The visible light receiving portion includes a first white filter. The infrared receiving portion is configured to receive infrared. The infrared receiving portion includes an infrared photodiode, a second white filter, and an infrared pass filter. The second white filter is disposed on the infrared photodiode. The infrared pass filter is disposed on the infrared photodiode. The infrared is received by the infrared photodiode after passing through the second white filter and the infrared pass filter.

An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion includes a color filter ball layer configured to collect the visible light. In some embodiments of the present invention, the infrared receiving portion includes an infrared pass filter ball layer configured to collect the infrared. In some other embodiments of the present invention, the infrared receiving portion includes a white filter ball layer configured to collect the infrared.

A method for forming an image sensor includes: providing a first device including a visible light receiving portion and an infrared receiving portion; coating a first infrared cutoff filter on the first device; patterning plural photoresists on the first infrared cutoff filter located in the visible light receiving portion to form a second device; etching the second device until a first filter of the first device is exposed to form an infrared cutoff filter and an infrared cutoff filter grid located in the visible light receiving portion, in which the infrared cutoff filter grid is located on the infrared cutoff filter; filling a color filter in the infrared cutoff filter grid and forming a second filter on the first filter; and disposing a spacer layer and a micro-lens layer on the color filter and the second filter sequentially.

Method for forming image sensor

An image sensor is provided. The image sensor includes a visible light receiving portion and an infrared receiving portion. The visible light receiving portion is configured to receive a visible light. The infrared receiving portion is configured to receive infrared. The visible light receiving portion comprises an infrared cutoff filter, plural primary color filters, and plural secondary color filters. The primary color filters and the secondary color filters are disposed on the infrared cutoff filter. The infrared receiving portion comprises plural first infrared pass filters and plural second infrared pass filters disposed on the first infrared pass filters. Each of the primary color filters occupies a first area. The secondary color filters and the second infrared pass filters occupy a second area substantially equal to the first area.

A method of fabricating an image sensor includes the following steps. A substrate is provided. A first infrared filter is formed on a first region of the substrate. A second infrared filter is deposited on the substrate and the first infrared filter. The deposited second infrared filter covers the first infrared filter. The second infrared filter is lowered to expose the first infrared filter. The lowered second infrared filter is on a second region of the substrate and neighbors the first infrared filter.

Methods of fabricating an image sensor

An image sensor is provided. The image sensor includes an infrared receiving portion and a visible light receiving portion. The infrared receiving portion is configured to receive infrared. The visible light receiving portion is configured to receive a visible light. The visible light receiving portion includes an infrared cutoff filter grid configured to purify the visible light.

A method of fabricating an image sensor includes the following steps. A semiconductor substrate is provided. A first photoresist structure is formed on the semiconductor substrate. A second photoresist structure is formed on the semiconductor substrate and covering the first photoresist structure. A third photoresist structure is formed on the semiconductor substrate and covering the first photoresist structure and the second photoresist structure. A first etching back process is performed to remove a first portion of the third photoresist structure above a top surface of the second photoresist structure. A second etching back process is performed to remove a portion of the second photoresist structure above a top surface of the first photoresist structure and to remove a second portion of the third photoresist structure above the top surface of the first photoresist structure.

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Tainan, Taiwan

Po-Nan Chen