United Microelectronics Corp.

Po-Ching Su

Chin-Lung Lin

Chih-Chiang Wu

YI-Fan Li

Ti-Bin Chen

Tzu-Chin Wu

Hung-Wei Lin

Min-Hua Tsai

Kuan-Wen Fang

Sheng-Lung Teng

Lun-Wen Yeh

Yen-Hung Chen

Yu-Fu Wang

A method for fabricating a semiconductor device includes the steps of forming a metal gate on a substrate, a spacer around the metal gate, and a first interlayer dielectric (ILD) layer around the spacer, performing a plasma treatment process to transform the spacer into a first bottom portion and a first top portion, performing a cleaning process to remove the first top portion, and forming a second ILD layer on the metal gate and the first ILD layer.

Semiconductor device and method for fabricating the same

An optical proximity correction (OPC) process is provided. The method comprising receiving a first pattern corresponding to a first structure of a semiconductor structure, and a second pattern corresponding to a second structure of said semiconductor structure. Next, a first OPC process is performed for the first pattern to obtain a revised first pattern, wherein the revised first pattern has a first shift regarding to the first pattern. A second OPC process is performed for the second pattern to obtain a revised second pattern, wherein the second OPC process comprises moving the second pattern according to the first shift.

Optical proximity correction method

Growing community of inventors

Tainan, Taiwan

Po-Ching Su