United Microelectronics Corp.

Ability Opto-electronics Technology Co., Ltd.

Po-Jui Liao

Jie-Ning Yang

Chien-Ting Lin

Shao-Hua Hsu

Tsung-Lung Tsai

Chun-Hsien Lin

Chan-Lon Yang

Jiunn-Hsiung Liao

Hung-Wen Lee

Guang-Yaw Hwang

Yao-Chang Wang

Chi-Sheng Tseng

Hung-Ling Shih

Yeong-Ming Chang

Kuo-Yu Liao

Shin-Chi Chen

Chia-Wen Liang

Yeng-Peng Wang

Kuang-Hung Huang

Teng-Chun Tsai

Zhi-Cheng Lee

Che-Hua Hsu

Yi-Wen Chen

Po-Cheng Huang

Cheng-Guo Chen

Chun-Mao Chiou

Ti-Bin Chen

Yao Wei Liu

Shyan-Liang Chou

Jung-Tsung Tseng

Tsung-Min Kuo

Shih-Chang Chang

Ying Jung Chen

Bo Guang Jhang

Yao-Wei Liu

Chien-Hsun Lai

Nai-Yuan Tang

Yi-Wei Chen

Chun-Yuan Wu

Chia-Lin Hsu

Sheng-Yuan Hsueh

Hsin-Fu Huang

Wen-Han Hung

Chien-Ming Lai

Shih-Chieh Hsu

Shui-Yen Lu

Pei-Yu Chou

Min-Chuan Tsai

Chih-Kai Kang

Chen-Hua Tsai

Ching-I Li

Chia-Chen Sun

Po-Kuang Hsieh

Chi-Horn Pai

Cheng-Tzung Tsai

Ying-Tsung Chen

Tong-Jyun Huang

Shang-Yuan Tsai

Tzung-Ying Lee

Chen-Hung Tsai

Hung-Kuo Yu

Cheng-Yu Ma

Chao-Hsiang Yang

Shu-Hsuan Chih

Tzu-Feng Kuo

An optical operating module including a light-emitting element, a light guide element, a display panel, and a control element is provided. The light-emitting element includes a first light-exit surface, an electrical connector and a light-emitting unit. The light guide includes a first light-receiving surface, a reflective surface, a first reflective surface, and a second light-emitting surface. The display panel is partially disposed on the light guide, and the other part of the display panel not disposed on the light guide forms an accommodating space with the light guide element, and includes a second light-receiving surface and a third light-exit surface. The control element is disposed in the accommodating space, and generates a control signal to control the light-emitting element after receiving a command of an action. The optical operating module provides abundant light and controls the controlled terminal after the fingerprint identification device recognizes fingerprints.

Optical operation module with fingerprint identification device and operating method thereof

A four-piece optical lens for capturing image and a four-piece optical module for capturing image are provided. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with refractive power; a second lens with refractive power; a third lens with refractive power; and a fourth lens with positive refractive power; and at least one of the image-side surface and object-side surface of each of the four lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.

Optical image capturing system

A five-piece optical lens for capturing image and a five-piece optical module for capturing image, along the optical axis in order from an object side to an image side, include a first lens with positive refractive power having a convex object-side surface; a second lens with refractive power; a third lens with refractive power; a fourth lens with refractive power; and a fifth lens with negative refractive power; and at least one of the image-side surface and object-side surface of each of the five lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.

A two-piece optical lens for capturing image and a two-piece optical module for capturing image are provided. In order from an object side to an image side, the optical lens along the optical axis includes a first lens with positive refractive power; and a second lens with refractive power; and at least one of the image-side surface and object-side surface of each of the two lens elements are aspheric. The optical lens can increase aperture value and improve the imagining quality for use in compact cameras.

A method of manufacturing a metal gate is provided. The method includes providing a substrate. Then, a gate dielectric layer is formed on the substrate. A multi-layered stack structure having a work function metal layer is formed on the gate dielectric layer. An Oambience treatment is performed on at least one layer of the multi-layered stack structure. A conductive layer is formed on the multi-layered stack structure.

Oxygen treatment of replacement work-function metals in CMOS transistor gates

A semiconductor process includes the following step. A stacked structure is formed on a substrate. A contact etch stop layer is formed to cover the stacked structure and the substrate. A material layer is formed on the substrate and exposes a top part of the contact etch stop layer covering the stacked structure. The top part is redressed.

Semiconductor process

The present invention provides a structure of a resistor comprising: a substrate having an interfacial layer thereon; a resistor trench formed in the interfacial layer; at least a work function metal layer covering the surface of the resistor trench; at least two metal bulks located at two ends of the resistor trench and adjacent to the work function metal layer; and a filler formed between the two metal bulks inside the resistor trench, wherein the metal bulks are direct in contact with the filler.

Resistor and fabrication method thereof

An imaging lens assembly includes first, second and third optical lenses that are arranged sequentially from an object side to an image side along an optical axis, and a constant-aperture diaphragm disposed between the second optical lens and the object side. Each of the first and second optical lenses has a positive refractive power near the optical axis. The third optical lens has a negative refractive power near the optical axis and has an object-side surface and an image-side surface, at least one of which has at least an inflection point. The imaging lens assembly satisfies: 0.55&#x3c;f/Dg&#x3c;0.85, in which, f is a focal length of the imaging lens assembly, and Dg is a length of a diagonal line of a maximum viewing angle in an imaging plane.

Imaging lens assembly

A method of manufacturing a semiconductor device having metal gate includes providing a substrate having a first transistor and a second transistor formed thereon, the first transistor having a first gate trench formed therein, forming a first work function metal layer in the first gate trench, forming a sacrificial masking layer in the first gate trench, removing a portion of the sacrificial masking layer to expose a portion of the first work function metal layer, removing the exposed first function metal layer to form a U-shaped work function metal layer in the first gate trench, and removing the sacrificial masking layer. The first transistor includes a first conductivity type and the second transistor includes a second conductivity type. The first conductivity type and the second conductivity type are complementary.

Semiconductor device having metal gate and manufacturing method thereof

A semiconductor device having a metal gate includes a substrate having a first gate trench and a second gate trench formed thereon, a gate dielectric layer respectively formed in the first gate trench and the second gate trench, a first work function metal layer formed on the gate dielectric layer in the first gate trench and the second gate trench, a second work function metal layer respectively formed in the first gate trench and the second gate trench, and a filling metal layer formed on the second work function metal layer. An opening width of the second gate trench is larger than an opening width of the first gate trench. An upper area of the second work function metal layer in the first gate trench is wider than a lower area of the second work function metal layer in the first gate trench.

The present invention provides a method of manufacturing semiconductor device having metal gates. First, a substrate is provided. A first conductive type transistor having a first sacrifice gate and a second conductive type transistor having a second sacrifice gate are disposed on the substrate. The first sacrifice gate is removed to form a first trench. Then, a first metal layer is formed in the first trench. The second sacrifice gate is removed to form a second trench. Next, a second metal layer is formed in the first trench and the second trench. Lastly, a third metal layer is formed on the second metal layer wherein the third metal layer is filled into the first trench and the second trench.

Method of manufacturing semiconductor device having metal gates

A metal gate process includes the following steps. An isolating layer on a substrate is provided, where the isolating layer has a first recess and a second recess. A first metal layer covering the first recess and the second recess is formed. A material is filled in the first recess but exposing a top part of the first recess. The first metal layer in the top part of the first recess and in the second recess is simultaneously removed. The material is removed. A second metal layer and a metal gate layer in the first recess and the second recess are sequentially filled.

Metal gate process

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Taichung, Taiwan

Po-Jui Liao