Apple Inc.

Visiony Corporation

Po-Chun Yeh

Shih Chang Chang

Jung Yen Huang

Jiun-Jye Chang

Ching-Sang Chuang

Ting-Kuo Chang

Shinya Ono

Lei Yuan

Doh-Hyoung Lee

Niva A Ran

Chuan-Jung Lin

Themistoklis Afentakis

Caleb Coburn

Chin-Wei Lin

Chieh-Wei Chen

Hirokazu Yamagata

Chia-Yu Chen

Gihoon Choo

Zino Lee

Gwanwoo Park

Yu-Wen Liu

Akira Matsudaira

Chih Pang Chang

Jehun Lee

Kenny Kim

Xingfeng He

Yung Fong Kao

Yu-Cheng Lin

Shih Lun Huang

Dawei Liu

Yinsheng Guo

Cheng Min Hu

Chih-Hung Yu

An organic light-emitting diode (OLED) display may have an array of organic light-emitting diode pixels that each have OLED layers interposed between a cathode and an anode. Voltage may be applied to the anode of each pixel to control the magnitude of emitted light. The conductivity of the OLED layers may allow leakage current to pass between neighboring anodes in the display. To reduce leakage current and the accompanying cross-talk, the display may include active and/or passive leakage-mitigating structures. The passive leakage-mitigating structures may have an undercut that causes discontinuities in the overlying OLED layers. Active leakage-mitigating structures may include a conductive layer (e.g., a conductive ring) that drains leakage current to ground. Alternatively, the active leakage-mitigating structures may include a gate electrode modulator with a variable voltage that stops the current flow laterally.

Organic light-emitting diode display with passive leakage-reducing structures

A display may include an array of pixels. Each pixel in the array includes an organic light-emitting diode coupled to associated semiconducting oxide transistors. The semiconducting oxide transistors may exhibit different device characteristics. Some of the semiconducting oxide transistors may be formed using a first oxide layer formed from a first semiconducting oxide material using first processing steps, whereas other semiconducting oxide transistors are formed using a second oxide layer formed from a second semiconducting oxide material using second processing steps different than the first processing steps. The display may include three or more different semiconducting oxide layers formed during different processing steps.

Display circuitry with semiconducting oxide transistors

Organic light-emitting diode display with active leakage-reducing structures

Display panels with hydrogen trap layers are described. The hydrogen trap layers may be incorporated into a variety of locations to getter or block hydrogen diffusion into the semiconductor oxide layer of an oxide transistor.

Hydrogen trap layer for display device and the same

A dual image capture assembly for acquiring and transmitting images from a binocular scope for three-dimensional (3D) viewing on a user computing device. The dual image capture assembly includes a pair of eyepiece adaptors each configured to attach on the pair of eyepieces of a binocular scope, and a dual-camera apparatus including a pair of image capture devices respectively coupled with the pair of eyepiece adaptors. The dual-camera apparatus also includes a linker connecting the first and second camera components.

Apparatus and method for dual image acquisition

Growing community of inventors

Cupertino, CA, United States of America

Po-Chun Yeh