National Sun Yat-sen University of Kaohsiung

Po-Hsun Chen

Ting-Chang Chang

Chih-Hung Pan

Kuan-Chang Chang

Tsung-Ming Tsai

Wen-Chung Chen

Yu-Ching Tsao

Yu-Lin Tsai

Yu-Shan Lin

A structure to increase the breakdown voltage of the high electron mobility transistor is provided to solve the problem of function loss under a high voltage state. The structure includes a substrate, a conducting layer located on the substrate, a gate insulating layer and an electric-field-dispersion layer. The upper portion of the conducting layer is an electron supply layer, and the lower portion of the conducting layer is an electron tunnel layer. The gate insulating layer is laminated on the electron supply layer. The electric-field-dispersion layer is laminated on the gate insulating layer. The dielectric constant of the electric-field-dispersion layer is smaller than that of the gate insulating layer. A gate electrode is located between the electric-field-dispersion layer and the gate insulating layer. A source and a drain electrodes are respectively electrically connected to the electric-field-dispersion layer, the gate insulating layer, the electron supply layer, and the electron tunnel layer.

Structure to increase breakdown voltage of high electron mobility transistor

A resistive random access memory overcomes the low reliability of the conventional resistive random access memory. The resistive random access memory includes a resistance changing layer and two electrode layers. The two electrode layers are coupled with the resistance changing layer. Each of the two electrode layers includes a doping area containing a heavy element. In such an arrangement, the above deficiency can be overcome.

Resistive random access memory

Growing community of inventors

Kaohsiung, Taiwan

Po-Hsun Chen