Taiwan Semiconductor Manufacturing Comp. Ltd.

Labeltek Inc.

Taiwan Salt Industrial Corporation

Po-Han Huang

Jiech-Fun Lu

Yu-Lung Yeh

Ming-Chi Wu

Chien Nan Tu

Chi-Yuan Wen

Yu-Chun Chen

Hsin-Yi Kuo

Shih-Pei Chou

Hung-Wen Hsu

Wei-Li Huang

Shyue-Ming Jang

Tzu-Hsiang Chen

Ling Lu

Chyuan Juang

Bang-I Liou

Kuan-Chieh Tseng

Chun-Liang Lai

Chia-Hung Yeh

Charng-Lih Jeng

Yuan-Szu Chang

In some embodiments, the present disclosure relates to an integrated chip having an inter-layer dielectric (ILD) structure along a first surface of a substrate having a photodetector. An etch stop layer is over the ILD structure, and a reflector is surrounded by the etch stop layer and the ILD structure. The reflector has a curved surface facing the substrate at a location directly over the photodetector. The curved surface is coupled between a first sidewall and a second sidewall of the reflector. The reflector has larger thicknesses along the first sidewall and the second sidewall than at a center of the reflector between the first sidewall and the second sidewall.

Concave reflector for complementary metal oxide semiconductor image sensor (CIS)

The present disclosure relates to, in part, an inductor structure that includes an etch stop layer arranged over an interconnect structure overlying a substrate. A magnetic structure includes a plurality of stacked layers is arranged over the etch stop layer. The magnetic structure includes a bottommost layer that is wider than a topmost layer. A first conductive wire and a second conductive wire extend in parallel over the magnetic structure. The magnetic structure is configured to modify magnetic fields generated by the first and second conductive wires. A pattern enhancement layer is arranged between the bottommost layer of the magnetic structure and the etch stop layer. The pattern enhancement layer has a first thickness, and the bottommost layer of the magnetic structure has a second thickness that is less than the first thickness.

Integrated chip inductor structure

The present disclosure relates to an integrated chip that has a light sensing element arranged within a substrate. An absorption enhancement structure is arranged along a back-side of the substrate, and an interconnect structure is arranged along a front-side of the substrate. A reflection structure includes a dielectric structure and a plurality of semiconductor pillars that matingly engage the dielectric structure. The dielectric structure and semiconductor pillars are arranged along the front-side of the substrate and are spaced between the light sensing element and the interconnect structure. The plurality of semiconductor pillars and the dielectric structure are collectively configured to reflect incident light that has passed through the absorption enhancement structure and through the light sensing element back towards the light sensing element before the incident light strikes the interconnect structure.

QE approach by double-side, multi absorption structure

An optical isolation structure and a method for fabricating the same are provided. The optical isolation structure includes an epitaxial layer and a dielectric layer. The epitaxial layer and the dielectric layer are formed in a deep trench of a semiconductor substrate. The epitaxial layer covers a lower portion of sidewall of the trench, and the dielectric layer covers an upper portion of the sidewall of the trench. In the method for fabricating the optical isolation structure, at first, shallow trenches are formed in the semiconductor substrate. Then, the dielectric layer is formed in the shallow trenches. Thereafter, deep trenches are formed passing through the dielectric layers. Then, the epitaxial layer is formed in the deep trenches.

Optical isolation structure for reducing crosstalk between pixels and fabrication method thereof

A method for preparing three types of benzidine compounds in a specific ratio, the method uses two types of diphenylamine compounds and one type of biphenyldihalide compound in a specific ratio as reactants to mix with an organic solvent and an additive to synthesize benzidine compounds in one step. The synthesized three types of benzidine compounds specially perform in a designated mixturing ratio having excellent photoelectric characteristics for a charge transporting layer in an organic photo-conductive drum.

Method for preparing three types of benzidine compounds in a specific ratio

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Tainan, Taiwan

Po-Han Huang