Nan Ya Technology Corporation

Po-Chun Lin

Chin-Lung Chu

The present disclosure is directed to a method for preparing a semiconductor apparatus having a plurality of bonded semiconductor devices formed by a fusion bonding technique and a method for preparing the same. The method includes the steps of forming a first semiconductor device having a first conductive portion, a first dielectric portion adjacent to the first conductive portion, and a depression at an upper surface of the first conductive portion; forming a second semiconductor device having a second conductive portion and a second dielectric portion adjacent to the second conductive portion; disposing the first semiconductor device and the second semiconductor device in a manner such that the first conductive portion faces the second conductive portion; and expanding at least one of the first conductive portion and the second conductive portion to fill the depression.

Semiconductor apparatus and method for preparing the same

The present disclosure is directed to method for preparing a semiconductor apparatus having a plurality of bonded semiconductor devices formed by a fusion bonding technique. The method includes operations of forming a first semiconductor device having a first conductive portion, a first dielectric portion adjacent to the first conductive portion, and a depression at an upper surface of the first conductive portion; forming a second semiconductor device having a second conductive portion and a second dielectric portion adjacent to the second conductive portion; disposing the first semiconductor device and the second semiconductor device in a manner such that the first conductive portion faces the second conductive portion; and expanding at least one of the first conductive portion and the second conductive portion to fill the depression.

Method for preparing a semiconductor apparatus

A semiconductor structure is provided. The semiconductor structure includes a semiconductor substrate and a first conductive bump. The semiconductor substrate has an integrated circuit and an interconnection metal layer, and a tilt surface is formed on an edge of the semiconductor substrate. The first conductive bump is electrically connected to the integrated circuit via the interconnection metal layer, and is disposed on the tilt surface, wherein a profile of the first conductive bump extends beyond a side surface of the edge of the semiconductor layer.

Semiconductor method for forming semiconductor structure having bump on tilting upper corner surface

A package structure includes an interconnection layer; a passivation layer disposed on the interconnection layer, in which the interconnection layer and the passivation layer defined at least one opening; at least one elastic bump disposed on the interconnection layer, in which a portion of the elastic bump is embedded in the opening; and a conductive layer disposed on the elastic bump.

Method for manufacturing package structure having elastic bump

A semiconductor structure is provided. The semiconductor structure includes a substrate, at least one semiconductor device, a through-substrate via (TSV), and a shield structure. The substrate has a front side surface and a back side surface. The semiconductor device is disposed on the front side surface. The TSV is disposed in the substrate. The TSV is exposed by the front side surface and the back side surface, and the TSV is electrically connected to the semiconductor device. The shield structure is disposed in the substrate and surrounds the TSV. The shield structure is exposed by the front side surface, the shield structure is electrically isolated from the TSV, and the shield structure and the TSV have bottom ends at the same height.

Semiconductor structure

The present disclosure provides a method for preparing a semiconductor package. The method includes providing a first device having a first upper surface and a first side, wherein the first upper surface and the first side form a first corner. The method also includes forming a bump structure over the first upper surface, wherein the bump structure extends laterally across the first side of the first device.

Method for preparing a semiconductor package

A manufacturing method of a combing bump structure is disclosed. In the manufacturing method, a semiconductor substrate is provided, a pad is formed on the semiconductor substrate, a conductive layer is formed on the pad, a solder bump is formed on the conductive layer, and at least two metal side walls are formed disposed along opposing laterals of the solder bump respectively.

Combing bump structure and manufacturing method thereof

A stacked semiconductor structure is provided. The stacked semiconductor structure includes a substrate, a first electronic component, a first fillet, and a first redistribution layer. The substrate has a support surface. The substrate includes a first pad disposed on the support surface. The first electronic component is disposed on the support surface and has a first bottom surface, a first top surface, and a first side surface connecting the first bottom surface and the first top surface. The first electronic component includes a second pad disposed on the first top surface. The first fillet is disposed on the support surface and the first side surface and has a first inclined surface. The first redistribution layer is disposed on the support surface, the first top surface, and the first inclined surface and electrically connecting the first pad to the second pad.

Stacked semiconductor structure

A stacked package structure includes a first package structure having a first surface and a second surface opposite to the first surface. The first package structure includes a least one first die having a first active region disposed at a bottom of the first die; a first redistribution layer disposed on the top surface of the first die; and a plurality of first bumps disposed on the bottom surface of the first active region.

Stacked package structure and manufacturing method thereof

Semiconductor structure having bump on tilting upper corner surface

Package structure and manufacturing method thereof

The present disclosure provides a method for preparing a semiconductor apparatus. The semiconductor apparatus includes a first semiconductor die and a second semiconductor die stacked onto the first semiconductor die in a horizontally shifted manner. The first semiconductor die includes a first chip selection terminal and a first lower terminal electrically connected to the first chip selection terminal. The second semiconductor die includes a second chip selection terminal electrically connected to a first upper terminal of the first semiconductor die via a second lower terminal of the second semiconductor die. The first upper terminal which is electrically connected to the second chip selection terminal is not electrically connected to the first lower terminal which is electrically connected to the first chip selection terminal.

A semiconductor package includes a first device and a bump structure disposed over the first device. In some embodiments, the first device has a first upper surface and a first side, wherein the first upper surface and the first side form a first corner of the first device. In some embodiments, the bump structure is disposed over the first upper surface and extends laterally across the first side of the first device. The lateral extension of the bump structure across the first side of the semiconductor device can contact a corresponding conductor of a laterally adjacent device to implement a lateral signal path between the semiconductor device and the laterally adjacent device in the absence of a redistribution structure corresponding to the redistribution layer.

Semiconductor package and method for preparing the same

A semiconductor structure is provided. The semiconductor structure includes a substrate, at least one semiconductor device, a through-substrate via (TSV), and a shield structure. The substrate has a front side surface and a back side surface. The semiconductor device is disposed on the front side surface. The TSV is disposed in the substrate. The TSV is exposed by the front side surface and the back side surface, and the TSV is electrically connected to the semiconductor device. The shield structure is disposed in the substrate and surrounds the TSV. The shield structure is exposed by the front side surface, the shield structure is electrically isolated from the TSV, and the shield structure is used to be electrically connected to a power terminal or a ground terminal.

An electronic structure is provided. The electronic structure includes a first board structure, a first contact pad, a first joint member, and a second joint member. The first contact pad is disposed on the first board structure. The first joint member is disposed on the first contact pad, in which the first joint member has a first Young's modulus. The second joint member is disposed on the first joint member, in which the second Young's modulus has a second Young's modulus, and the second Young's modulus is greater than the first Young's modulus.

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Changhua County, Taiwan

Po-Chun Lin