Lextar Electronics Corporation

Po-Hung Tsou

Tzu-Hung Chou

Bo-Yu Chen

A light emitting diode structure is provided. The light emitting diode structure includes a substrate, a light emitting multi-layer structure, a first current blocking layer, a first current spreading layer, a second current blocking layer and a second current spreading layer. The light emitting multi-layer structure is formed on the substrate by way of stacking. The first current blocking layer is formed on part of the light emitting multi-layer structure. The first current spreading layer covers the first current blocking layer and the light emitting multi-layer structure. The second current blocking layer is formed on part of the first current spreading layer. An orthogonal projection of the second current blocking layer is disposed in an orthogonal projection of the first current blocking layer. The second current spreading layer covers the second current blocking layer and the first current spreading layer.

Light emitting diode structure

A light-emitting diode is provided. The light-emitting diode includes an N-type semiconductor layer, a light-emitting layer and a P-type semiconductor layer. A P-type electrode includes a body part and an extension part, wherein the body part is disposed on a corner of an upper surface of the P-type semiconductor layer and the extension part extends from the body part onto the N-type semiconductor layer along a sidewall of the P-type semiconductor layer adjacent to the N-type semiconductor layer. An N-type electrode is disposed on the N-type semiconductor layer. Moreover, a current blocking layer is disposed under the P-type electrode. A transparent conductive layer is disposed on a partial upper surface of the P-type semiconductor layer.

Light-emitting diodes

The disclosure provides a light-emitting diode (LED) and a method for manufacturing the same. The LED includes a first semiconductor layer, a light-emitting layer, a second semiconductor layer, a first current spreading layer, a current blocking having a plurality of nitrogen vacancies, and a second current spreading layer, wherein the second spreading layer includes a current spreading area and a current blocking area. The current blocking area is formed the nitrogen vacancies by high power sputtering on the current blocking area of the second semiconductor layer, so as to increase the resistance of the current blocking area and occur the efficiency of current blocking.

Growing community of inventors

Taipei, Taiwan

Po-Hung Tsou