Taiwan Semiconductor Manufacturing Comp. Ltd.

Industrial Technology Research Institute

Altek Biotechnology Corporation

Po-Ju Chen

Yi-Wei Chiu

Chih-Teng Liao

Yih-Her Chang

Guang-Way Jang

Sung-Jeng Jong

Jer-Young Chen

Cheng-Jyun Huang

Shu-Chen Li

Ren-Kuen Chang

Chin-Shang Hsu

Chei Kao

Chih-Hao Chen

Wen-Yen Chen

Cha-Hsin Chao

Hsin-Yi Tsai

Jiann-Horng Lin

Chao-Yu Chou

Chih-Ching Cheng

Xiao-Meng Chen

Cheng-Po Kuo

Lin-Ting Lin

Fang-Yi Wu

Ting-Cheng Ke

Sheng-Jen Cheng

Zheng-En Bao

Pei-En Lee

A recovery layer (e.g., a layer of organic and/or tin-based material) is formed within recesses, in which adjacent MEOL or BEOL structures are formed, after plasma ashing and before a trimming process. The recovery layer preserves hardmask material and dielectric material such that upper surfaces of the adjacent MEOL or BEOL structures remain physically separated. As a result, the adjacent MEOL or BEOL remain electrically isolated and functional.

Semiconductor structure formation

The present disclosure provides a method and a system therefore for processing wafer. The method includes: monitoring a distribution of particles in a chamber while processing the wafer; determining at least one parameter according to the distribution of the particles for configuring at least one device of the chamber; configuring the at least one device of the chamber according to the at least one parameter; and processing another wafer based on a recipe after configuring the at least one device of the chamber.

Method and system for processing wafer

An image capturing module includes a flexible circuit board and an image sensor. The flexible circuit board includes a plurality of first pads and a plurality of second pads. The first pads are disposed on a first surface of the flexible circuit board and the second pads are disposed on a second surface of the flexible circuit board, wherein the first surface is opposite to the second surface. The image sensor is disposed on the first surface. A distance between the image sensor and the first pads is identical to a distance between the image sensor and the second pads. The flexible circuit board is folded to align and weld the first pads with the second pads, such that a light receiving surface of the image sensor is perpendicular to surfaces of the first and second pads.

Image capturing module, endoscope and method of manufacturing image capturing module

A polyphenylene ether oligomer and a polyphenylene ether oligomer are provided. The polyphenylene ether oligomer has a structure represented by Formula (I):  wherein each Rcan be independently hydrogen, Calkyl group, or phenyl group; each Rcan be independently hydrogen, Calkyl group, or phenyl group; a:(a+b) is from 0.05:1 to 1:1; n:(a+b) is from 0.05:1 to 5:1; Q can be m can be 0 or an integer from 1 to 4; Ra can be Calkylene group; Rb can be Calkylene group; each X is independently hydrogen, acryloyl group, allyl group, vinylbenzyl group, epoxypropyl group, methacryloyl group, propargyl group, or cyanol group; and wherein the polyphenylene ether oligomer can have a number average molecular weight from 400 to 2,000.

Polyphenylene ether oligomer and high-frequency copper clad laminate

A polyester is copolymerized with diacid monomer, esterified diacid monomer or a combination thereof with a polyol monomer. The diacid monomer, the esterified diacid monomer or the combination thereof includes (1) furan dicarboxylic acid, dialkyl furandicarboxylate, or a combination thereof or (2) furan dicarboxylic acid, dialkyl furandicarboxylate, or a combination thereof and spiro-diacid. The polyol monomer includes (3) C-Cpolyol or (4) C-Cpolyol and spiro-diol of Formula (I): and the spiro-diacid of Formula (II): The diacid monomer, esterified diacid monomer or combination thereof and polyol monomer meet: (a) The diacid monomer, the esterified diacid monomer or combination thereof includes (2) furan dicarboxylic acid, dialkyl furandicarboxylate, or the combination thereof and spiro-diacid or (b) The polyol monomer includes (4) C-Cpolyol and spiro-diol, and an amount of spiro-diol or spriro-diacid is 500 ppm to 2000 ppm based on a weight of furan dicarboxylic acid, dialkyl furandicarboxylate, or combination thereof.

Polyester and method of manufacturing the same

A fiber includes polyester copolymerized with diacid monomer, esterified diacid monomer or combination thereof with a polyol monomer. The diacid monomer, esterified diacid monomer or combination thereof includes (1) furan dicarboxylic acid, dialkyl furandicarboxylate, or combination thereof or (2) furan dicarboxylic acid, dialkyl furandicarboxylate, or combination thereof and spiro-diacid. The polyol monomer includes (3) C-Cpolyol or (4) C-Cpolyol and spiro-diol. The diacid monomer, esterified diacid monomer or combination thereof and the polyol monomer meet: (a) diacid monomer, esterified diacid monomer or combination thereof includes (2) furan dicarboxylic acid, dialkyl furandicarboxylate, or combination thereof and spiro-diacid, (b) polyol monomer includes (4) C-Cpolyol and spiro-diol, or (c) a combination thereof. The polyester has a viscosity at 30&#xb0; C. of 0.5 dL/g to 1.5 dL/g, and an amount of spiro-diol or spriro-diacid is 500 ppm to 2000 ppm based on a weight of the furan dicarboxylic acid, dialkyl furandicarboxylate, or the combination thereof.

Fiber and method of manufacturing the same

Formation methods of a semiconductor device structure are provided. The method includes forming a bottom layer, a middle layer and an upper layer over a substrate, developing the upper layer to form an upper pattern with a first opening exposing the middle layer and a sidewall of the upper pattern. The upper pattern has a top surface. The method further includes conformally forming a protective layer over the upper pattern and the exposed middle layer, anisotropically etching the protective layer to leave a portion of the protective layer over the sidewall of the upper pattern and expose the middle layer, etching the middle layer not covered by the upper pattern and the portion of the protective layer to form a middle pattern with a second opening exposing the bottom layer, and etching the bottom layer though the second opening of the middle pattern.

Formation method of semiconductor device structure using multilayer resist layer

A method for forming a semiconductor device structure is provided. The method includes forming a mandrel masking structure over a target layer. The method also includes patterning the mandrel masking structure to form mandrel lines parallel to each other, and forming spacer structures on sidewalls of the respective mandrel lines to define first openings. Each of the spacer structures includes a first spacer and a second spacer between the first spacer and the corresponding mandrel line. The method also includes removing the mandrel lines to define second openings, and etching the target layer through the first and second openings to form a target pattern therein.

Method for forming semiconductor device structure using double patterning

A plasma-processing apparatus is provided. The plasma-processing apparatus includes a processing chamber having an upper portion and a lower portion. The upper portion has a gas inlet. The plasma-processing apparatus includes an upper electrode plate disposed in the upper portion. The upper electrode plate has gas holes passing through the upper electrode plate. The plasma-processing apparatus includes a protective layer disposed over inner walls of the gas holes. The protective layer and the upper electrode plate have different materials. The plasma-processing apparatus includes a lower electrode pedestal disposed in the lower portion for supporting a substrate.

Plasma-processing apparatus with upper electrode plate and method for performing plasma treatment process

A fire-resistant polyurethane foam is provided. A hydroxyl-containing inorganic fire retardant is premixed with a polyisocyanate and a polyol, respectively, to form two premixtures. Then, the two premixtures are mixed for reaction to form a fire-resistant polyurethane foam. Preferably, a combination of different particle sizes of the fire retardant is employed to maximize the amount of the fire retardant and increase the fire resistance of the foam.

Fire-resistant polyurethane foam

Fire-resistant polyurethane foam and fabrication method thereof

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Hsinchu, Taiwan

Po-Ju Chen